Inventors:
Robert Powell Williams - Toms River NJ
Murray Arthur Polinsky - Somerville NJ
Assignee:
RCA Corporation - New York NY
International Classification:
H01C 2934
Abstract:
A semiconductor device having an improved passivating structure comprises a first primary passivating layer free of any layer of silicon nitride (Si. sub. 3 N. sub. 4), disposed on a surface of a semiconductor body, a metallic conductor disposed on the first passivating layer, and a secondary passivating overcoat disposed over the metallic conductor, wherein the secondary passivating overcoat includes both a glass layer on the conductor and a low-temperature-deposited (typically 300. degree. C) nitride layer on the glass layer. The device is highly resistant to degradation in the presence of water vapor and corrosive atmospheres.