RICHARD ALAN GOTTSCHO
Pilots at Castlewood Dr, Pleasanton, CA

6632322, Oct 14, 2003

Jun 30, 2000

09/607599

Richard A. Gottscho - Pleasanton CA
Robert J. Steger - Los Altos CA

Lam Research Corporation - Fremont CA

C23C 1600

15634533, 15634534, 15634548, 118715, 118723 R, 118723 I

A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the component to a desired region of the process chamber. The component delivery mechanism further includes a spatial distribution switch coupled to the plurality of component outputs. The spatial distribution switch is arranged for directing the component to at least one of the plurality of component outputs. The component delivery mechanism also includes a single component source coupled to the spatial distribution switch. The single component source is arranged for supplying the component to the spatial distribution switch.

RE39534, Mar 27, 2007

Nov 22, 2002

10/302567

David Cooperberg - Mount Kisco NY, US
Richard A. Gottscho - Pleasanton CA, US
Vahid Vahedi - Albany CA, US

Lam Research Corporation - Fremont CA

G05B 13/02

700 28, 700 30, 700 31, 700 34, 700 47, 700 52, 700121, 702 81, 702 85, 702104, 703 6, 703 22, 438 5, 438 14

A method and apparatus for calibrating a semi-empirical process simulator used to determine process values in a plasma process for creating a desired surface profile on a process substrate includes providing a test model which captures all mechanisms responsible for profile evolution in terms of a set of unknown surface parameters. A set Sets of test conditions processes is are derived for which the profile evolution is governed by only a limited number of parameters. For each set of test conditions process, model test values are selected and a test substrate is substrates are actually subjected to a the test process processes defined by the test values , thereby creating a test surface profile profiles. The test values are used to generate an approximate profile prediction predictions and are adjusted to minimize the discrepancy between the test surface profile profiles and the approximate profile prediction predictions, thereby providing a final model of the profile evolution in terms of the process values.

7254510, Aug 7, 2007

Aug 2, 2006

11/498544

Neil Benjamin - Austin TX, US
Richard Alan Gottscho - Pleasanton CA, US
Nicolas Bright - San Jose CA, US
Robert Steger - San Jose CA, US

Lam Research Corporation - Fremont CA

G06F 19/00

702117, 438 14

A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.

6301510, Oct 9, 2001

Jun 30, 2000

9/607882

David Cooperberg - Mt. Kisco NY
Richard A. Gottscho - Pleasanton CA
Vahid Vahedi - Albany CA

Lam Research Corporation - Fremont CA

G05B 1302, G06F 1900

700 28

A method and apparatus for calibrating a semi-empirical process simulator used to determine process values in a plasma process for creating a desired surface profile on a process substrate includes providing a test model which captures all mechanisms responsible for profile evolution in terms of a set of unknown surface parameters. A set of test conditions is derived for which the profile evolution is governed by only a limited number of parameters. For each set of test conditions, test values are selected and a test substrate is actually subjected to a test process defined by the test values, thereby creating a test surface profile. The test values are used to generate an approximate profile prediction and are adjusted to minimize the discrepancy between the test surface profile and the approximate profile prediction, thereby providing a final model of the profile evolution in terms of the process values.

6151532, Nov 21, 2000

Mar 3, 1998

9/033997

Maria E. Barone - Sunnyvale CA
Richard A. Gottscho - Pleasanton CA
Vahid Vahedi - Albany CA

Lam Research Corporation - Fremont CA

G06F 1900

700121

The invention provides a method for predicting a process surface profile that a given plasma process will create on a process substrate. The prediction is based on a test surface profile, the experimental outcome of a test process which is in general different from the plasma process of interest. In another aspect, the invention provides a technique for defining a plasma process that will produce a desired surface profile. Thus, in related aspects, the invention also provides apparatus for predicting a process surface profile and determining process values, a method of configuring a plasma reactor, a method of making semiconductor devices requiring limited empirical calibration, and a device made according to the method.

7282454, Oct 16, 2007

Aug 15, 2003

10/642463

Richard A. Gottscho - Pleasanton CA, US
Robert J. Steger - Los Altos CA, US

Lam Research Corporation - Fremont CA

H05H 1/24, H05B 6/00, H01L 21/302, C23C 16/00

438714, 427595, 427569, 118723 R, 118723 MP, 118723 E, 438710, 438718

A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the component to a desired region of the process chamber. The component delivery mechanism further includes a spatial distribution switch coupled to the plurality of component outputs. The spatial distribution switch is arranged for directing the component to at least one of the plurality of component outputs. The component delivery mechanism also includes a single component source coupled to the spatial distribution switch. The single component source is arranged for supplying the component to the spatial distribution switch.

2012003, Feb 9, 2012

Aug 6, 2010

12/852364

Ali Shajii - Weston MA, US
Richard Gottscho - Dublin CA, US
Souheil Benzerrouk - Hudson NH, US
Andrew Cowe - Andover MA, US
Siddharth P. Nagarkatti - Acton MA, US
William R. Entley - Wakefield MA, US

C23F 1/00, C23F 1/08

216 59, 15634526, 15634535, 216 68

A plasma source includes multiple ring plasma chambers, multiple primary windings, multiple ferrites and a control system. Each one of the primary windings is wrapped around an exterior one of the ring plasma chambers. Each one of the plurality of the ring plasma chamber passes through a respective portion of the plurality of ferrites. The control system is coupled to each of the ring plasma chambers. A system and method for generating and using a plasma are also described.

2012003, Feb 9, 2012

Aug 6, 2010

12/852352

Ali Shajii - Weston MA, US
Richard Gottscho - Dublin CA, US
Souheil Benzerrouk - Hudson NH, US
Andrew Cowe - Andover MA, US
Siddharth P. Nagarkatti - Acton MA, US
William R. Entley - Wakefield MA, US

H05H 1/02

427571, 118623

A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber and multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites. A system and method for generating a plasma are also described.

2012003, Feb 9, 2012

Aug 6, 2010

12/852375

Ali Shajii - Weston MA, US
Richard Gottscho - Dublin CA, US
Souheil Benzerrouk - Hudson NH, US
Andrew Cowe - Andover MA, US
Siddharth P. Nagarkatti - Acton MA, US
William R. Entley - Wakefield MA, US

H01L 21/3065, H05B 31/26, G05B 13/02, H01J 61/28

700274, 15634535, 31323131, 31511141

A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber, multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites and multiple plasma chamber outlets coupling the plasma chamber to a process chamber. Each one of the plasma chamber outlets having a respective plasma restriction. A system and method for generating a plasma are also described.

6921724, Jul 26, 2005

Sep 4, 2002

10/235453

Tom A. Kamp - San Jose CA, US
Richard Gottscho - Pleasanton CA, US
Steve Lee - Fremont CA, US
Chris Lee - Oakland CA, US
Yoko Yamaguchi - Fremont CA, US
Vahid Vahedi - Albany CA, US
Aaron Eppler - Fremont CA, US

Lam Research Corporation - Fremont CA

H01L021/302

438715, 438714, 15634552, 15634553

An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.