QIANG ZHAO
Massage Therapy at Rural Dr, Monterey Park, CA

License number
Florida 78715
Issued Date
Apr 9, 2015
Effective Date
Apr 9, 2015
Expiration Date
Aug 31, 2017
Category
Health Care
Type
Massage Therapist
Address
Address 2
525 N Rural Dr #C, Monterey Park, CA 91755
27 S 33Rd St, San Jose, CA 95116
Phone
(408) 677-9963

Professional information

Qiang Zhao Photo 1

Methods For Measurement Or Analysis Of A Nitrogen Concentration Of A Specimen

US Patent:
7349079, Mar 25, 2008
Filed:
May 14, 2004
Appl. No.:
10/845982
Inventors:
Qiang Zhao - San Jose CA, US
Torsten Kaack - Los Altos CA, US
Sungchul Yoo - Campbell CA, US
Zhengquan Tan - Cupertino CA, US
Assignee:
KLA-Tencor Technologies Corp. - Milpitas CA
International Classification:
G01N 21/41
US Classification:
356128
Abstract:
A method for measurement of a specimen is provided. The method includes measuring spectroscopic ellipsometric data of the specimen. The method also includes determining a nitrogen concentration of a nitrided oxide gate dielectric formed on the specimen from the spectroscopic ellipsometric data. A computer-implemented method for analysis of a specimen is also provided. This method includes determining a nitrogen concentration of a nitrided oxide gate dielectric formed on the specimen from spectroscopic ellipsometric data generated by measurement of the specimen. In some embodiments, the methods described above may include determining an index of refraction of the nitrided oxide gate dielectric from the spectroscopic ellipsometric data and determining the nitrogen concentration from the index of refraction. In another embodiment, the methods described above may include measuring reflectometric data of the specimen. The nitrogen concentration may be determined from the spectroscopic ellipsometric data in combination with the reflectometric data.


Qiang Zhao Photo 2

Fabrication Of A Semiconductor Device With Air Gaps For Ultra-Low Capacitance Interconnections

US Patent:
6165890, Dec 26, 2000
Filed:
Jan 21, 1998
Appl. No.:
9/009952
Inventors:
Paul A. Kohl - Atlanta GA
Qiang Zhao - San Jose CA
Sue Ann Bidstrup Allen - Atlanta GA
Assignee:
Georgia Tech Research Corporation - Atlanta GA
International Classification:
H01L 214763
US Classification:
438619
Abstract:
A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a norbornene-type polymer is used as a sacrificial material to occupy a closed interior volume in a semiconductor structure. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, preferably by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the norbornene-type polymer. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween.


Qiang Zhao Photo 3

Fabrication Of A Semiconductor Device With Air Gaps For Ultra-Low Capacitance Interconnections

US Patent:
7504699, Mar 17, 2009
Filed:
Nov 21, 2000
Appl. No.:
09/717567
Inventors:
Paul A. Kohl - Atlanta GA, US
Qiang Zhao - San Jose CA, US
Sue Ann Bidstrup Allen - Atlanta GA, US
Assignee:
George Tech Research Corporation - Atlanta GA
International Classification:
H01L 21/331, H01L 21/76, H01L 21/4763, H01L 21/44, H01L 21/469, H01L 21/461
US Classification:
257410, 257508, 257522, 257758, 257759, 257760, 438319, 438411, 438421, 438422, 438618, 438619, 438622, 438623, 438624, 438625, 438626, 438687, 438692, 438693
Abstract:
A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a norbornene-type polymer is used as a sacrificial material to occupy a closed interior volume in a semiconductor structure. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, preferably by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the norbornene-type polymer. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween.


Qiang Zhao Photo 4

Method For Identifying Self-Generated Spurious Signals

US Patent:
2013023, Sep 12, 2013
Filed:
Mar 9, 2012
Appl. No.:
13/416517
Inventors:
Christian Volf OLGAARD - Saratoga CA, US
Qiang ZHAO - San Jose CA, US
Assignee:
LITEPOINT CORPORATION - Sunnyvale CA
International Classification:
G01R 27/04
US Classification:
324633
Abstract:
A local oscillator (LO) of a test system is set to an initial frequency whereupon a device under test (DUT) transmits a radio frequency (RF) signal to the test system. Characteristics of the RF signal are measured with the test system and used to identify magnitudes and frequencies of spurious signal products. The LO of the test system is reset to one or more subsequent frequencies that are offset from the initial frequency. One or more subsequent RF signals are transmitted from the DUT to the test system, with the DUT maintaining its original signal settings. Characteristics of the subsequent RF signals are measured with the test system and used to identify magnitudes and frequencies of spurious signal products for each of the subsequent LO frequencies. The spurious signal products that have shifted in frequency for each of the subsequent LO frequencies as self-generated signal products can then be identified.


Qiang Zhao Photo 5

Solvent Systems For Low Dielectric Constant Polymeric Materials

US Patent:
6291628, Sep 18, 2001
Filed:
Jan 21, 1999
Appl. No.:
9/235141
Inventors:
Qiang Zhao - San Jose CA
Assignee:
Allied Signal Inc. - Morristown NJ
International Classification:
C08G 7902
US Classification:
528169
Abstract:
A polymeric low dielectric constant solution includes a low dielectric constant polymer dissolved in an aromatic aliphatic ether solvent. The polymer preferably is a poly(arylene ether) and the solvent preferably is anisole, methylanisole, phenetole or mixtures thereof. A process for forming a dielectric film on a substrate by spin-coating the polymeric solution is also provided.