SCOTT WILLIAMS BALDWIN, MD
Radiology at Samaritan Dr, San Jose, CA

6509542, Jan 21, 2003

Apr 25, 2000

09/557684

Neil Benjamin - Palo Alto CA
Scott Baldwin - San Jose CA

LAM Research Corp. - Fremont CA

B23K 1000

21912143, 21912154, 21912141, 118723 I

A plasma reactor system with controlled DC bias for manufacturing semiconductor wafers and the like. The reactor system includes a plasma chamber, a plasma generating coil and a chuck including a chuck electrode. The chuck supports a workpiece within the chamber. The plasma reactor system further includes a pair of generators, one of which supplies a radio frequency signal to the plasma generating coil. The second generator delivers a RF signal which to the chuck electrode and acts to control DC bias at the workpiece. Peak voltage sensor circuitry and set point signal circuitry controls the power output of the generator, and a matching network coupled between the generator and the first electrode matches the impedance of the RF signal with the load applied by the plasma. DC bias determines the energy with which plasma particles impact the surface of a workpiece and thereby determines the rate at which the process is performed. This DC bias forms at the surface of the workpiece upon generation of a plasma in the plasma chamber and is affected by the RF signal applied to the chuck electrode.

6563076, May 13, 2003

Apr 25, 2000

09/557745

Neil Benjamin - Palo Alto CA
Scott Baldwin - San Jose CA

Lam Research Corporation - Fremont CA

B23K 1000

21912154, 21912143, 21912158, 118723 I, 156345

A plasma reactor system with controlled DC bias for manufacturing semiconductor wafers and the like. The reactor system includes a plasma chamber, a plasma generating coil and a chuck including a chuck electrode. The chuck supports a workpiece within the chamber. The plasma reactor system further includes a pair of generators, one of which supplies a radio frequency signal to the plasma generating coil. The second generator delivers a RF signal which to the chuck electrode and acts to control DC bias at the workpiece. Peak voltage sensor circuitry and set point signal circuitry controls the power output of the generator, and a matching network coupled between the generator and the first electrode matches the impedance of the RF signal with the load applied by the plasma. DC bias determines the energy with which plasma particles impact the surface of a workpiece and thereby determines the rate at which the process is performed. This DC bias forms at the surface of the workpiece upon generation of a plasma in the plasma chamber and is affected by the RF signal applied to the chuck electrode.

6815362, Nov 9, 2004

May 3, 2002

10/138980

Vincent Wong - Pleasanton CA
Brett C. Richardson - San Ramon CA
Andrew Lui - Fremont CA
Scott Baldwin - San Jose CA

Lam Research Corporation - Fremont CA

H01L 21302

438706, 438 8, 438710, 438712, 134 11

A method for determining an endpoint of an in-situ cleaning process of a semiconductor processing chamber is provided. The method initiates with providing an optical emission spectrometer (OES) configured to monitor selected wavelength signals. Then, baseline OES threshold signal intensities are determined for each of the selected wavelength signals. Next, an endpoint time of each step of the in-situ cleaning process is determined. Determining an endpoint time includes executing a process recipe to process a semiconductor substrate within the processing chamber. Executing the in-situ cleaning process and recording the endpoint time for each step of the in-situ cleaning process are also included in determining the endpoint time. Then, nominal operating times are established for each step of the in-situ cleaning process. A plasma processing system for executing a two step in-situ cleaning process is also provided.

2004023, Nov 25, 2004

Jun 25, 2004

10/876442

Vincent Wong - Pleasanton CA, US
Brett Richardson - San Ramon CA, US
Andrew Lui - Fremont CA, US
Scott Baldwin - San Jose CA, US

LAM RESEARCH CORPORATION - FREMONT CA

C23F001/00, H01L021/306, H01L021/302, H01L021/461

438/689000

A plasma processing system is provided. The plasma processing system includes a processing chamber having a gas inlet for introducing cleaning gases. The cleaning gas is optimized to remove byproducts deposited on inner surfaces of the processing chamber. The processing chamber includes a top electrode for creating a plasma from the cleaning gas to perform the cleaning process. A variable conductance meter for controlling a pressure inside the processing chamber independently of a flow rate of process gases is included. The variable conductance meter is positioned on an outlet of the chamber. An optical emission spectrometer (OES) for detecting an endpoint of the cleaning process performed in the processing chamber is included. The OES is located to detect an emission intensity in the processing chamber from the plasma. The OES is configured to trace the emission intensity. A pumping system for evacuating the processing chamber between processing operations is included.

6280563, Aug 28, 2001

Dec 31, 1997

9/001512

Scott K. Baldwin - San Jose CA
Michael S. Barnes - San Ramon CA
John P. Holland - Santa Clara CA

Lam Research Corporation - Fremont CA

C23F 102, C23C 1434, C23C 1600

156345

A plasma processor for a workpiece includes a coil for supplying an r. f. exciting field through a window to a plasma in a vacuum chamber. A powered non-magnetic metal member between the coil and plasma couples the field to the plasma. In first and second embodiments, the metal member is respectively (1) a plate abutting a face of the window inside the chamber and (2) a thin film on an interior face of the window. In a third embodiment, the plate and film are both used. All embodiments help to ignite the plasma. The second embodiment increases plasma stability and prevents window clouding by ionized plasma particles. Metal from the plate is sputtered as a deposit onto the workpiece. The third embodiment enables substantially simultaneous depositing and cleaning.