MR. STEVEN BRYANT SMITH, BS, LISAC
Social Work at Los Altos Dr, Gilbert, AZ

6811936, Nov 2, 2004

Dec 31, 2002

10/334297

Steven Smith - Gilbert AZ
Sang-In Han - Phoenix AZ

Freescale Semiconductor Inc. - Austin TX

G03F 900

430 5, 428 14

A pellicle membrane structure ( ) is made by a process that includes depositing ( ) a etch mask layer ( ) on the backside of the semiconductor wafer, deposting ( ) a first pellicle membrane protection layer ( ) on a frontside of the semiconductor wafer, depositing ( ) a layer of membrane material ( ) that is preferably SiOF on the first membrane protection layer, and depositing ( ) a second pellicle membrane protection layer ( ) on the membrane material layer, forming a pattern ( ) for an opening ( ) in the semiconductor, and etching ( ) to form the opening. Oxygen plasma ( ) is then used to remove carbon from the exposed portions of the pellicle membrane protection layers, which are preferably SiCN, which in the preferable embodiment changes the exposed surfaces to SiOF, thereby forming a thin SiOF membrane ( ) over the opening.

2010006, Mar 18, 2010

Oct 20, 2006

11/584078

Shawn Thomas - Gilbert AZ, US
Steven Smith - Gilbert AZ, US
Yi Wei - Chandler AZ, US

H01L 21/3205

438 3, 438669, 257E21294, 977842

A method is provided involving the growth of carbon nanotubes to provide giant resistance anisotropy or a low-k dielectric. The method comprises growing a plurality of one-dimensional nanostructures () orthogonal to a first conductive layer (). A dielectric material () is formed covering the plurality of one-dimensional nanostructures and then etched to remove a portion of the dielectric material () to expose the ends () of the one-dimensional nanostructures (). A second conductive layer () is formed over the dielectric material () to make contact with the ends () of the one-dimensional nanostructures (). One or both of the first () and second () layers may be patterned for accessing individual or groups of the one-dimensional nanostructures (). In another exemplary embodiment, the one-dimensional nanostructures () may be removed prior to forming the second layer (), thereby creating a high-k dielectric layer () between the first and second layers ().

6992371, Jan 31, 2006

Jul 16, 2004

10/892693

David P. Mancini - Fountain Hills AZ, US
Jaime A. Quintero - Tempe AZ, US
Doug J. Resnick - Gilbert AZ, US
Steven M. Smith - Gilbert AZ, US

Freescale Semiconductor, Inc. - Austin TX

H01L 23/48, H01L 23/42, H01L 29/40

257642, 257753, 257751, 257752, 438642

A novel device, such as a semiconductor device, a microfluidic device, a surface acoustic wave device an imprint template, or the like, including an amorphous carbon layer for improved adhesion of organic layers and method of fabrication. The device includes a substrate having a surface, an amorphous carbon layer, formed overlying the surface of the substrate, and a low surface energy material layer overlying the surface of the substrate. The device is formed by providing a substrate having a surface, depositing a low surface energy material layer and an amorphous carbon layer overlying the surface of the substrate adjacent the low surface energy material layer using plasma enhanced chemical vapor deposition (PECVD) or sputtering.

2007004, Mar 1, 2007

Aug 30, 2005

11/216316

Chowdary Koripella - Scottsdale AZ, US
John D'Urso - Chandler AZ, US
Steven Smith - Gilbert AZ, US

H01M 8/24, H01M 8/14, H01M 8/10, H01M 2/08

429038000, 429046000, 429032000, 429035000

A micro fuel cell and method of forming such on a substrate () is provided that derive power from a three dimensional fuel/oxidant interchange. The fuel cell includes a plurality of porous pedestals () formed on the substrate (), each porous pedestal () including an anode (), a cathode () surrounding the anode (); and an electrolyte () filling a cavity between the anode () and the cathode (). The cathode () is accessible to ambient air, and the anode () has a passageway () thereto for receiving a fuel. The anode () and cathode () may be formed by etching a cavity for the electrolyte () or by forming trenches () to form each anode () and cathode (), wherein each trench () between an anode and cathode is filled with electrolyte.

2005008, Apr 28, 2005

Oct 24, 2003

10/692548

Lianjun Liu - Gilbert AZ, US
Steven Smith - Gilbert AZ, US

H01H051/22

333262000

A method of making a micromechanical device including forming a dielectric layer over a sacrificial layer, wherein the dielectric layer includes silicon, oxygen and nitrogen. In on embodiment, the dielectric layer is silicon oxynitride formed using plasma enhanced chemical vapor deposition (PECVD). Silicon oxynitride can easily be formed as a low stress material, unlike silicon dioxide, and does not have a large charge trap density like silicon nitride.

7729106, Jun 1, 2010

Mar 29, 2007

11/693445

John J. D'Urso - Chandler AZ, US
Steven M. Smith - Gilbert AZ, US
Steven A. Voight - Gilbert AZ, US
Steve X. Dai - Gilbert AZ, US

Motorola, Inc. - Schaumburg IL

H05K 5/00, H04M 1/00

36167901, 134 32, 34038471, 455567

An apparatus and method is provided for removing smudges () including oils and dust from portable electronic displays. The apparatus comprises a display device () positioned within a housing (), comprising a transparent cover () having a surface () viewable through an opening in the housing () and a susceptibility to receiving contaminants (). A vibration device () is positioned against the transparent cover () to provide motion () in a direction parallel to the surface, thereby causing the contaminants to move () across the surface (). The contaminants () may then be hidden by the housing () or ejected by a motion () perpendicular to the surface by another vibrating device (). Electronic circuitry () is provided for activating the vibration device () either during normal operation of the electronic device or as selected by the user.

2006021, Sep 21, 2006

Mar 17, 2005

11/082437

Steven Smith - Gilbert AZ, US
Bernard Coll - Fountain Hills AZ, US
Jaime Quintero - Mesa AZ, US
Yi Wei - Chandler AZ, US

D01F 9/12

423447300

A process () is provided for preparing a catalyst (). A catalyst () is formed over a substrate (). A gas () comprising hydrogen and carbon is applied to the catalyst (), wherein a carbon seeding layer () is formed on the catalyst (). Carbon nanotubes () may then be grown from the catalyst () having the carbon seeding layer thereon ().