DR. SAM SAWAYA, M.D.
Osteopathic Medicine at Bon Terra Dr, Austin, TX

License number
Texas 136829
Category
Osteopathic Medicine
Type
Internal Medicine
License number
Texas N2780
Category
Osteopathic Medicine
Type
Internal Medicine
Address
Address
6003 Bon Terra Dr, Austin, TX 78731
Phone
(512) 981-8051
(888) 616-1651 (Fax)

Personal information

See more information about SAM SAWAYA at radaris.com
Name
Address
Phone
Sam Sawaya
6003 Bon Terra Dr, Austin, TX 78731
Sam Sawaya
9215 Clarewood Dr, Houston, TX 77036
Sam Sawaya
12349 Metric Blvd, Austin, TX 78758
Sam Sawaya
12221 Mo Pac Cir, Austin, TX 78758
Sam Sawaya
2121 El Paseo St, Houston, TX 77054

Organization information

See more information about SAM SAWAYA at bizstanding.com

Sam Sawaya MD

6003 Bon Terra Dr, Austin, TX 78731

Industry:
Internist
Phone:
(202) 444-2937 (Phone)
Sam Elie Sawaya

Professional information

Sam Sawaya Photo 1

Dr. Sam Sawaya - MD (Doctor of Medicine)

Age:
50
Hospitals:
12221 N Mo Pac Expy SUITE 2ND, Austin 78758
NORTH AUSTIN MEDICAL CENTER
12221 N Mo Pac Expy, Austin 78758
St. David's North Austin Medical Center
12221 North Mo Pac Expy, Austin 78758
12221 N Mo Pac Expy SUITE 2ND, Austin 78758
NORTH AUSTIN MEDICAL CENTER
12221 N Mo Pac Expy, Austin 78758
St. David's North Austin Medical Center
12221 North Mo Pac Expy, Austin 78758
Education:
Medical Schools
Baylor College of Medicine


Sam Elie Sawaya Photo 2

Sam Elie Sawaya, Austin TX

Specialties:
Internal Medicine, Hospitalist
Work:
Austin Diag. Clin.
12221 N Mo Pac Expy, Austin, TX 78758
Education:
Baylor College of Medicine (2006)


Sam Sawaya Photo 3

Methods Of Fabricating A Memory Device

US Patent:
6403455, Jun 11, 2002
Filed:
Aug 31, 2000
Appl. No.:
09/653228
Inventors:
Mohamed el-Hamdi - Austin TX
Sam E. Sawaya - Austin TX
Scott Balfour - Sherman TX
Louay M. Semaan - Pflugerville TX
Assignee:
Samsung Austin Semiconductor, L.P. - Austin TX
International Classification:
H01L 2122
US Classification:
438565, 438510, 438542, 438398
Abstract:
Various methods of fabricating circuit devices are provided. In one aspect, a method of fabricating a circuit device on a substrate is provided. The method includes forming a doped silicon structure on the substrate and forming a hemispherical grain silicon film on the silicon structure. The substrate is heated from a first temperature to a second temperature while undergoing exposure to a dopant gas to add a dopant to the hemispherical grain silicon film. The method provides for improved capacitor electrode fabrication via concurrent gas exposure and substrate temperature ramp-up. In this way, dopant gas is introduced before the doped silicon structure transitions from an amorphous state to a polycrystalline state.