Inventors:
Brigham Young University - Provo UT, US
Matthew R. Linford - Provo UT, US
Robert C. Davis - Provo UT, US
Anthony Pearson - Vineyard UT, US
Assignee:
BRIGHAM YOUNG UNIVERSITY - Provo UT
International Classification:
H01L 45/00, G11C 17/16
Abstract:
A permanent solid state memory device is disclosed. Recording data in the permanent solid state memory device forms voids in a data layer between a first wire array and a second wire array. Wires of the first wire array extend transversely to wires in the second wire array. The material is made of a carbon allotrope such that when current is passed through the carbon allotrope, the carbon is quickly oxidized (burned) leaving a complete gap (void) where the fuse once was. One of the advantages of this method is that the fuse material is fully oxidized in the particular “neck region of the bowtie”, such that there is no material left over from which dendrites can grow. In other embodiments, the data layer is a metal or metal oxide selected from the following metals: Tungsten (W), Rhenium (Rh), Osmium (Os), Iridium (Ir), Molybdenum (Mo), Ruthenium (Ru), Rhodium (Rh), Chromium (Cr), and Manganese (Mn).