ROBERT L WALLACE, MD
Emergency Medical Service in Las Vegas, NV

5520563, May 28, 1996

Jun 7, 1995

8/474429

Robert M. Wallace - Dallas TX
Bruce E. Gnade - Dallas TX
Jules D. Levine - Dallas TX
Robert H. Taylor - Richardson TX

Texas Instruments Incorporated - Dallas TX

H01J 9227

445 24

An anode plate 40 for use in a field emission flat panel display device comprises a transparent planar substrate 42 having a plurality of electrically conductive, parallel stripes 46 comprising the anode electrode of the device, which are covered by phosphors 48. sub. R, 48. sub. G and 48. sub. B, and a gettering material 52 in the interstices of the stripes 46. The gettering material 52 is preferably selected from among zirconium-vanadium-iron and barium. The getter 52 may be thermally reactivated by passing a current through it at selected times, or by electron bombardment from microtips on the emitter substrate. The getter 52 may be formed on a substantially opaque, electrically insulating material 50 affixed to substrate 42 in the spaces formed between conductors 46, which acts as a barrier to the passage of ambient light into and out of the device. Methods of fabricating the getter stripes 52 on the anode plate 40 are disclosed.

6040230, Mar 21, 2000

Mar 13, 1998

9/039075

John Mark Anthony - McKinney TX
Robert M. Wallace - Dallas TX
Yi Wei - Chandler AR
Glen Wilk - Dallas TX

Texas Instruments Incorporated - Dallas TX

H01L 2120

438398

An embodiment of the instant invention is a method of forming a nano-rugged silicon-containing layer, the method comprising the steps of: providing a first silicon-containing layer (steps 202 or 802); providing a patterning layer over the first silicon-containing layer (steps 204 or 804); the patterning layer comprised of an amorphous substance; providing a second silicon-containing layer (steps 206 or 808) over the patterning layer; and wherein the patterning layer creates a nano-rugged texture in the second silicon-containing layer. Preferably, the first and second silicon-containing layers are comprised of polycrystalline silicon. In an alternative embodiment, the patterning layer is comprised of a material which has small holes such that the step of providing the second silicon-containing layer utilizes the first silicon-containing layer as a seed layer through the small holes so as to form the second silicon-containing layer. In another alternative embodiment, the second silicon-containing layer is comprised of a plurality of islands of the silicon-containing material separated by voids in the material. Preferably, the patterning layer is comprised of SiO. sub. 2.

5453659, Sep 26, 1995

Jun 10, 1994

8/258803

Robert M. Wallace - Dallas TX
Bruce E. Gnade - Dallas TX
Jules D. Levine - Dallas TX
Robert H. Taylor - Richardson TX

Texas Instruments Incorporated - Dallas TX

H01J 162, H01J 1724

313495

An anode plate 40 for use in a field emission flat panel display device comprises a transparent planar substrate 42 having a plurality of electrically conductive, parallel stripes 46 comprising the anode electrode of the device, which are covered by phosphors 48. sub. R, 48. sub. G and 48. sub. B, and a gettering material 52 in the interstices of the stripes 46. The gettering material 52 is preferably selected from among zirconium-vanadium-iron and barium. The getter 52 may be thermally reactivated by passing a current through it at selected times, or by electron bombardment from microtips on the emitter substrate. The getter 52 may be formed on a substantially opaque, electrically insulating material 50 affixed to substrate 42 in the spaces formed between conductors 46, which acts as a barrier to the passage of ambient light into and out of the device. Methods of fabricating the getter stripes 52 on the anode plate 40 are disclosed.

5352330, Oct 4, 1994

Sep 30, 1992

7/954626

Robert M. Wallace - Dallas TX

Texas Instruments Incorporated - Dallas TX

H01L 2100

156643

The process of using electron beam induced stimulated desorption chemistry to produce structures of nanometer order size on surfaces. By passivating a reconstructed surface and selectively removing such passivation with an electron beam through the electron stimulated desorption effect, the adsorption of other atoms and/or molecules is controlled at predetermined regions and/or lines on the surface.

5606177, Feb 25, 1997

Dec 6, 1994

8/349866

Robert M. Wallace - Dallas TX
Alan C. Seabaugh - Richardson TX

Texas Instruments Incorporated - Dallas TX

H01L 2988

257 25

A resonant tunneling diode (400) made of a silicon quantum well (406) with silicon oxide tunneling barriers (404, 408). The tunneling barriers have openings (430) of size smaller than the electron wave packet spread to insure crystal alignment through the diode without affecting the tunneling barrier height, and the openings (430) have an irregular (nonperiodic) shape.