RYAN LEE SMITH
Pilots at Garrett Ct, Saint Paul, MN
License number
Minnesota A4192267
Issued Date
Apr 2012
Expiration Date
Apr 2017
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
15975 Garrett Ct, Saint Paul, MN 55124
Professional information
Political Advocacy Director At Minnesota Credit Union Network
Position:
Political Advocacy Director at Minnesota Credit Union Network
Location:
Saint Paul, Minnesota
Industry:
Public Policy
Work:
Minnesota Credit Union Network
- St. Paul, MN since Feb 2012
-
Political Advocacy Director
Pacific West AOR
- Anaheim, CA Sep 2003 - Sep 2011
-
Government Affairs Director
Education:
Arizona State University 1994 - 1998
BA, History
BA, History
Purchasing &Amp; Operations Manager
Position:
Purchasing & Operations Manager at Horizon Foodservice Equipment
Location:
Saint Paul, Minnesota
Industry:
Food & Beverages
Work:
Horizon Foodservice Equipment
since Mar 2011
-
Purchasing & Operations Manager
Whole Foods Market
Oct 2010 - Feb 2011
-
Midwest Associate Floral Coordinator
Whole Foods Market
Oct 2008 - Sep 2010
-
Midwest Distribution Center Crossdock Team Leader
Education:
Saint Mary's University of Minnesota 2000 - 2004
Bachelor of Arts (BA), Philosophy
Bachelor of Arts (BA), Philosophy
Process For Forming Hafnium Oxide Films
US Patent:
6683011, Jan 27, 2004
Filed:
Nov 14, 2001
Appl. No.:
09/992173
Inventors:
Ryan C. Smith - Roseville MN
Tiezhong Ma - San Jose CA
Stephen A. Campbell - Shoreview MN
Wayne L. Gladfelter - Roseville MN
Tiezhong Ma - San Jose CA
Stephen A. Campbell - Shoreview MN
Wayne L. Gladfelter - Roseville MN
Assignee:
Regents of the University of Minnesota - Minneapolis MN
International Classification:
H01L 21469
US Classification:
438785, 438591, 257E21639
Abstract:
A process for forming a hafnium oxide-containing film on a substrate such as silicon that includes introducing an anhydrous hafnium nitrate-containing precursor into a reactor containing the substrate, and converting the precursor into the hafnium oxide-containing film on the substrate by chemical vapor deposition.