Inventors:
Robert F. Johnson - Mesa AZ
Assignee:
National Semiconductor Corporation - Santa Clara CA
International Classification:
H01L 21265, B23K 900
Abstract:
Radiant energy, preferably that of a laser, is focused onto the surface of a silicon integrated circuit that contains a thin layer doped to the opposite conductivity type of the underlying silicon. The thin layer can be trimmed so as to tailor its conductivity. Such layers when used in JFET, diode, bipolar transistor, or resistor structures can therefore be precision trimmed. In particular, JFET pairs can be trimmed to a very close match.