Robert C Garber
Land Surveyors in Denver, CO
License number
Utah 187384-2203
Issued Date
Jul 28, 2008
Expiration Date
Mar 31, 2017
Category
Engineer/Land Surveyor
Type
Professional Structural Engineer
Address
Address
Denver, CO
Professional information
Director Of Process Engineering At Primestar Solar
Position:
Director of Process Engineering at PrimeStar Solar
Location:
Greater Denver Area
Industry:
Electrical/Electronic Manufacturing
Work:
PrimeStar Solar
since Apr 2010
-
Director of Process Engineering
Tech for Less
Aug 2007 - Apr 2010
-
Director of Operations
Intel
Jun 1996 - Aug 2007
-
Engineering Group Leader
Education:
Massachusetts Institute of Technology - Sloan School of Management 2002 - 2004
MBA and MS, MBA and Chemical Engineering Purdue University 1991 - 1996
BS, Chemical Engineering
MBA and MS, MBA and Chemical Engineering Purdue University 1991 - 1996
BS, Chemical Engineering
Methods Of Short Wavelength Laser Scribing Of A Thin Film Photovoltaic Device
US Patent:
8377737, Feb 19, 2013
Filed:
Nov 30, 2011
Appl. No.:
13/308367
Inventors:
William J. Schaffer - Atascadero CA, US
Luke W. Jacobson - Arvada CO, US
Scott L. French - Superior CO, US
Eric Boese - Westminster CO, US
Robert A. Garber - Denver CO, US
Luke W. Jacobson - Arvada CO, US
Scott L. French - Superior CO, US
Eric Boese - Westminster CO, US
Robert A. Garber - Denver CO, US
Assignee:
Primestar Solar, Inc. - Arvada CO
International Classification:
H01L 21/00
US Classification:
438 86, 438 85, 438 95
Abstract:
Methods for isolating thin film photovoltaic cells on a superstrate are provided. The method includes focusing a laser beam onto a first surface of the superstrate to remove a thin film stack positioned on a second surface of the superstrate, and directing the laser beam across the first surface of the superstrate to form an isolation scribe that is substantially free from the thin film stack. The thin film stack can include a transparent conductive oxide layer on the second surface, an n-type window layer on the transparent conductive oxide layer, and an absorber layer on the n-type window layer. The laser beam can have a laser wavelength of about 370 nm or less, and/or can have a laser wavelength such that the transparent conductive oxide layer absorbs at least about 80% of the laser beam at the laser wavelength.
Methods Of Treating A Semiconductor Layer
US Patent:
2014006, Mar 6, 2014
Filed:
Aug 31, 2012
Appl. No.:
13/601110
Inventors:
Donald Franklin Foust - Glenville NY, US
Hongbo Cao - Cohoes NY, US
Laura Anne Clark - Brighton CO, US
Robert Andrew Garber - Denver CO, US
Wyatt Keith Metzger - Louisville CO, US
Yinghui Shan - Cohoes NY, US
Roman Shuba - Albany CA, US
Hongbo Cao - Cohoes NY, US
Laura Anne Clark - Brighton CO, US
Robert Andrew Garber - Denver CO, US
Wyatt Keith Metzger - Louisville CO, US
Yinghui Shan - Cohoes NY, US
Roman Shuba - Albany CA, US
Assignee:
GENERAL ELECTRIC COMPANY - SHENECTADY NY
International Classification:
H01L 31/18
US Classification:
438 95, 257E31015
Abstract:
Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.
Photovoltaic Devices
US Patent:
2014006, Mar 6, 2014
Filed:
Aug 31, 2012
Appl. No.:
13/601162
Inventors:
Donald Franklin Foust - Glenville NY, US
Hongbo Cao - Cohoes NY, US
Laura Anne Clark - Brighton CO, US
Robert Andrew Garber - Denver CO, US
Wyatt Keith Metzger - Louisville CO, US
Yinghui Shan - Cohoes NY, US
Roman Shuba - Albany CA, US
Hongbo Cao - Cohoes NY, US
Laura Anne Clark - Brighton CO, US
Robert Andrew Garber - Denver CO, US
Wyatt Keith Metzger - Louisville CO, US
Yinghui Shan - Cohoes NY, US
Roman Shuba - Albany CA, US
Assignee:
GENERAL ELECTRIC COMPANY - SCHENECTADY NY
International Classification:
H01L 31/0232
US Classification:
136256
Abstract:
Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.
Side Edge Cleaning Methods And Apparatus For Thin Film Photovoltaic Devices
US Patent:
2013013, May 30, 2013
Filed:
Nov 30, 2011
Appl. No.:
13/308288
Inventors:
Joe Hunter - Fort Collins CO, US
Leonard L. Boyer - Arvada CO, US
Robert A. Garber - Denver CO, US
Donald F. Foust - Glenville NY, US
Leonard L. Boyer - Arvada CO, US
Robert A. Garber - Denver CO, US
Donald F. Foust - Glenville NY, US
Assignee:
PRIMESTAR SOLAR, INC. - Arvada CO
International Classification:
B08B 1/04, A47L 7/00, B08B 5/04
US Classification:
134 9, 134122 R, 15322
Abstract:
Methods for cleaning a side edge of a thin film photovoltaic substrate are provided. A cleaning solution can be applied to a cleaning wheel that has a cleaning surface and is rotatable about an axis. The substrate can then be transported in a machine direction to move the substrate past the cleaning wheel such that the cleaning surface of the cleaning wheel contacts the side edge of the substrate allowing the cleaning solution to remove any thin film present on the side edge of the substrate. Apparatus is also generally provided for cleaning a side edge of a thin film photovoltaic substrate.
Three Terminal Thin Film Photovoltaic Module And Their Methods Of Manufacture
US Patent:
2013013, May 30, 2013
Filed:
Nov 30, 2011
Appl. No.:
13/308314
Inventors:
Luke W. Jacobson - Arvada CO, US
Robert A. Garber - Denver CO, US
Fred Harper Seymour - Evergreen CO, US
Troy Alan Berens - Evergreen CO, US
Robert A. Garber - Denver CO, US
Fred Harper Seymour - Evergreen CO, US
Troy Alan Berens - Evergreen CO, US
Assignee:
PRIMESTAR SOLAR, INC. - Arvada CO
International Classification:
H01L 31/05, H01L 31/0224
US Classification:
136244, 438 80, 257E31126
Abstract:
Thin film photovoltaic devices are generally provided having three terminals. In one embodiment, the thin film photovoltaic device can include a first submodule defined by a first plurality of photovoltaic cells between a first dead cell and a first terminal cell; a second submodule defined by a second plurality of photovoltaic cells between a second dead cell and a second terminal cell; and a joint bus bar electrically connected to the first dead cell and the second dead cell. The first dead cell is adjacent to the second dead cell, with the first dead cell being separated from the second dead cell via a separation scribe. Methods are also generally provided for forming a thin film photovoltaic device.