ROBERT FRANCIS DE FABIO
Pilots at Crown Pt, Burnt Hills, NY
License number
New York A2951999
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
1 Crown Pt, Burnt Hills, NY 12019
Professional information
Process For Preparing A Polycrystalline Diamond Body/Silicon Carbide Substrate Composite
US Patent:
4171339, Oct 16, 1979
Filed:
Apr 17, 1978
Appl. No.:
5/889108
Inventors:
Minyoung Lee - Schenectady NY
Lawrence E. Szala - Scotia NY
Robert C. De Vries - Burnt Hills NY
Lawrence E. Szala - Scotia NY
Robert C. De Vries - Burnt Hills NY
Assignee:
General Electric Company - Schenectady NY
International Classification:
C04B 3556, C04B 3558, B24D 306
US Classification:
264332
Abstract:
A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon carbide ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon carbide substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
Process For Preparing A Polycrystalline Diamond Body/Silicon Nitride Substrate Composite
US Patent:
4173614, Nov 6, 1979
Filed:
Mar 22, 1978
Appl. No.:
5/889107
Inventors:
Minyoung Lee - Schenectady NY
Lawrence E. Szala - Scotia NY
Robert C. De Vries - Burnt Hills NY
Lawrence E. Szala - Scotia NY
Robert C. De Vries - Burnt Hills NY
Assignee:
General Electric Company - Schenectady NY
International Classification:
B24D 308
US Classification:
264332
Abstract:
A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon nitride ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon nitride substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
Method For The Work-Hardening Of Diamonds And Product Thereof
US Patent:
4181505, Jan 1, 1980
Filed:
Apr 17, 1978
Appl. No.:
5/896931
Inventors:
Robert C. De Vries - Burnt Hills NY
Francis P. Bundy - Alplaus NY
Robert H. Wentorf - Schenectady NY
Francis P. Bundy - Alplaus NY
Robert H. Wentorf - Schenectady NY
Assignee:
General Electric Company - Schenectady NY
International Classification:
B24D 302
US Classification:
51307
Abstract:
Extensive development of deformation bands in diamond crystals results from subjecting diamond material properly confined to reduce or eliminate brittle fracture thereof to the simultaneous application of high pressure and temperature in a defined region on the carbon phase diagram, the pressures and temperatures being incapable of bringing about significant crystal-to-crystal bonding of diamond. Plastic deformation resulting in work-hardening of these diamonds can be made to occur at temperatures as low as 900. degree. C. at pressures of about 60 kb. A work-hardened diamond for use in a single-point diamond tool would, for example, be prepared by embedding the diamond in diamond powder to fill the volume thereby inhibiting brittle fracture of the diamond being work-hardened.
Process For Preparing A Silicon-Bonded Polycrystalline Diamond Body
US Patent:
4168957, Sep 25, 1979
Filed:
Mar 22, 1978
Appl. No.:
5/889109
Inventors:
Minyoung Lee - Schenectady NY
Lawrence E. Szala - Scotia NY
Robert C. De Vries - Burnt Hills NY
Lawrence E. Szala - Scotia NY
Robert C. De Vries - Burnt Hills NY
Assignee:
General Electric Company - Schenectady NY
International Classification:
C04B 3556
US Classification:
51309
Abstract:
A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.