Rosemary Smith
Cosmetology in Salt Lake City, UT

License number

Utah 196211-1101

Issued Date

Jan 1, 1911

Expiration Date

Aug 31, 1987

Professional information

See more information about Rosemary Smith at trustoria.com

Executive Office Professional

Position:

Data Entry Specialist at Western Governors University

Location:

Greater Salt Lake City Area

Industry:

Executive Office

Work:

Western Governors University since Jun 2011 - Data Entry Specialist ADP 2005 - 2010 - Tuition Reimbursement Specialist ADP 2001 - 2005 - Plan Enrollment Benefit Representative ADP Jan 2000 - 2001 - Benefit and Payroll Processor ADP 2000 - 2000 - Payroll Administrator American Stores 1997 - 1999 - Procurement Support Technician Davis School District 1988 - 1997 - Interpreter for the Deaf

Education:

Clearfield High School Graduate, Clearfield Utah
Davis Area Technical Center, Kaysville Utah
Hollywood Beauty College

System For Measuring The Concentration Of Chemical Substances

US Patent:

4397714, Aug 9, 1983

Filed:

Jun 16, 1980

Appl. No.:

6/159994

Inventors:

Jiri Janata - Salt Lake City UT
Robert J. Huber - Bountiful UT
Rosemary L. Smith - Salt Lake City UT

Assignee:

University of Utah - Salt Lake City UT

International Classification:

G01N 2726

US Classification:

204 1T

Abstract:

A solid state chemically sensitive integrated circuit includes three field-effect transistors (FETs) fabricated on a single semiconductor substrate. The gate of a first FET is overlaid with a chemically sensitive element that is adapted to create an electrochemical potential at the gate when exposed to selected chemical substances. This gate is also electrically connected to the source of a second FET and the drain of a third FET. The second and third FETs are used as switches to selectively connect the gate of the first FET to ground, to an external reference potential, or to isolate it from all external signals. In the latter case, only the interaction between the chemically sensitive element and external chemical substances may affect the first FET's operation thus allowing the first FET, when so isolated, to provide a measure of the chemical properties of the substance to which its chemically sensitive element is exposed. The presence of the second and third FETs allows the first FET to be protected from static shock during routine handling and when the device is not in use. They also allow the performance of the first FET to be fully characterized by permitting a controlled gate voltage to be applied to the first FET.