RONALD EUGENE LEIBENGUTH
Pilots at Franklin Ave, Palmerton, PA

6169756, Jan 2, 2001

Dec 23, 1997

8/997710

Leo Maria Chirovsky - Bridgewater NJ
Lucian Arthur D'Asaro - Madison NJ
William Scott Hobson - Summit NJ
Sanghee Park Hui - New Providence NJ
Ronald Eugene Leibenguth - Palmerton PA
Betty Jyue Tseng - Berkeley Heights NJ
James Dennis Wynn - Plainfield NJ
George John Zydzik - Columbia NJ

Lucent Technologies Inc. - Murray Hill NJ

H01S 5187

372 46

A VCSEL comprises separate current and optical guides that provide unique forms of drive current and transverse mode confinement, respectively. In one embodiment, the optical guide comprises an intracavity high refractive index mesa disposed transverse to the cavity resonator axis and a multi-layered dielectric (i. e. , non-epitaxial) mirror overlaying the mesa. In another embodiment, the current guide comprises an annular first electrode which laterally surrounds the mesa but has an inside diameter which is greater than that of an ion-implantation-defined current aperture. The current guide causes current to flow laterally from the first electrode along a first path segment which is essentially perpendicular to the resonator axis, then vertically from the first segment along a second path segment essentially parallel to that axis, and finally through the current aperture and the active region to a second electrode. The dielectric mirror is deposited only after the formation of the guides in order to facilitate their fabrication.

6503768, Jan 7, 2003

Mar 29, 2001

09/821212

Si Hyung Cho - Macungie PA
Ronald E. Leibenguth - Palmerton PA
Abdallah Ougazzaden - Emmaus PA
Claude L. Reynolds - Sinking Springs PA

Agere Systems Inc. - Allentown PA

H01L 2100

438 21, 438 27, 438 28, 385 14

The present invention provides a method for monolithic integration of multiple devices on an optoelectronic substrate. The method, in a preferred embodiment, includes forming an active layer having a given wavelength over a substrate. The method further includes forming an N-type doped layer over a portion of the active layer to form first and second active regions within the active layer, the first active region having the given wavelength and the second active region having an altered wavelength different from the given wavelength. In one exemplary embodiment, the conditions used to form the N-type doped layer, for example, dopant concentration, growth rate and temperature, cause the difference in wavelength between the given wavelength and the altered wavelength.

6440764, Aug 27, 2002

Nov 22, 2000

09/718962

Marlin Focht - Goleta CA
Ronald Eugene Leibenguth - Palmerton PA
Claude Lewis Reynolds - Sinking Spring PA

Agere Systems Guardian Corp. - Orlando FL

H01L 2120

438 22, 438483, 372 96, 372 45

A method for cooling an MOVPE deposited, As-containing, P-type contact layer includes cooling the contact layer in an arsine environment to preserve the contact layer during the initial stages of the cooling process until a threshold temperature in the range of 560 to 580° C. is attained. During the cooling process, the arsine flow is reduced with respect to the arsine flow used during the MOVPE deposition. After the threshold temperature is attained, the arsine gas is withdrawn and the contact layer is cooled further. Because of the removal of the arsine gas at the threshold temperature, free carrier concentration within the contact layer is enhanced above the atomic concentration of the P-type dopant, and contact resistance is improved to a suitably low level.

6635502, Oct 21, 2003

Dec 20, 2000

09/741358

Si Hyung Cho - Silver Spring MD
William Crossley Dautremont-Smith - Orefield PA
Sun-Yuan Huang - Union City CA
Charles H Joyner - Red Bank NJ
Ronald Eugene Leibenguth - Palmerton PA
Abdallah Ougazzaden - Breiningsville PA

TriQuint Technology Holding Co. - Hillsboro OR

H01L 2100

438 22

The invention is a semiconductor optical device and method of fabrication where the device includes an active region with an active layer having a first index of refraction, and a blocking region having a second, lower index of refraction. A semiconductor layer having an index of refraction higher than the blocking region is formed over both the active and blocking regions so that the semiconductor layer is in closer proximity to the active layer in areas not covered by the blocking region so as to decrease the difference between the effective index of refraction in the active region and the effective refractive index of the blocking region. Such devices are particularly useful for pumping optical amplifiers since greater power can be achieved while maintaining single mode emission.

6614115, Sep 2, 2003

Jul 1, 2002

10/186796

Marlin Focht - Goleta CA
Ronald Eugene Leibenguth - Palmerton PA
Claude Lewis Reynolds - Sinking Spring PA

Agere Systems Inc. - Allentown PA

H01L 2348

257750, 257741, 257745, 257747

A method for cooling an MOVPE deposited, As-containing, P-type contact layer includes cooling the contact layer in an arsine environment to preserve the contact layer during the initial stages of the cooling process until a threshold temperature in the range of 560 to 580° C. is attained. During the cooling process, the arsine flow is reduced with respect to the arsine flow used during the MOVPE deposition. After the threshold temperature is attained, the arsine gas is withdrawn and the contact layer is cooled further. Because of the removal of the arsine gas at the threshold temperature, free carrier concentration within the contact layer is enhanced above the atomic concentration of the P-type dopant, and contact resistance is improved to a suitably low level. A semiconductor optoelectronic device is formed to include such a contact layer, the P-type dopant impurity present in an atomic concentration and the contact layer having a free carrier concentration being greater than the atomic concentration.

5949561, Sep 7, 1999

Apr 15, 1997

8/834461

Keith Wayne Goossen - Aberdeen NJ
Ronald E. Leibenguth - Palmerton PA

Lucent Technologies Inc. - Murray Hill NJ

H04S 1402

359124

A wavelength demultiplexer having at least two photodetectors is disclosed. The photodetectors are arranged in sequential layers along an optical path. The photodetectors differ in bandgap, and are arranged so that the optical signal passes through relatively larger bandgap photodetectors before being received by relatively smaller bandgap detectors. Each photodetector absorbs photons within a predetermined energy range and generates a voltage as a function of the absorbed energy. The photodetectors can be used to detect, and hence demultiplex, a wavelength-division-multiplexed signal.