Inventors:
Robert Charles Heuner - Bound Brook NJ
Michael Barnett Goldman - Belle Mead NJ
Stanley Joseph Niemiec - Somerville NJ
George Ira Morton - Belle Mead NJ
Assignee:
RCA Corporation - New York NY
International Classification:
H03K 1700
Abstract:
The gate insulator of an IGFET, whose gate is connected to the input terminal of a circuit, is protected by limiting the potential difference between any two circuit terminals. Each input and output terminal of the circuit is connected via protective diodes to the power supply lines of the circuit and a high conductivity, low reverse dynamic impedance, diode is connected between the power supply lines. The reverse voltage across the high conductivity diode is less than that of any other diodes at a given current level, whereby only the high conductivity diode conducts substantial currents in the reverse direction.