Scott Braxton Croft
Security Companies and Guards in Salt Lake City, UT

License number
Utah 10086791-8012
Issued Date
Sep 7, 2016
Expiration Date
Dec 6, 2016
Category
Security Companies & Guards
Type
Interim Unarmed Private Security Officer
Address
Address
Salt Lake City, UT
Education
PACSCO

Personal information

See more information about Scott Braxton Croft at radaris.com
Name
Address
Phone
Scott Croft
7604 S 1960 W, West Jordan, UT 84084
(801) 255-9406
Scott Croft
80 Courtyard Ln, Centerville, UT 84014
(801) 381-1754
Scott Croft, age 66
830 N 250 W APT 302, Bountiful, UT 84010
(801) 298-4861
Scott Croft, age 66
830 N 250 W, Bountiful, UT 84010
Scott Croft
845 N 200 E, Logan, UT 84321

Professional information

Scott Croft Photo 1

Director Of Laboratories At Iasis Healthcare, Jordan Valley Med Ctr.

Position:
Director of Laboratories at Iasis Healthcare, Jordan Valley Med Ctr., Director of Laboratory Services at IASIS Healthcare, Director of Clinical Laboratories at Jordan Valley Medical Center, Director of Lab at Jordan Valley Medical Center and Pioneer Valley Hospital
Location:
Greater Salt Lake City Area
Industry:
Health, Wellness and Fitness
Work:
Iasis Healthcare, Jordan Valley Med Ctr. - Director of Laboratories IASIS Healthcare since 2005 - Director of Laboratory Services Jordan Valley Medical Center since 2004 - Director of Clinical Laboratories Jordan Valley Medical Center and Pioneer Valley Hospital since 1997 - Director of Lab


Scott Croft Photo 2

Cad Tech At Fairchild Semiconductor

Position:
Cad Tech at Fairchild Semiconductor
Location:
Greater Salt Lake City Area
Industry:
Semiconductors
Work:
Fairchild Semiconductor since 1996 - Cad Tech
Education:
2 Year 1992 - 1996
Associate's degree, Information Technology
Southern Utah University 1977 - 1979
Two Year Certificate, Electronics


Scott Croft Photo 3

Modular Die And Mask For Semiconductor Processing

US Patent:
2011003, Feb 10, 2011
Filed:
Aug 4, 2009
Appl. No.:
12/535093
Inventors:
Scott Croft - Salt Lake City UT, US
International Classification:
H01L 21/50, H01L 21/768
US Classification:
438113, 438669, 257E21575, 257E21499
Abstract:
Modular dies and modular masks that can be used during the manufacture of semiconductor devices are described. The modular mask can be used repeatedly to make multiple, substantially-similar modular dies. The modular die contains a substrate with an integrated circuit as well as a conductive layer containing a source metal and a gate metal connected respectively to the source and gate of the integrated circuit. The gate metal of the conductive layer is located only in an outer portion of the modular die. The modular die can be made by providing the integrated circuit in a first and second portion of the substrate, providing the conductive layer on both the first and second portions, making a first modular die by patterning the conductive layer on the first portion using the modular mask; moving the modular mask to the second portion and using it to make a second modular die by patterning the conductive layer on the second portion. Thus, fewer mask sets need to be made, improving efficiency and reducing costs. Other embodiments are described.