Inventors:
Kevin Lite - Portland OR, US
Quynh Tran - Vancouver WA, US
Assignee:
Siltronic Corporation - Portland OR
International Classification:
B32B 7/02, H01L 21/20
Abstract:
An epitaxial silicon wafer is provided with a thickness in the area adjacent the edge that is greater or less than the thickness adjacent the center. The wafer may be manufactured by a method wherein one or more process parameters are adjusted during deposition of epitaxial layer to control the edge thickness.