Robert Gibson Hooper
Architects at Gessner Rd, Houston, TX
License number
Colorado 305409
Issued Date
Jul 24, 1998
Renew Date
Nov 1, 2015
Expiration Date
Oct 31, 2017
Type
Architect
Address
Address
25337 S Gessner Rd, Houston, TX 77063
Professional information
Global Production Excellence And Sap Implementation At Hess Corporation
Position:
Global Production Excellence at Hess Corporation
Location:
Houston, Texas Area
Industry:
Oil & Energy
Work:
Hess Corporation
- Houston, Texas Area since Jul 2009
-
Global Production Excellence
Hexion Specialty Chemicals (Company Disolved)
- Houston, Texas Area Jul 2008 - Mar 2009
-
Manager, Global Maintenance Excellence
Atos Origin
- Houston, Texas Area Oct 2007 - Jul 2008
-
Independent Contract Assignment
Marathon Oil Corporation
- Houston, Texas Area Sep 2006 - Oct 2007
-
Independent Contract Assignment
The Clorox Company
Oct 1997 - Sep 2006
-
Sr. Manufacturing Reliability Engineer
Hartford Steam Boiler (Reliability Technologies)
- Houston, Texas Area May 1994 - May 1996
-
Regional Account Manager
Life Cycle Engineering
- Houston, Texas Area May 1987 - May 1996
-
Staff Engineer/Regional Manager
US Navy
Jan 1981 - Dec 1986
-
Submarine Service
Education:
West Coast University 1984 - 1984
BSEE, Electrical Engineering The Pennsylvania State University 1978 - 1981
None, Engineering
BSEE, Electrical Engineering The Pennsylvania State University 1978 - 1981
None, Engineering
Skills:
Lean Manufacturing, Reliability Engineering, Six Sigma, Change Management, Leadership Development, Strategic Leadership, SAP PM,MM,PS,IM,WM, Kaizen, 5S, Staff Management, Maintenance Management, Business Process, Staff Development, Project Planning, MS Project, Software Project Management, SAP, TPM, Operational Excellence, Continuous Improvement, Training, Project Management, Process Improvement, Manufacturing, Cross-functional Team Leadership
Apu Idle Reduction Consultant
Position:
Senior Customer Process Consultant at Mobile Productivity, Inc., Senior Customer Process Consultant at MPI, Senior Customer Process Consultant at Service Repair Solutions, Senior Customer Process Consultant at SRS Inc. (MPI, Identifix and IATN are part of the SRS Family of Companies)
Location:
Houston, Texas Area
Industry:
Automotive
Work:
Mobile Productivity, Inc.
-
Senior Customer Process Consultant
MPI
since 2003
-
Senior Customer Process Consultant
Service Repair Solutions
since 2003
-
Senior Customer Process Consultant
SRS Inc. (MPI, Identifix and IATN are part of the SRS Family of Companies)
since 2003
-
Senior Customer Process Consultant
Education:
General Motors 1970 - 1971
President At Hooper Communications
Position:
President at Hooper Communications
Location:
Houston, Texas Area
Industry:
Telecommunications
Work:
Hooper Communications
since Jun 1986
-
President
Education:
Springwoods High School 1978 - 1981
Interests:
Coaching Youth Football, Golf, Ranching, Hunting, Fishing, Music
Honor & Awards:
Young Entrepreneur of the Year 1991; Houston 100 - 1990,1991
Basin Analyst - Tectonics At Bhpbilliton
Position:
Basin Analyst - Tectonics at BHPBilliton
Location:
Houston, Texas Area
Industry:
Oil & Energy
Work:
BHPBilliton
-
Basin Analyst - Tectonics
President At Robust Systems, Inc.
Position:
President at Robust Systems, Inc.
Location:
Houston, Texas Area
Industry:
Information Technology and Services
Work:
Robust Systems, Inc.
-
President
Low Cost Method For Forming Elevated Metal Bumps On Integrated Circuit Bodies Employing An Aluminum/Palladium Metallization Base For Electroless Plating
US Patent:
4182781, Jan 8, 1980
Filed:
Sep 21, 1977
Appl. No.:
5/835385
Inventors:
Robert C. Hooper - Houston TX
Alexander J. Harrover - Missouri City TX
Michael J. VanHoy - Stafford TX
Charles E. Terry - Houston TX
Alexander J. Harrover - Missouri City TX
Michael J. VanHoy - Stafford TX
Charles E. Terry - Houston TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
C23C 302
US Classification:
427 90
Abstract:
Elevated metal contact bumps are provided on a microelectronic semiconductor circuit, with the use of aluminum-palladium metallization as a base for selective electroless plating. The aluminum and palladium are preferably deposited sequentially in a single operation, i. e. , without exposing the aluminum surface to the atmosphere. The aluminum-palladium film is then patterned in a single step, using an etchant which attacks both metals at substantially the same rate. The metal pattern is then covered with an insulation layer wherein apertures are opened to expose palladium at selected sites for immersion in an electroless plating bath of ionic Cu or Ni for bump formation.
Metal Contacts And Interconnections For Vlsi Devices
US Patent:
4843453, Jun 27, 1989
Filed:
Aug 13, 1987
Appl. No.:
7/084958
Inventors:
Robert C. Hooper - Houston TX
Bobby A. Roane - Manvel TX
Douglas P. Verret - Sugar Land TX
Bobby A. Roane - Manvel TX
Douglas P. Verret - Sugar Land TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 2348, B05D 304
US Classification:
357 71
Abstract:
Metal contacts and interconnections for integrated circuits utilize copper as the primary conductor, with the copper being totally encased in refractory metal layers on both top and bottom surfaces and also sidewalls. The contact hole in silicon oxide may be filled with a plug of refractory metal before the copper is deposited, or the first refractory metal layer may be conformally deposited to coat the sidewalls of the hole.
Method Of Plating An Interconnect Metal Onto A Metal In Vlsi Devices
US Patent:
4619887, Oct 28, 1986
Filed:
Sep 13, 1985
Appl. No.:
6/762886
Inventors:
Robert C. Hooper - Houston TX
Douglas P. Verret - Sugar Land TX
Bobby A. Roane - Manvel TX
Douglas P. Verret - Sugar Land TX
Bobby A. Roane - Manvel TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
G03C 500
US Classification:
430313
Abstract:
A method of plating an interconnect or contact metal of higher conductivity than aluminum onto a metal layer in VLSI devices includes depositing a coating of insulator over the metal layer, patterning and etching the insulator coating into a mask of the reverse image of a desired lead pattern and then depositing the interconnect metal onto the exposed metal layer. Following depositing the insulator mask and underlaying metal is selectively removed.
Method Of Making Metal Contacts And Interconnections For Vlsi Devices With Copper As A Primary Conductor
US Patent:
4742014, May 3, 1988
Filed:
May 10, 1985
Appl. No.:
6/732547
Inventors:
Robert C. Hooper - Houston TX
Bobby A. Roane - Manvel TX
Douglas P. Verret - Sugar Land TX
Bobby A. Roane - Manvel TX
Douglas P. Verret - Sugar Land TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 2128
US Classification:
437192
Abstract:
Metal contacts and interconnections for integrated circuits utilize copper as the primary conductor, with the copper being totally encased in refractory metal layers on both top and bottom surfaces and also sidewalls. The contact hole in silicon oxide may be filled with a plug of refractory metal before the copper is deposited, or the first refractory metal layer may be conformally deposited to coat the sidewalls of the hole.
Non-Toxic Shot Pellets For Shotguns And Method
US Patent:
4881465, Nov 21, 1989
Filed:
Sep 1, 1988
Appl. No.:
7/239310
Inventors:
Robert C. Hooper - Houston TX
Franz R. Brotzen - Houston TX
Franz R. Brotzen - Houston TX
International Classification:
F42B 524
US Classification:
102501
Abstract:
A non-toxic shotgun pellet having ballistic characteristics similar to those of lead shot is made up of particles of a first alloy, containing primarily ferrotungsten, suspended in a matrix of a second alloy, containing primarily lead. The relative amounts of lead and ferrotungsten are selected to minimize cost while keeping the overall lead content to forty percent or less, by weight, to avoid toxicity. The first alloy is formed by diluting the ferrotungsten with iron or steel and carbon at temperatures on the order of 1800. degree. C. in an inert gas environment. The alloy is quenched and then crushed into particles over which is poured the second alloy comprising lead, tin and antimony in order to suspend the first alloy particles in the second alloy mixture.