Sean Timothy Halloran
Engineers at 29 Ave, Denver, CO
License number
Colorado 60472
Issued Date
Dec 29, 2003
Renew Date
Dec 29, 2003
Type
Engineer Intern
Address
Address
8800 E 29 Ave, Denver, CO 80238
Personal information
See more information about Sean Timothy Halloran at radaris.comName
Address
Phone
8800 E 29Th Ave, Denver, CO 80238
1865 Blackfoot Trl, Woodland Park, CO 80863
2281 Dahlia St, Denver, CO 80207
8800 29Th St, Denver, CO 80238
8800 E 29Th Ave, Denver, CO 80238
Professional information
Sean Halloran
Location:
Greater Denver Area
Industry:
Semiconductors
Skills:
Thin Films, Photovoltaics, Solar Energy, Design of Experiments, Failure Analysis, Solar Cells, Semiconductors, Engineering Management, JMP, Renewable Energy, Optics, Characterization, Reliability Engineering, Engineering, SPC, Labview, Sputtering, Six Sigma, Minitab, Manufacturing, Agile Methodologies, Agile Project Management, Smart Grid, Power Distribution, Power Systems, Software Project Management, Software Engineering, Control Systems Design, Electrical Controls Design, Lean Software Development, Lean Startup, IP generation
Dynamic System For Variable Heating Or Cooling Of Linearly Conveyed Substrates
US Patent:
2012006, Mar 15, 2012
Filed:
Mar 24, 2011
Appl. No.:
13/070673
Inventors:
Kevin Michael Pepler - Denver CO, US
James Joseph Jones - Arvada CO, US
Sean Timothy Halloran - Denver CO, US
James Joseph Jones - Arvada CO, US
Sean Timothy Halloran - Denver CO, US
Assignee:
PRIMESTAR SOLAR, INC. - Arvada CO
International Classification:
H01L 31/18, G05D 23/00, B05C 11/00
US Classification:
438 61, 118696, 118668, 236 91 D, 257E3111
Abstract:
A system is provided for heating or cooling discrete, linearly conveyed substrates having a gap between a trailing edge of a first substrate and a leading edge of a following substrate in a conveyance direction. The system includes a chamber, and a conveyor operably configured within the chamber to move the substrates through at a conveyance rate. A plurality of individually controlled temperature control units, for example heating or cooling units, are disposed linearly within the chamber along the conveyance direction. A controller is in communication with the temperature control units and is configured to cycle output of the temperature control units from a steady-state temperature output as a function of the spatial position of the conveyed substrates within the chamber relative to the temperature control units so as to decrease temperature variances in the substrates caused by movement of the substrates through the chamber.
Methods And Apparatus Of Arc Prevention During Rf Sputtering Of A Thin Film On A Substrate
US Patent:
2012000, Jan 5, 2012
Filed:
Jun 30, 2010
Appl. No.:
12/827053
Inventors:
Sean Timothy Halloran - Denver CO, US
Assignee:
PRIMESTAR SOLAR, INC. - Arvada CO
International Classification:
C23C 14/34
US Classification:
20419221, 20419212, 20419215, 20429808
Abstract:
Methods of arc prevention during sputtering of a thin film from a semiconducting target onto a substrate are provided. An alternating current (e.g., having a frequency of about 500 kHz to 15 MHz) can be applied from an electrical power supply to the semiconducting target to form a plasma between the substrate and the semiconducting target. This alternating current can be temporarily interrupted for a time sufficient to sustain the plasma between the substrate and the semiconducting target to inhibit arc formation during sputtering. Sputtering systems are also generally provided for arc prevention during sputtering of a thin film from a semiconducting target onto a substrate.
Methods Of Arc Detection And Suppression During Rf Sputtering Of A Thin Film On A Substrate
US Patent:
2012000, Jan 5, 2012
Filed:
Jun 30, 2010
Appl. No.:
12/827029
Inventors:
Sean Timothy Halloran - Denver CO, US
Assignee:
PRIMESTAR SOLAR, INC. - Arvada CO
International Classification:
C23C 14/34
US Classification:
20419212, 20429808
Abstract:
Methods and systems of arc suppression during RF sputtering of a thin film from a semiconducting target onto a substrate are provided. During sputtering, an alternating current of RF frequency can be applied to a semiconducting target to form a plasma. Upon formation of an arc extending from the target, an arc signature can be detected, where the arc signature is simultaneously defined by decreasing plasma voltage from an initial sputtering plasma voltage to an arc plasma voltage and increasing reflective power from an initial sputtering reflective power to an arc reflective power. Upon identification of the arc signature, the alternating current can be temporarily interrupted to the semiconducting target to suppress the arc extending from the target. Thereafter, the alternating current from the electrical power supply can be reapplied to the semiconducting target.
Methods For High-Rate Sputtering Of A Compound Semiconductor On Large Area Substrates
US Patent:
8409407, Apr 2, 2013
Filed:
Apr 22, 2010
Appl. No.:
12/765268
Inventors:
Sean Timothy Halloran - Denver CO, US
Robert Dwayne Gossman - Aurora CO, US
Russell Weldon Black - Longmont CO, US
Robert Dwayne Gossman - Aurora CO, US
Russell Weldon Black - Longmont CO, US
Assignee:
Primestar Solar, Inc. - Arvada CO
International Classification:
C23C 14/00, C23C 14/32, C25B 9/00, C25B 11/00, C25B 13/00
US Classification:
20419226, 20419215, 20419227, 20419228, 20429808, 20429812
Abstract:
Methods are generally provided for sputtering thin films on individual substrates. Individual substrates can be conveyed into a vacuum chamber to draw a sputtering pressure that is less than about 50 mTorr. Then, the individual substrates can be conveyed into a sputtering chamber and past a planar magnetron continuously sputtering a target by an ionized gas at the sputtering pressure such that a thin film is formed on a surface of the individual substrate. The target is subjected to a high frequency power having a frequency from about 400 kHz to about 4 MHz at power levels of greater than about 1 kW. In one particular embodiment, the method can be generally directed to sputtering thin films on individual substrates defining a surface having a surface area of about 1000 cmto about 2500 cm.
Heating System And Methods For Controlling The Heaters Of A Heating System
US Patent:
2013030, Nov 21, 2013
Filed:
May 21, 2012
Appl. No.:
13/476414
Inventors:
Sean Timothy Halloran - Denver CO, US
James Victor Schaefer - Ann Arbor MI, US
James Victor Schaefer - Ann Arbor MI, US
Assignee:
PRIMESTAR SOLAR, INC. - Arvada CO
International Classification:
H05B 1/02, G05D 23/19
US Classification:
219483, 219485, 219486, 219492
Abstract:
A method for controlling a plurality of heaters of a heating system is disclosed. The method may generally include generating control commands for turning on the plurality of heaters during a time period, determining which electrical phase is powering each heater of the plurality of heaters and staggering execution of the control commands across the time period for two or more of the heaters powered by the same electrical phase.
System And Method For Gapping Conveyed Substrates
US Patent:
2013025, Oct 3, 2013
Filed:
Mar 30, 2012
Appl. No.:
13/434911
Inventors:
Sean Timothy Halloran - Denver CO, US
James Victor Schaefer - Ann Arbor MI, US
Frank Sanford Prescott - Berthoud CO, US
James Victor Schaefer - Ann Arbor MI, US
Frank Sanford Prescott - Berthoud CO, US
Assignee:
PRIMESTAR SOLAR, INC. - Arvada CO
International Classification:
H01L 21/677, B65G 43/10, B65G 37/00
US Classification:
414217, 1984601, 19834101
Abstract:
A method for gapping substrates conveyed through a vacuum chamber is disclosed. The method may include positioning an upstream substrate outside the vacuum chamber as a downstream substrate is conveyed within the vacuum chamber, detecting a position of the downstream substrate within the vacuum chamber and conveying the upstream substrate into the vacuum chamber at a conveyance rate greater than a conveyance rate of the downstream substrate to set a gap between the downstream substrate and the upstream substrate.