DR. ROBERT HARVEY FOSTER, D.D.S.
Dentist at Dreamy Draw Dr, Phoenix, AZ

5567243, Oct 22, 1996

Jun 6, 1995

8/468350

Robert F. Foster - Phoenix AZ
Joseph T. Hillman - Scottsdale AZ
Rene E. LeBlanc - East Haven CT

Sony Corporation - Tokyo
Materials Research Corporation - Orangeburg NY

C23C 1600

118730

A method and apparatus for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take pan in the surface reaction. Another method utilizes a gas-dispersing showerhead that is biased with RF energy to form an electrode which generates activated radicals and ions in a concentrated plasma close to the substrate surface. The activated plasma gas radicals and ions utilized in the invention contribute energy to the surface reaction such that the film may be deposited at a substantially lower deposition temperature that is necessary for traditional thermal CVD techniques.

5628829, May 13, 1997

Jun 3, 1994

8/253714

Robert F. Foster - Phoenix AZ
Joseph T. Hillman - Scottsdale AZ
Rikhit Arora - Mesa AZ

Materials Research Corporation - Gilbert AZ

C23C 1600

118723E

Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing apparatus such as a steady stay flow of gas develops between the ring and showerhead. A cylindrical structure extends between the gas-dispersing ring and a showerhead to contain the gas over the showerhead yielding a small boundary layer over the substrate to ensure efficient uniform deposition of a film on a substrate surface. In the one embodiment of the present invention the showerhead is bias with RF energy such that it acts as an electrode to incite a plasma proximate with the substrate for PECVD. The cylinder is isolated from the showerhead such as by a quartz insulator ring to prevent ignition of a plasma within the cylinder, or alternatively, the cylinder is fabricated of zquartz material. The RF showerhead utilizes small gas-dispersing holes to further prevent ignition of a plasma within the cylinder.

6221770, Apr 24, 2001

Jul 30, 1999

9/364020

Joseph T. Hillman - Scottsdale AZ
Robert F. Foster - Phoenix AZ

Tokyo Electron Limited - Tokyo

H01L 2144, H01L 214763

438680

Using plasma enhanced chemical vapor deposition, various layers can be deposited on semiconductor substrates at low temperatures in the same reactor. When a titanium nitride film is required, a titanium film can be initially deposited using a plasma enhanced chemical vapor deposition wherein the plasma is created within 25 mm of the substrate surface, supplying a uniform plasma across the surface. The deposited film can be subjected to an ammonia anneal, again using a plasma of ammonia created within 25 mm of the substrate surface, followed by the plasma enhanced chemical vapor deposition of titanium nitride by creating a plasma of titanium tetrachloride and ammonia within 25 mm of the substrate surface. This permits deposition film and annealing at relatively low temperatures--less than 800. degree. C. When titanium is so deposited over a silicon surface, titanium silicide will form at the juncture which then can be nitrided and coated with titanium or titanium nitride using the plasma enhanced chemical vapor deposition of the present invention.

5567483, Oct 22, 1996

Jun 5, 1995

8/461665

Robert F. Foster - Phoenix AZ
Joseph T. Hillman - Scottsdale AZ
Rikhit Arora - Mesa AZ

Sony Corporation - Tokyo
Materials Research Corporation - Park Ridge NJ

H05H 100

427535

A titanium nitride film is annealed at a temperature less than 500. degree. C. by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatures, making this process useful for integrated circuits containing aluminum elements.

5972790, Oct 26, 1999

Jun 9, 1995

8/489040

Chantal Arena - Le Fontanil, FR
Robert F. Foster - Phoenix AZ
Joseph T. Hillman - Scottsdale AZ
Michael S. Ameen - Phoenix AZ
Jacques Faguet - Toulouse, FR

Tokyo Electron Limited - Tokyo

H01L 214763

438649

Titanium is deposited onto a semiconductor interconnect to form a salicide structure by plasma-enhanced chemical vapor deposition. The reactant gases, including titanium tetrachloride, hydrogen and optionally argon, are combined. A plasma is created using RF energy and the plasma contacts the rotating semiconductor material. This causes titanium to be deposited which reacts with exposed silicon to form titanium silicide without any subsequent anneal. Other titanium deposited on the surface, as well as titanium-rich silicon compositions (TiSi. sub. X wherein X is <2), are removed by chemical etching. If only about 40. ANG. of titanium is deposited, it will selectively deposit onto the silicon structure without coating the oxide spacers of the interconnect. In this embodiment the need to chemically etch the substrate is eliminated.

5378501, Jan 3, 1995

Oct 5, 1993

8/131900

Robert F. Foster - Phoenix AZ
Joseph T. Hillman - Scottsdale AZ

C23C 1600

4272552

Titianium nitride film is deposited upon a semi-conductor substrate by chemical vapor deposition of titanium tetrachloride, ammonia and a diluent at temperatures less than 550. degree. C. This is accomplished by minimizing the boundary layer thickness over the substrate.

2007003, Feb 8, 2007

Aug 5, 2005

11/198372

Robert Foster - Phoenix AZ, US

G09F 17/00, A47G 35/00

428007000, 428542200

A method and apparatus for storing wire ornament hangers. Christmas ornaments are adapted to carry wire ornament hangers and other articles. The ornaments are stored on a Christmas tree or in a container that is opened during the holiday season.