Robert C. Jones
Plumbers at Kodiak Dr, Colorado Springs, CO

4826785, May 2, 1989

Jan 27, 1987

7/007065

Paul J. McClure - Colorado Springs CO
Robert E. Jones - Colorado Springs CO

INMOS Corporation - Colorado Springs CO

H01L 2182

437174

A metallic interconnect includes a fuse portion that is readily vaporized upon exposure to the radiant energy of a laser. A layer of optically absorptive material is formed on top of an aluminum based metallic interconnect and together they are formed by a photolithographic and etch technique into a fuse portion. A low energy laser having a Gaussian energy distribution focused on the absorptive layer produces heat in the absorptive layer. The heat is transferred to the underlying aluminum based interconnect. The concentration of energy made possible by the absorptive layer allows the low energy laser to blow the fuse thereby producing an electrical open in the interconnect without damaging surrounding silicon substrate and/or polysilicon structures below or nearby the metal fuse.

4980752, Dec 25, 1990

Dec 29, 1986

6/947013

Robert E. Jones - Colorado Springs CO

Inmos Corporation - Colorado Springs CO

H01L 2348

357 71

An integrated circuit includes a patterned aluminum based interconnect clad on the top and side portions with a layer of transition metal. The cladding of transition metal prevents the formation of both vertical hillocks and lateral protrusions. Preventing these formations increases the reliability of an interconnect by significantly reducing passivation cracking and electrical shorting between interconnects which result from vertical hillock and lateral protrusion formations.

4935801, Jun 19, 1990

Jan 30, 1989

7/304361

Paul J. McClure - Colorado Springs CO
Robert E. Jones - Colorado Springs CO

Inmos Corporation - Colorado Springs CO

H01L 2702, H01L 2348

357 51

A metallic interconnect includes a fuse portion that is readily vaporized upon exposure to the radiant energy of a laser. A layer of optically absorptive material is formed on top of an aluminum based metallic interconnect and together they are formed by a photolithographic and etch technique into a fuse portion. A low energy laser having a Gaussian energy distribuution focused on the absorptive layer produces heat in the absorptive layer. The heat is transferred to the underlying aluminum based interconnect. The concentration of energy made possible by the absorptive layer allows the low energy laser to blow the fuse thereby producing an electrical open in the interconnect without damaging surrounding silicon substrate and/or polysilicon structures below or nearby the metal fuse.

4835118, May 30, 1989

Mar 23, 1987

7/029192

Robert E. Jones - Colorado Springs CO
Lee Kammerdiner - Avondale CO
Michael R. Reeder - Colorado Springs CO

INMOS Corporation - Colorado Springs CO

H01L 21265

437173

A process of manufacturing selectively restructurable conductive links between circuit elements and corresponding spare elements on a semiconductor. A continuous green light laser directed at a non-conductive amorphous region in the links causes the region to recrystallize. This makes the link electrically conductive thereby joining the circuit elements to a corresponding spare element on the semiconductor. The method permits for high density packing of circuit elements and creates a link without producing bulk material movement.

D290290, Jun 9, 1987

Sep 21, 1984

6/652917

Robert E. Jones - Colorado Springs CO

D23140