RICHARD W WILSON, MD
Medical Practice at 40 St, Phoenix, AZ

4150393, Apr 17, 1979

Dec 20, 1979

5/766168

Richard W. Wilson - Phoenix AZ
Marcy B. Goldstein - Phoenix AZ

Motorola, Inc. - Schaumberg IL

H01L 2302, H01L 2312, H01L 3902

357 74

A low parasitic microwave transistor package is provided including a metal header formed from a base member and having a cylindrical center portion; a metallized ceramic insulator formed in an annular ring which is attached to the metal header and surrounding the center portion thereof. A shallow channel is provided in the surface of the pedestal or center portion of the metal header in which a metallized beryllia insulator is attached. Metal leads are attached to the ceramic insulator. The metallized beryllia insulator is suitable for a semiconductor die chip to be attached to the outward surface thereof such that any one of the preferred electrodes of the semiconductor chip can be attached to the header, by stitch bonding, through a very low inductance, low resistance connection. The other electrodes of a semiconductor chip may be selectively attached, via stitch bonds, directly to the metal leads or connected in series thereto through MOS capacitor chips which can be attached to the remaining surface area of the pedestal.

3943556, Mar 9, 1976

Feb 10, 1975

5/548327

Richard W. Wilson - Phoenix AZ

Motorola, Inc. - Chicago IL

H01L 2302, H01L 2312

357 74

A method for manufacturing a low cost high frequency transistor package including a metal header, a metallized apertured ceramic insulator affixed to the header, a metallized beryllia insulator, and two cylindrical bonding rails within the aperture of the ceramic insulator attached to the header. The two bonding rails may be segments of wire. Metal leads are attached to the ceramic insulator. A very low inductance path through the bonding rails to the header results. The method includes positioning a first solder preform on the header, positioning the metallized, apertured ceramic insulator on the first preform, positioning the metallized beryllia insulator and the plated wire segments which form the bonding rails within the aperture of the first preform, positioning second and third preforms on the apertured ceramic insulator metallization, positioning the leads on said second and third preforms, and heating the package in a suitable atmosphere to a temperature above the melting point of the preforms to fuse the parts into a unit.

4159909, Jul 3, 1979

Mar 9, 1978

5/884948

Richard W. Wilson - Phoenix AZ

Motorola, Inc. - Schaumburg IL

C23C 1500

75170

A method for the magnetron sputtering of ferromagnetic material. An alloy of the ferromagnetic material is formed such that the alloy retains the desired characteristics of the material but the alloy has a Curie temperature that is below the sputtering temperature. In particular, the method can be applied to nickel by alloying the nickel with copper, platinum, or tin.

4087314, May 2, 1978

Sep 13, 1976

5/723006

William L. George - Scottsdale AZ
Richard W. Wilson - Phoenix AZ

Motorola, Inc. - Schaumburg IL

C23F 102

156643

A metallization system and process for forming bonding pedestals suitable for subsequent gang-bonding of multileaded semiconductor devices. The metallurgical components are selected for corrosion resistance and permit the use of selective etchants for yield enhancement.

4094761, Jun 13, 1978

Jul 25, 1977

5/818681

Richard W. Wilson - Phoenix AZ

Motorola, Inc. - Schaumburg IL

C23C 1500

204192M

A method for the magnetron sputtering of ferromagnetic material. An alloy of the ferromagnetic material is formed such that the alloy retains the desired characteristics of the material but the alloy has a Curie temperature that is below the sputtering temperature. In particular, the method can be applied to nickel by alloying the nickel with copper, platinum, or tin.