SANG KYUN AHN, DMD
Dentist at El Camino Real, Santa Clara, CA

6559074, May 6, 2003

Dec 12, 2001

10/015713

Steven A. Chen - San Jose CA
Xianzhi Tao - Palo Alto CA
Shulin Wang - Campbell CA
Lee Luo - Fremont CA
Kegang Huang - Fremont CA
Sang H. Ahn - Santa Clara CA

Applied Materials, Inc. - Santa Clara CA

H01L 2131

438791, 438778, 438958, 257649

A silicon nitride layer is formed over transistor gates while the processing temperature is relatively high, typically at least 500° C. , and the pressure is relatively high, typically at least 50 Torr, to obtain a relatively high rate of formation of the silicon nitride layer. Processing conditions are controlled so as to more uniformly form the silicon nitride layer. Generally, the ratio of the NH gas to the silicon-containing gas by volume is selected sufficiently high so that, should the surface have a low region between transistor gates which is less than 0. 15 microns wide and have a height-to-width ratio of at least 1. 0, as well as an entirely flat area of at least 5 microns by 5 microns, the layer forms at a rate of not more than 25% faster on the flat area than on a base of the low region.

2003005, Mar 27, 2003

Sep 25, 2001

09/964075

Lee Luo - Fremont CA, US
Sang Ahn - Santa Clara CA, US
Aihua Chen - San Jose CA, US
Ramaseshan Iyer - Santa Clara CA, US
Shulin Wang - Campbell CA, US
Randhir Singh Thakur - San Jose CA, US

B32B009/00, C23C016/00

427/255280, 428/446000, 428/698000, 427/569000

A method for film deposition that includes, flowing a first reactive gas over a top surface of a wafer in a cold wall single wafer process chamber to form a first half-layer of the film on the wafer, stopping the flow of the first reactive gas, removing residual first reactive gas from the cold wall single wafer process chamber, flowing a second reactive gas over the first half-layer to form a second half-layer of the film where deposition of the second half-layer is non self-limiting, controlling a thickness of the second half-layer by regulating process parameters within the cold wall single wafer process chamber, stopping the flow of the second reactive gas; and removing residual second reactive gas from the cold wall single wafer process chamber.

7297376, Nov 20, 2007

Jul 7, 2006

11/483842

Kang Sub Yim - Santa Clara CA, US
Kelvin Chan - Santa Clara CA, US
Nagarajan Rajagopalan - Santa Clara CA, US
Josephine Ju-Hwei Chang Liu - Boise ID, US
Sang H. Ahn - Santa Clara CA, US
Yi Zheng - San Jose CA, US
Sang In Yi - Sunnyvale CA, US
Vu Ngoc Tran Nguyen - Santa Clara CA, US
Alexandros T. Demos - Fremont CA, US

Applied Materials, Inc. - Santa Clara CA

H05H 1/24

427578, 427532

A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more oxidizing gases to deposit an initiation layer by applying an RF power to the electrode. The organosilicon compound flow rate is then ramped-up to a final flow rate to deposit a first transition layer, upon which one or more porogen compounds is introduced and the flow rate porogen compound is ramped up to a final deposition rate while depositing a second transition layer. A porogen doped silicon oxide layer is then deposited by flowing the final porogen and organosilicon flow rates until the RF power is turned off.

2007013, Jun 14, 2007

Dec 13, 2005

11/304847

Sang Ahn - Santa Clara CA, US
Alexandros Demos - Fremont CA, US
Hichem M'Saad - Santa Clara CA, US

C23C 16/00, C08J 7/04

427515000, 427255280

A method for depositing a low dielectric constant film on a substrate in a chamber from a mixture including two organosilicon compounds is provided. The mixture may further include a hydrocarbon compound and an oxidizing gas. The first organosilicon compound has an average of one or more Si—C bonds per Si atom. The second organosilicon compound has an average number of Si—C bonds per Si atom that is greater than the average number of Si—C bonds per Si atom in the first organosilicon compound. The low dielectric constant film has good plasma/wet etch damage resistance, good mechanical properties, and a desirable dielectric constant.

7105460, Sep 12, 2006

Jul 11, 2002

10/193489

Bok Hoen Kim - San Jose CA, US
Sudha Rathi - San Jose CA, US
Sang H. Ahn - Santa Clara CA, US
Christopher D. Bencher - San Jose CA, US
Yuxiang May Wang - Palo Alto CA, US
Hichem M'Saad - Santa Clara CA, US
Mario D. Silvetti - Morgan Hill CA, US

Applied Materials - Santa Clara CA

H01L 21/31

438778, 438710, 438725, 438763, 438780, 438789, 438790

Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.