Inventors:
Stephen T. Chambers - Portland OR
Richard G. Taylor - Portland OR
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 2976, H01L 2358, H01L 27082, H01L 27102
Abstract:
A BiCMOS process where a base region is formed in a relatively highly doped n-type substrate region. Boron is implanted at two different energy levels to form the base region and a counter doped n region near the base collector junction to prevent impact ionization.