DR. ROBERT A MORGAN, M.D.
Medical Practice in Saint Paul, MN

6727520, Apr 27, 2004

Dec 29, 2000

09/751423

Robert A. Morgan - Plymouth MN
Eva M. Strzelecki - Plymouth MN

Honeywell International Inc. - Morristown NJ

H01L 3300

257 98, 372 45

Improved resonant reflectors are provided for increased mode control of optoelectronic devices. Some of the resonant reflectors provide improved mode control while not requiring significant additional processing steps, making them ideal for commercial applications. Other resonant reflectors reduce or eliminate abrupt changes in the reflectively of the resonant reflector across an optical cavity of an optoelectronic device, allowing them to reduce or eliminate undesirable diffraction effects that are common in many resonant reflectors.

6757312, Jun 29, 2004

Feb 24, 2003

10/373174

Robert Rex Rice - Seattle WA 98124-2007
Neil F. Ruggieri - Seattle WA 98124-2007
J. Stanley Whiteley - Seattle WA 98124-2007
Robert A. Morgan - Plymouth MN 55447
Richard A. Skogman - Plymouth MN 55447

H01S 500

372 43, 372 98, 372 99, 438 29, 438 46

An electron beam pumped semiconductor laser screen and an associated fabrication method are described which provide a display screen that has a relatively long operating lifetime, is less expensive to produce, and operates at lower electron voltages and near room temperature conditions. The laser screen includes a multi quantum well active gain region having quantum wells of GaInP and barrier layers of (Al Ga )InP, thereby permitting operation in the visible, red spectrum. Moreover, the first layer epitaxially grown on the sacrificial substrate is an etch stop layer of (Ga Al ) In P that acts as an etch stop during the subsequent etching of the sacrificial substrate and may also be used to adjust the cavity length to the correct resonance condition. The laser screen also includes an output mirror having alternating layers of two different compositions of Ga Al As that are epitaxially grown on the multi quantum well active gain region. The output mirror can also include a thin, final layer of GaAs to cap the structure and prevent degradation of the Ga Al As layers.

6674777, Jan 6, 2004

Aug 31, 2000

09/652555

James C. Nohava - Inver Grove Heights MN
Robert A. Morgan - Plymouth MN
Eva M. B. Strzelecka - Plymouth MN
Yue Liu - Plymouth MN

Honeywell International Inc. - Morristown NJ

H01S 500

372 44, 372 45

Methods for sealing or passivating the edges of chips such as vertical cavity surface emitting lasers (VCSEL) is disclosed. One method includes oxidizing the edges of die at the wafer level prior to cutting the wafer into a plurality of die. This may be accomplished by etching a channel along the streets between die, followed by oxidizing the channel walls. The oxidation preferably oxidizes the aluminum bearing layers that are exposed by the channel walls inward for distance. Aluminum bearing layers, including AlAs and AlGaAs, may be oxidized to a stable native oxide that is resistant to further oxidation by the environment. After oxidation, the wafer can be cut along the channels into a number of die, each having a protective oxide layer on the side surfaces.

7266135, Sep 4, 2007

Apr 7, 2004

10/819654

Robert A. Morgan - Plymouth MN, US
Eva M. Strzelecki - Plymouth MN, US

Finisar Corporation - Sunnyvale CA

H01S 3/098

372 19, 257 98

In one exemplary embodiment of the invention, a method is employed that is directed to forming a resonant reflector on an optoelectronic device, such as a semiconductor laser for example. The exemplary method involves depositing a first material layer on the top layer of the optoelectronic device, where the first material layer having a refractive index and a thickness of about an odd multiple of a quarter of a wavelength to which the optoelectronic device is tuned. A patterned region is then created that extends at least partially into the first material layer. Selected patterned regions are at least partially filled with a second material that has a refractive index that is greater than the refractive index of the first material layer. Finally, a third layer, having a refractive index greater than the refractive index of the first material layer, is deposited immediately adjacent the first material layer.

5745515, Apr 28, 1998

Jul 18, 1996

8/683277

Teresa M. Marta - White Bear Lake MN
Robert A. Morgan - Plymouth MN

Honeywell Inc. - Minneapolis MN

H01S 319

372 45

A laser is manufactured with an increasing absorption layer disposed within one of the mirrors of the laser. The increasing absorption layer exhibits an increasing absorption coefficient in response to increasing current through the laser by increasing the temperature or carrier concentration of the layer. The increasing absorption coefficient of the increasing absorption layer prevents the output power from the laser from exceeding a preselected magnitude. The absorption coefficient of the increasing absorption layer increases as a function of increasing current and eventually quenches the operation of the laser to provide an inherently eye-safe laser. The laser may also exploit the increasing absorption layer to exhibit optical gating, switching or bistability. In a preferred embodiment of the present invention, the laser is a vertical cavity surface emitting laser.

7288421, Oct 30, 2007

Jul 6, 2004

10/884895

James Allen Cox - New Brighton MN, US
Robert A. Morgan - Plymouth MN, US

Finisar Corporation - Sunnyvale CA

H01L 21/00

438 29, 438 31, 438 32

Methods are disclosed for forming optoelectronic devices. In one example of such a method, a substrate is provided and a partially conductive bottom mirror formed thereon. An active region is then formed on the bottom mirror, and a top mirror formed on the active region. A gain guide is then formed in the top mirror. Finally, a substantially dielectric isolation layer, as well as a resonant reflector, are formed on the top mirror. The isolation layer is interposed between the resonant reflector and the top mirror, and the isolation layer is formed so as to substantially prevent energy in an evanescent tail of a guided mode associated with the resonant reflector from entering the top mirror.

8599897, Dec 3, 2013

Sep 24, 2004

10/948870

James A. Cox - New Brighton MN, US
Robert A. Morgan - Plymouth MN, US

Finisar Corporation - Sunnyvale CA

G02B 6/42

372 99

This disclosure is generally concerned with optical systems that employ guided-mode grating resonant reflector filters (“GMGRF”) to facilitate wavelength and/or polarization selectivity in the optical system. In one example, an optical system is provided that includes first and second tunable detectors. Each of the tunable detectors includes a GMGRF that is tuned to select a corresponding optical wavelength and/or polarization of an optical data channel, such that the optical wavelength and/or polarization associated with the first tunable detector is different from the optical wavelength and/or polarization associated with the second tunable detector. In this way, an array of tunable detectors can be employed to select some or all of the wavelengths and/or polarizations of an optical data signal having a plurality of data channels.