STEVEN RANDY BOWMAN
Pilots at Shr Dr, Edgewater, MD
License number
Maryland A4043598
Issued Date
Jan 2016
Expiration Date
Jan 2018
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
3939 W Shore Dr, Edgewater, MD 21037
Professional information
Novel Method For The Bottom-Seeded Growth Of Potassium Lead Chloride Crystals From Polycrystalline Seeds
US Patent:
2011016, Jul 14, 2011
Filed:
Mar 17, 2011
Appl. No.:
13/049962
Inventors:
NICHOLAS J. CONDON - Greenbelt MD, US
Steven R. Bowman - Edgewater MD, US
Shawn P. O'Connor - Dunkirk VA, US
Steven R. Bowman - Edgewater MD, US
Shawn P. O'Connor - Dunkirk VA, US
International Classification:
C30B 11/02
US Classification:
117 3, 117206
Abstract:
A method and apparatus for growing a single crystal KbClmaterial in a growth furnace comprising an upper zone set at 480° C. A single crystal KbClmaterial is grown from a single KbClgrain until a eutectic point is reached. The upper zone is cooled at 1°/hour to 380° C. The single crystal KbClmaterial is annealed. The single crystal KbClmaterial is cooled at 10°/hour to room temperature. Optionally, the method further includes loading an ampoule with KbClpowder, the ampoule including a plug, which includes a seeding well and an aperture. The KbClpowder is melted, thereby generating a melt. The melt is frozen to capture a polycrystalline KbClmaterial in the seeding well, thereby generating a polycrystalline KbClseed. The ampoule is loaded into the growth furnace. The polycrystalline KbClmaterial is melted except for the polycrystalline KbClseed, the polycrystalline KbClseed including the single KbClgrain. The polycrystalline KbClmaterial is grown until the single KbClgrain is isolated by the aperture.
Method And Apparatus For Growing Potassium Lead Chloride Crystals
US Patent:
7964158, Jun 21, 2011
Filed:
May 11, 2007
Appl. No.:
11/747564
Inventors:
Nicholas J. Condon - Greenbelt MD, US
Steven R. Bowman - Edgewater MD, US
Shawn P. O'Connor - Arlington VA, US
Steven R. Bowman - Edgewater MD, US
Shawn P. O'Connor - Arlington VA, US
Assignee:
The United States of America as represented by the Secretary of the Navy - Washington DC
International Classification:
B01D 9/00
US Classification:
422243, 4222451, 117200
Abstract:
A method and apparatus for growing a single crystal KPbClmaterial using a device including a plug including an axis. The plug includes a first portion defining a cylindrical hole about the axis. The plug includes a second portion defining a first conical hole about the axis. The first conical hole has a first angle. The plug includes a third portion defining a second conical hole about the axis. The second conical hole has a second angle opposite in sign relative to the first angle. The plug includes a fourth portion defining a third conical hole about the axis. The third conical hole has a third angle, the third angle having a same sign as the second angle and being greater than the second angle. The device further includes an ampoule including the plug fused therein.
Melt Stabilization And Vapor-Phase Synthesis Of Cesium Germanium Halides
US Patent:
2013011, May 16, 2013
Filed:
Nov 13, 2012
Appl. No.:
13/675890
Inventors:
Nicholas J. Condon - Silver Spring MD, US
Steven R. Bowman - Edgewater MD, US
Shawn P. O'Connor - Dunkirk VA, US
Steven R. Bowman - Edgewater MD, US
Shawn P. O'Connor - Dunkirk VA, US
International Classification:
C01D 3/04
US Classification:
25218233, 423463
Abstract:
The method described herein allows for melt stabilization and vapor-phase synthesis of a cesium germanium halide utilizing germanium dihalides formed in situ. This disclosure allows for the melting of cesium germanium halides without decomposition, which allows for growing crystals of these materials from the melt. This disclosure allows for a direct synthesis of these materials without the use of water or the introduction of other possible contaminants.
Tailored Interfaces Between Optical Materials
US Patent:
2013008, Apr 4, 2013
Filed:
Sep 28, 2012
Appl. No.:
13/629648
Inventors:
Jasbinder S. Sanghera - Ashburn VA, US
Catalin M. Florea - Washington DC, US
Leslie Brandon Shaw - Woodbridge VA, US
Lynda E. Busse - Alexandria VA, US
Ishwar D. Aggarwal - Charlotte NC, US
Steven R. Bowman - Edgewater MD, US
Catalin M. Florea - Washington DC, US
Leslie Brandon Shaw - Woodbridge VA, US
Lynda E. Busse - Alexandria VA, US
Ishwar D. Aggarwal - Charlotte NC, US
Steven R. Bowman - Edgewater MD, US
International Classification:
G02B 1/11, B23P 17/00
US Classification:
359601, 29592
Abstract:
An optical system having two or more different optical elements with a corresponding interface between the optical elements. At least one of the optical elements has an anti-reflective structure that is transferred to the interface between two optical elements, typically by embossing. Also disclosed is the related method for making the optical system.
Blue Dysprosium Laser
US Patent:
2011020, Aug 25, 2011
Filed:
Dec 9, 2010
Appl. No.:
12/964599
Inventors:
Steven R. Bowman - Edgewater MD, US
Nicholas J. Condon - Silver Spring MD, US
Shawn P. O'Connor - Dunkirk VA, US
Nicholas J. Condon - Silver Spring MD, US
Shawn P. O'Connor - Dunkirk VA, US
International Classification:
H01S 3/11, H01S 3/093
US Classification:
372 10, 372 72
Abstract:
A quasi-three level laser system having crystalline YAG or YLF doped with trivalent Dysprosium can be pumped with a laser diode in the UV, and produce a pulsed laser blue emission from the 4 F energy level at 490 nm, a red emission at 660 nm, or a yellow emission at 570 nm. The system can operate at room temperature or be cooled. The system can include Q-switching. A suitable laser diode is GaN.