ROBERT A FRYE
Massage Therapy in Boston, MA
License number
Massachusetts 2869
Issued Date
Apr 17, 2008
Expiration Date
Jan 28, 2014
Type
Massage Therapist Practitioner
Address
Address
Boston, MA 02215
Professional information
Photography Professional
Location:
Greater Boston Area
Industry:
Photography
Furniture Sales - Crate &Amp; Barrel, Potter, Freelance Massage Practitioner
Position:
Furniture Expert at Crate and Barrel, Massage Practitioner at f8 bodywork
Location:
Greater Boston Area
Industry:
Retail
Work:
Crate and Barrel
- Downtown Boston since Jul 2007
-
Furniture Expert
f8 bodywork
since Mar 2003
-
Massage Practitioner
Banana Republic
Apr 2003 - Jun 2007
-
Visual Manager
Banana Republic
Apr 2000 - Apr 2003
-
Associate Manager/Women's Merchant
Banana Republic
Feb 1999 - Apr 2000
-
Associate Manager/Men's Merchant
Banana Republic
Sep 1998 - Feb 1999
-
Assistant Manager/Floor Supervisor
Banana Republic
Apr 1996 - Sep 1998
-
Men's Clientele Specialist
Banana Republic
Jun 1995 - Apr 1996
-
Sales Associate
Hooloomooloo, Inc.
Oct 1993 - Apr 1996
-
Gallery Manager
Education:
Massage Institute of New England 2002 - 2003
750 Hour Certification, Swedish. Anatomy, Physiology, Ethics, Hot Stones, Thai Body Work, Business. Fashion Institute of Technology 1985 - 1987
Associate of Arts and Sciences (A.A.S.), Interior Design Fashion Institute of Technology 1983 - 1985
Associate of Arts and Sciences (A.A.S.), Fashion Buying and Merchandising
750 Hour Certification, Swedish. Anatomy, Physiology, Ethics, Hot Stones, Thai Body Work, Business. Fashion Institute of Technology 1985 - 1987
Associate of Arts and Sciences (A.A.S.), Interior Design Fashion Institute of Technology 1983 - 1985
Associate of Arts and Sciences (A.A.S.), Fashion Buying and Merchandising
Skills:
Customer Service, Branding & Identity, Merchandising, Visual Merchandising, Retail, Inventory Management, Fashion, Apparel, Event Planning, Interior Design, Retail Sales, Window Displays, Styling, Store Management
Interests:
Pottery, Art and Design, Art History, Architecture, Photography, Genealogy, Spanish.
Two-Phase Ccd Regenerator - I/O Circuits
US Patent:
4118795, Oct 3, 1978
Filed:
Aug 27, 1976
Appl. No.:
5/718243
Inventors:
Robert Charles Frye - Brighton MA
Alan Harry Katz - New Orleans LA
Charles Robert Hewes - Dallas TX
Alan Harry Katz - New Orleans LA
Charles Robert Hewes - Dallas TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
G11C 2100, G11C 700, G11C 1134
US Classification:
365222
Abstract:
Insulated gate field effect transistor charge regenerator amplifiers respectively cross-couple the output regions of a pair of two-phase CCD structures with the input regions of those structures. Each amplifier senses the level of binary data charge packets from the output region of one of the shift register structures and in response thereto applies a regenerated and inverted binary data charge packet to the input region of the other shift register structure. One of the amplifiers includes logic gating for inputting and outputting data into and from the shift register structure.
A charge regenerator for a two-phase CCD structure comprising first and second shift registers. The charge regenerator comprises a source follower amplifier including a driver transistor, a load transistor and a positive feedback transistor connected between the gate and source of the driver transistor. The gate of the driver transistor is precharged to a predetermined level prior to sensing of the output region charge level and the regenerator inserts into the input region a charge packet corresponding to the data level sensed at the output region, without inversion.
Silicon Gate Ccd Structure
US Patent:
4035906, Jul 19, 1977
Filed:
Nov 1, 1976
Appl. No.:
5/737648
Inventors:
Al F. Tasch - Richardson TX
Robert C. Frye - Brighton MA
Robert C. Frye - Brighton MA
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
B01J 1700
US Classification:
29578
Abstract:
Processes for manufacturing two-phase charge coupled devices (CCDs) having marginally overlapping phase electrodes and utilizing a single insulating material. Offset self-alignment techniques are used to achieve accurate location of ion implanted potential well or potential barrier regions to achieve the required asymmetry of potential wells (or threshold voltages) in each gate region of the CCD with small bit or charge storage element sizes leading to structures having a high packing density. Fabrication of surface and buried channel structures is described.