ROBERT HOWARD DAVIS
Pharmacy in Pittsburgh, PA

License number
Pennsylvania PI093243L
Category
Pharmacy
Type
Pharmacy Intern
Address
Address
Pittsburgh, PA 15221

Personal information

See more information about ROBERT HOWARD DAVIS at radaris.com
Name
Address
Phone
Robert Davis
502 Brookline Blvd, Havertown, PA 19083
Robert Davis, age 81
502 S Main Rd APT 4, Mountain Top, PA 18707
(570) 868-5976
Robert Davis, age 72
504 67Th Ave #2, Philadelphia, PA 19126
Robert Davis
504 Rively Ave, Glenolden, PA 19036

Professional information

See more information about ROBERT HOWARD DAVIS at trustoria.com
Robert Davis Photo 1
Robert Davis - Havertown, PA

Robert Davis - Havertown, PA

Work:
Backroom Concepts and Designs
Vice-President
Franklin Financial - Malvern, PA
Sales Manager
Arbor Handling - Willow Grove, PA
Sales Representative
U.S. Steel Corporation - Fairless Hills, PA
Industrial Engineering Analyst
Education:
Drexel University - Philadelphia, PA
M.B.A. in Finance
West Chester University - West Chester, PA
B.S. in Management


Robert Davis Photo 2
Robert Davis - Pittsburgh, PA

Robert Davis - Pittsburgh, PA

Work:
Pittsburgh East Nissan
Sales & Leasing Representative
Verizon Wireless
Lead Data Coordinator
Verizon Wireless
Customer Service Representative
AT&T Mobility
Customer Service Representative
Hibbett Sports
Cashier
Sears & Roebuck
Merchandising & Pricing Associate
Education:
The University of Akron
Real Estate


Robert Davis Photo 3
Infrastructure Architect At Northrop Grumman Information Systems

Infrastructure Architect At Northrop Grumman Information Systems

Position:
Infrastructure architect at Northrop Grumman Information Systems
Location:
Greater Pittsburgh Area
Industry:
Defense & Space
Work:
Northrop Grumman Information Systems - Infrastructure architect


Robert Davis Photo 4
Owner, A1 Notary &Amp;Insurance Services

Owner, A1 Notary &Amp;Insurance Services

Position:
Owner at A1 Notary &Insurance Services
Location:
Greater Pittsburgh Area
Industry:
Insurance
Work:
A1 Notary &Insurance Services - Owner


Robert Davis Photo 5
Robert Davis

Robert Davis

Specialties:
English
Work:
Community College of Allegheny County


Robert Davis Photo 6
Methods Of Forming Zinc Oxide Based Ii-Vi Compound Semiconductor Layers With Shallow Acceptor Conductivities

Methods Of Forming Zinc Oxide Based Ii-Vi Compound Semiconductor Layers With Shallow Acceptor Conductivities

US Patent:
7723154, May 25, 2010
Filed:
Oct 19, 2006
Appl. No.:
11/551058
Inventors:
Bunmi T. Adekore - Medford MA, US
Jonathan M. Pierce - Raleigh NC, US
Robert F. Davis - Pittsburgh PA, US
George B. Kenney - Medfield MA, US
Assignee:
North Carolina State University - Raliegh NC
LumenZ, LLC - Boston MA
International Classification:
H01L 21/00
US Classification:
438104
Abstract:
A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×10cm. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels. The concentration of zinc in the first reaction gas and the concentration of oxygen in the second reaction gas may be transitioned in an alternating sequence, so that relatively high zinc concentrations in the first reaction gas overlap with relatively low oxygen concentrations in the second reaction gas and vice versa.


Robert Davis Photo 7
Methods Of Forming Zinc Oxide Based Ii-Vi Compound Semiconductor Layers With Shallow Acceptor Conductivities

Methods Of Forming Zinc Oxide Based Ii-Vi Compound Semiconductor Layers With Shallow Acceptor Conductivities

US Patent:
7829376, Nov 9, 2010
Filed:
Apr 7, 2010
Appl. No.:
12/755499
Inventors:
Bunmi T. Adekore - Medford MA, US
Jonathan M. Pierce - Raleigh NC, US
Robert F. Davis - Pittsburgh PA, US
Assignee:
LumenZ, Inc. - Boston MA
International Classification:
H01L 21/00
US Classification:
438104
Abstract:
A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×10cm. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels. The concentration of zinc in the first reaction gas and the concentration of oxygen in the second reaction gas may be transitioned in an alternating sequence, so that relatively high zinc concentrations in the first reaction gas overlap with relatively low oxygen concentrations in the second reaction gas and vice versa.


Robert Davis Photo 8
Portable Radiation Detection System And Method

Portable Radiation Detection System And Method

US Patent:
2009009, Apr 16, 2009
Filed:
Oct 9, 2008
Appl. No.:
12/248359
Inventors:
Fernando A. Ferraro - Apollo PA, US
Robert K. Davis - Pittsburgh PA, US
Joseph Grosholz, JR. - Natrona Heights PA, US
Assignee:
EV PRODUCTS, INC. - Saxonburg PA
International Classification:
G01T 1/24
US Classification:
25037013
Abstract:
A radiation detection system includes a radiation detector and a DC/DC converter that induces an electric field in the radiation detector. A counter circuit outputs a pulse related to the energy of each incoming radiation event on the radiation detector. The peak amplitude of each pulse output by the counter circuit is converted into a digital equivalent value. A means for processing processes each digital equivalent value and counts a number of pulses output by the counter circuit over an interval of time. A port has one or more data lines connected to the means for processing and one or more power lines connected to the DC/DC converter. The port facilitates a connection to a host system which provides a single DC voltage to the DC/DC converter which converts the single DC voltage into a higher level voltage that induces the electric field in the radiation detector.


Robert Davis Photo 9
High-Speed Pulse Discriminating Gamma Ray Camera

High-Speed Pulse Discriminating Gamma Ray Camera

US Patent:
6927396, Aug 9, 2005
Filed:
Oct 24, 2001
Appl. No.:
10/399810
Inventors:
Viatcheslav Vydrin - Pittsburgh PA, US
Robert K. Davis - Pittsburgh PA, US
Joseph Grosholz, Jr. - Natrona Heights PA, US
Kevin B. Parnham - Acton CA, US
Assignee:
II-VI Incorporated - Saxonburg PA
International Classification:
G01T001/00
US Classification:
250367, 250366
Abstract:
A gamma ray camera A includes a crystal array S which includes a plurality of pixels each of which outputs a pixel signal in response to receiving a gamma ray. A first circuit (and ) outputs for each pixel of the crystal array S, when a pixel signal output by the pixel has a predetermined relation to a reference signal, a threshold signal related to the position of the pixel in the crystal array S. A second circuit (and ) outputs a counter value for each pixel signal having a predetermined relation to its threshold signal. Lastly, a third circuit accumulates for each pixel of the crystal array S a count of the counter values output by the second circuit (and ) for the pixel.


Robert Davis Photo 10
Signal Discriminator For Radiation Detection System And Method

Signal Discriminator For Radiation Detection System And Method

US Patent:
2008013, Jun 12, 2008
Filed:
Mar 7, 2006
Appl. No.:
11/815343
Inventors:
Viatcheslav Vydrin - Pittsburgh PA, US
Robert K. Davis - Pittsburgh PA, US
David S. Rundle - Butler PA, US
Assignee:
II-VI INCORPORATED - Saxonburg PA
International Classification:
G01T 1/24
US Classification:
25037009
Abstract:
A radiation detection system is operative for converting () a radiation event into an electrical signal having an amplitude related to the energy of said radiation event, converting () at least a portion of the electrical signal into a count value related to the amplitude of the electrical signal and determining () the energy of the radiation event from the count value.