RICHARD TRACZEWSKI
Broker in Milton, MA
License number
Massachusetts 104274
Issued Date
Aug 1, 1978
Expiration Date
Nov 23, 1988
Type
Broker
Address
Address
Milton, MA 02186
Professional information
Metalorganic Vapor Phase Epitaxial Growth Of Group Ii-Vi Semiconductor Materials
US Patent:
4568397, Feb 4, 1986
Filed:
Sep 12, 1984
Appl. No.:
6/649650
Inventors:
William E. Hoke - Wayland MA
Richard Traczewski - Milton MA
Peter J. Lemonias - Watertown MA
Richard Traczewski - Milton MA
Peter J. Lemonias - Watertown MA
Assignee:
Raytheon Company - Lexington MA
International Classification:
H01L 21365, H01L 3100
US Classification:
148175
Abstract:
A method for growing a Group II-VI epitaxial layer on a substrate, said epitaxial layer having an electron mobility greater than 1. 5. times. 10. sup. 5 cm. sup. 2 /V-sec at 77. degree. K. and a carrier concentration less than 4. times. 10. sup. 15 (cm. sup. -3) is described. The method includes the steps of directing a plurality of vapor flows towards the substrate including a Group II metalorganic vapor having a mole fraction in the range of 3. times. 10. sup. -4 to 4. 5. times. 10. sup. -4, a Group VI metalorganic vapor having a mole fraction in the range of 2. 9. times. 10. sup. -3 to 3. 5. times. 10. sup. -3 and a Group II elemental metal vapor having a mole fraction in the range of 2. 6. times. 10. sup. -2 to 3. 2. times. 10. sup. -2. The source of Group II metal is heated to at least 240. degree. C. while radiant energy is directed toward the reactor vessel to warm the zone of the reactor vessel between the Group II metal source and the substrate to at least 240. degree. C.