MR. RONALD LLOYD PARKER, P.A.
Physician Assistant at Tanglewilde St, Houston, TX

5767551, Jun 16, 1998

Mar 4, 1997

8/811384

Michael C. Smayling - Missouri City TX
Ronald N. Parker - Houston TX
Manuel L. Torreno - late of Houston TX

Texas Instruments Incorporated - Dallas TX

H01L 2912

257370

A process flow which can be used to fabricate a high frequency bipolar transistor 147, a power transistor 146, and non-power MOS devices on a single substrate while maintaining superior performance. The process flow forms an initial high-voltage tank 170 in substrate 150. A thin epitaxial layer 156 is formed on the substrate which overlies the initial high voltage tank and Diffusion Under Film, DUF, region 154. The high voltage tank is extended through the epitaxial layer and power transistor 146 is formed in the high voltage tank and high frequency bipolar transistor 147 is formed in the epitaxial layer using the DUF region as a deep collector. Other types of low voltage devices 139 and 140 and mid voltage devices 141-145 and 148-149 are formed unaffected by the presence of epitaxial layer 156. A single chip transmitter 400 and a single chip receiver 410 is fabricated with high frequency transistors and power devices. A single chip disk controller 460 is fabricated with high frequency transistors and power devices.

5911104, Jun 8, 1999

Feb 20, 1998

9/027369

Michael C. Smayling - Missouri City TX
Ronald N. Parker - Houston TX
Manuel L. Torreno - late of Houston TX

Texas Instruments Incorporated - Dallas TX

H01L 2912

438202

A process flow which can be used to fabricate a high frequency bipolar transistor 147, a power transistor 146, and non-power MOS devices on a single substrate while maintaining superior performance. The process flow forms an initial high-voltage tank 170 in substrate 150. A thin epitaxial layer 156 is formed on the substrate which overlies the initial high voltage tank and Diffusion Under Film, DUF, region 154. The high voltage tank is extended through the epitaxial layer and power transistor 146 is formed in the high voltage tank and high frequency bipolar transistor 147 is formed in the epitaxial layer using the DUF region as a deep collector. Other types of low voltage devices 139 and 140 and mid voltage devices 141-145 and 148-149 are formed unaffected by the presence of epitaxial layer 156. A single chip transmitter 400 and a single chip receiver 410 is fabricated with high frequency transistors and power devices. A single chip disk controller 460 is fabricated with high frequency transistors and power devices.

5917222, Jun 29, 1999

Feb 20, 1998

9/027160

Michael C. Smayling - Missouri City TX
Ronald N. Parker - Houston TX
Manuel L. Torreno - late of Houston TX

Texas Instruments Incorporated - Dallas TX

H07L 2912

257370

A process flow which can be used to fabricate a high frequency bipolar transistor 147, a power transistor 146, and non-power MOS devices on a single substrate while maintaining superior performance. The process flow forms an initial high-voltage tank 170 in substrate 150. A thin epitaxial layer 156 is formed on the substrate which overlies the initial high voltage tank and Diffusion Under Film, DUF, region 154. The high voltage tank is extended through the epitaxial layer and power transistor 146 is formed in the high voltage tank and high frequency bipolar transistor 147 is formed in the epitaxial layer using the DUF region as a deep collector. Other types of low voltage devices 139 and 140 and mid voltage devices 141-145 and 148-149 are formed unaffected by the presence of epitaxial layer 156. A single chip transmitter 400 and a single chip receiver 410 is fabricated with high frequency transistors and power devices. A single chip disk controller 460 is fabricated with high frequency transistors and power devices.

4928267, May 22, 1990

Sep 16, 1985

6/776715

David A. Baglee - Houston TX
Ronald N. Parker - Houston TX

Texas Instruments Incorporated - Dallas TX

G11C 700

365218

A method of reconditioning an electrically programmable semiconductor read only memory cell which includes heating the cell to a temperature which is sufficiently high and for a sufficient duration so that the Write/Erase window is re-opened.

RE33261, Jul 10, 1990

Mar 2, 1989

7/319783

David A. Baglee - Albuquerque NM
Ronald Parker - Houston TX

Texas Instruments, Incorporated - Dallas TX

H01L 2978

357 236

A dynamic one-transistor read/write memory cell employs a trench capacitor to increase the magnitude of the stored charge. The trench is etched into the silicon surface at a diffused N+ capacitor region similar to the N+ bit line, then thick oxide is grown over the bit line and over the capacitor region, but not in the trench; a partial etch followed by regrowth of oxide is used prior to the final etch for most of the depth of the trench, to thereby reduce the effect of undercut. The upper plate of the capacitor is a polysilicon layer extending into the trench and also forming field plate isolation over the face of the silicon bar. A refractory metal word line forms the gate of the access transistor at a hole in the polysilicon field plate.