ROBERT AIGNER
Pilots at Olympia Park Cir, Ocoee, FL
License number
Florida A4826618
Issued Date
Apr 2015
Expiration Date
Apr 2016
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
1348 Olympia Park Cir, Ocoee, FL 34761
Professional information
Acoustic Wave Guide Device And Method For Minimizing Trimming Effects And Piston Mode Instabilities
US Patent:
8294331, Oct 23, 2012
Filed:
Mar 7, 2011
Appl. No.:
13/041653
Inventors:
Benjamin P. Abbott - Maitland FL, US
Robert Aigner - Ocoee FL, US
Alan S. Chen - Windermere FL, US
Julien Gratier - Watertown MA, US
Taeho Kook - Orlando FL, US
Marc Solal - Longwood FL, US
Kurt G. Steiner - Orlando FL, US
Robert Aigner - Ocoee FL, US
Alan S. Chen - Windermere FL, US
Julien Gratier - Watertown MA, US
Taeho Kook - Orlando FL, US
Marc Solal - Longwood FL, US
Kurt G. Steiner - Orlando FL, US
Assignee:
TriQuint Semiconductor, Inc. - Hillsboro OR
International Classification:
H03H 9/25, H01L 41/22
US Classification:
310313B, 310313 C, 29 2535
Abstract:
An acoustic wave device operable as a piston mode wave guide includes electrodes forming an interdigital transducer on a surface of the piezoelectric substrate, wherein each of the plurality of electrodes is defined as having a transversely extending center region and transversely opposing edge regions for guiding an acoustic wave longitudinally through the transducer. A Silicon Oxide overcoat covers the transducer and a Silicon Nitride layer covers the Silicon Oxide overcoat within only the center and edge regions. The thickness of the Silicon Nitride layer is sufficient for providing a frequency modification to the acoustic wave within the center region and is optimized with a positioning of a Titanium strip within each of the opposing edge regions. The Titanium strip reduces the acoustic wave velocity within the edge regions with the velocity in the edge regions being less than the wave velocity within the transducer center region.
Biochemical Semiconductor Chip Laboratory Comprising A Coupled Address And Control Chip And Method For Producing The Same
US Patent:
2008019, Aug 21, 2008
Filed:
Nov 29, 2005
Appl. No.:
11/791963
Inventors:
Robert Aigner - Ocoee FL, US
Ralf Brederlow - Poing, DE
Lude Elbrecht - Munchen, DE
Heinrich Heiss - Munchen, DE
Stephan Marksteiner - Neubiberg, DE
Werner Simburger - Haar, DE
Roland Thewes - Grobenzell, DE
Hans-Jorg Timme - Ottobrunn, DE
Ralf Brederlow - Poing, DE
Lude Elbrecht - Munchen, DE
Heinrich Heiss - Munchen, DE
Stephan Marksteiner - Neubiberg, DE
Werner Simburger - Haar, DE
Roland Thewes - Grobenzell, DE
Hans-Jorg Timme - Ottobrunn, DE
International Classification:
H01L 27/00, H01L 21/00, G01N 29/00
US Classification:
257414, 438 49, 73580, 257E21001, 257E27001
Abstract:
A biochemical semiconductor chip laboratory is disclosed including a coupled address and control chip for biochemical analyses and a method for producing the same. In at least one embodiment the semiconductor chip laboratory has a semiconductor sensor chip, which provides numerous analytical positions for biochemical samples in a matrix. The sensor chip is located on the address and control chip and the analytical positions are in electric contact with a printed contact structure on the upper face of the address and control chip via low-resistance through-platings through the semiconductor substrate of the semiconductor chip.
Piston Mode Acoustic Wave Device And Method Providing A High Coupling Factor
US Patent:
7939989, May 10, 2011
Filed:
Sep 22, 2009
Appl. No.:
12/564305
Inventors:
Marc Solal - Longwood FL, US
Julien Gratier - Newton MA, US
Robert Aigner - Ocoee FL, US
Kevin Gamble - Apopka FL, US
Julien Gratier - Newton MA, US
Robert Aigner - Ocoee FL, US
Kevin Gamble - Apopka FL, US
Assignee:
Triquint Semiconductor, Inc. - Orlando FL
International Classification:
H03H 9/25
US Classification:
310313B, 310313 C
Abstract:
An interdigital transducer includes an edge gap length between ends of electrodes and the opposing busbar increased sufficiently for reducing or even eliminating tunneling effects through the gap. As a result, a wave velocity of the acoustic wave within the longitudinally extending edge regions is less than the wave velocity within the transducer center region, and the wave velocity within the opposing gap regions is greater than a velocity in the transducer center region, thus an essentially flat propagation mode results within the aperture of the transducer. A SAW transducer or a SAW resonator on a high coupling substrate will thus guide the energy in the transducer region without a need for apodization. Higher equivalent coupling factors as well as lower losses are obtained.
Temperature Compensation Of Acoustic Resonators In The Electrical Domain
US Patent:
2013010, May 2, 2013
Filed:
Nov 2, 2011
Appl. No.:
13/287859
Inventors:
Robert Aigner - Ocoee FL, US
Assignee:
TRIQUINT SEMICONDUCTOR, INC. - Hillsboro OR
International Classification:
H01L 41/02, H04B 1/38, H03H 9/54
US Classification:
455 902, 310346, 333186
Abstract:
Embodiments of apparatuses, systems and methods relating to temperature compensation of acoustic resonators in the electrical domain are disclosed. Other embodiments may be described and claimed.
Apparatus And Method For Detecting A Rotation
US Patent:
7895892, Mar 1, 2011
Filed:
Dec 30, 2008
Appl. No.:
12/346287
Inventors:
Robert Aigner - Ocoee FL, US
Assignee:
Infineon Technologies AG - Neubiberg
International Classification:
G01P 9/00, G01C 19/56
US Classification:
7350401, 7350404
Abstract:
A rotation sensor has a substrate with a first surface and a second surface. A shear-wave transparent mirror is arranged on the first surface of the substrate, and a shear-wave isolator is arranged above the shear-wave transparent mirror, the shear-wave transparent mirror and the shear-wave isolator being arranged separated from each other to define a Coriolis zone there between. A bulk-acoustic-wave resonator is arranged above the shear-wave isolator, and a shear-wave detector is arranged on the substrate in a direction, in which a shear-wave generated by the bulk-acoustic-wave resonator upon rotation propagates.
Apparatus And Method For Processing A Wafer
US Patent:
2009022, Sep 10, 2009
Filed:
Jan 26, 2009
Appl. No.:
12/359657
Inventors:
Robert Aigner - Ocoee FL, US
Assignee:
Avago Technologies Wireless IP(Singapore) Pte. Ltd - Denver CO
International Classification:
G21K 5/10, G01N 13/10
US Classification:
25049222, 850 1
Abstract:
An method for processing a processing surface of a wafer by means of a processing-beam is disclosed. The method comprises moving the wafer and the processing-beam relative to each other so that the processing-beam scans the processing surface of the wafer in a scanning path having a curved course with continuously or stepwise changing radiuses. An apparatus is also disclosed.
Acoustic Wave Device Employing Reflective Elements For Confining Elastic Energy
US Patent:
7939987, May 10, 2011
Filed:
Oct 23, 2008
Appl. No.:
12/256494
Inventors:
Marc Solal - Longwood FL, US
Robert Aigner - Ocoee FL, US
Julien Gratier - Apopka FL, US
Taeho Kook - Orlando FL, US
Benjamin P. Abbott - Longwood FL, US
Robert Aigner - Ocoee FL, US
Julien Gratier - Apopka FL, US
Taeho Kook - Orlando FL, US
Benjamin P. Abbott - Longwood FL, US
Assignee:
Triquint Semiconductor, Inc. - Orlando FL
International Classification:
H03H 9/145, H03H 9/25
US Classification:
310313R, 310313 B, 310313 D, 333195
Abstract:
An acoustic wave device includes electrodes carried on a surface of a piezoelectric material and an array of reflective obstacles such that elastic energy resulting from a piezoelectric effect is preferentially directed along a primary wave propagation path. The array of reflective obstacles are positioned generally parallel to the surface of the piezoelectric material and redirect acoustic waves typically reflected in other than a desirable direction to along a desired direction generally along the primary propagation path. The obstacles improve performance for SAW and BAW devices by effecting reflected energy and suppressing spurious modes.
Power Amplifier Matching Rf System And Method Using Bulk Acoustics Wave Device
US Patent:
8198958, Jun 12, 2012
Filed:
Mar 30, 2009
Appl. No.:
12/413681
Inventors:
Robert Aigner - Ocoee FL, US
Gernot G. Fattinger - Ocoee FL, US
Mikhail S. Shirokov - Methuen MA, US
Jun C. Jadormio - Lowell MA, US
Gernot G. Fattinger - Ocoee FL, US
Mikhail S. Shirokov - Methuen MA, US
Jun C. Jadormio - Lowell MA, US
Assignee:
Triquint Semiconductor, Inc. - Hillsboro OR
International Classification:
H03H 9/205, H03H 9/54, H03H 9/60
US Classification:
333189, 333191, 310322, 310364
Abstract:
An RF system includes a power amplifier with output impedance and a BAW filter with an input impedance and output impedance. A matching network includes an inductance connecting the power amplifier to the BAW filter and an impedance transformation ratio of at least 1:10 is provided at the output impedance of the power amplifier to the output impedance of the BAW filter.
Bonded Wafer Saw Filters And Methods
US Patent:
8035464, Oct 11, 2011
Filed:
Mar 5, 2009
Appl. No.:
12/398711
Inventors:
Benjamin P. Abbott - Longwood FL, US
Robert Aigner - Ocoee FL, US
Julien Gratier - Apopka FL, US
Taeho Kook - Orlando FL, US
Robert Aigner - Ocoee FL, US
Julien Gratier - Apopka FL, US
Taeho Kook - Orlando FL, US
Assignee:
Triquint Semiconductor, Inc. - Orlando FL
International Classification:
H03H 9/64
US Classification:
333193, 333194, 310313 B
Abstract:
Improved coupling coefficients and desirable filter characteristics are exhibited in a SAW filter including an electrode pattern deposited on a piezoelectric substrate bonded directly to an anti-reflective layer, wherein the anti-reflective layer is bonded to a carrier through an adhesive layer such that a preselected thickness of the anti-reflective layer is sufficient for enhancing an acoustic match between the piezoelectric substrate and the adhesive layer.
High Coupling, Low Loss Saw Filter And Associated Method
US Patent:
8552819, Oct 8, 2013
Filed:
Oct 26, 2011
Appl. No.:
13/282371
Inventors:
Benjamin P. Abbott - Maitland FL, US
Alan Chen - Windermere FL, US
Taeho Kook - Orlando FL, US
Kurt Steiner - Orlando FL, US
Robert Aigner - Ocoee FL, US
Suzanne Combe - Longwood FL, US
Timothy Daniel - Orlando FL, US
Natalya F. Naumenko - Moscow, RU
Julien Gratier - Newton MA, US
Alan Chen - Windermere FL, US
Taeho Kook - Orlando FL, US
Kurt Steiner - Orlando FL, US
Robert Aigner - Ocoee FL, US
Suzanne Combe - Longwood FL, US
Timothy Daniel - Orlando FL, US
Natalya F. Naumenko - Moscow, RU
Julien Gratier - Newton MA, US
Assignee:
TriQuint Semiconductor, Inc. - Hillsboro OR
International Classification:
H03H 9/00
US Classification:
333195, 333133
Abstract:
Disclosed embodiments include a surface acoustic wave device having electrode period, electrode width, and/or ratio of electrode width to electrode period varied in a prescribed manner.