Inventors:
Robert B. Campbell - Pittsburgh PA
Assignee:
The United States of America as represented by the United States
Department of Energy - Washington DC
International Classification:
H01L 21265
Abstract:
The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100. degree. -1150. degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.