Inventors:
Patrick A. Kearney - Livermore CA
Scott C. Burkhart - Livermore CA
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
C23C 1434
US Classification:
20419211, 20429804, 31511121, 31511131, 31511161, 31511191, 250423 R, 250424, 25049221, 2504923
Abstract:
A method for producing film thickness control of ion beam sputter deposition films. Great improvements in film thickness control is accomplished by keeping the total current supplied to both the beam and suppressor grids of a radio frequency (RF) in beam source constant, rather than just the current supplied to the beam grid. By controlling both currents, using this method, deposition rates are more stable, and this allows the deposition of layers with extremely well controlled thicknesses to about 0. 1%. The method is carried out by calculating deposition rates based on the total of the suppressor and beam currents and maintaining the total current constant by adjusting RF power which gives more consistent values.