PRESTON SCOTT DAVIS, NURSE PRACTITIONER
Nursing at Roswell Rd, Atlanta, GA

2011013, Jun 16, 2011

Aug 25, 2010

12/868240

Daniel Meier - Norcross GA, US
Ajeet Rohatgi - Marietta GA, US
Vinodh Chandrasekaran - Suwanee GA, US
Vijay Yelundur - Canton GA, US
Preston Davis - Atlanta GA, US
Ben Damiani - Atlanta GA, US

H01L 31/0264, H01L 31/02, H01L 31/18

136255, 136252, 438 72, 257E31119

Solar cells and methods for their manufacture are disclosed. An example method may include fabricating an n-type silicon substrate and introducing n-type dopant to one or more first and second regions of the substrate so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to form a selective front surface field layer. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. The firing of the back contact may form a p emitter layer at the interface of the substrate and back contacts, thus forming a p-n junction at the interface of the emitter layer and the substrate. Associated solar cells are also provided.

2012010, May 3, 2012

Jan 9, 2012

13/346354

AJEET ROHATGI - MARIETTA GA, US
VIJAY YELUNDUR - CANTON GA, US
VINODH CHANDRASEKARAN - SUWANEE GA, US
PRESTON DAVIS - ATLANTA GA, US
BEN DAMIANI - ATLANTA GA, US

SUNIVA, INC. - Norcross GA

H01L 31/18

438 72, 438 98, 257E31124

Solar cells and methods for their manufacture are disclosed. An example method may include providing a substrate comprising a base layer and introducing n-type dopant to the front surface of the base layer by ion implantation. The substrate may be annealed by heating the substrate to a temperature to anneal the implant damage and activate the introduced dopant, thereby forming an n-type doped layer into the front surface of the base layer. Oxygen may be introduced during the annealing step to form a passivating oxide layer on the n-type doped layer. Back contacts may be screen-printed on the back surface of the base layer, and a p-type doped layer may be formed at the interface of the back surface of the base layer and the back contacts during firing of the back contacts. The back contacts may provide an electrical connection to the p-type doped layer.

2011013, Jun 16, 2011

Jun 3, 2010

12/793334

Ajeet Rohatgi - Marietta GA, US
Vijay Yelundur - Canton GA, US
Preston Davis - Atlanta GA, US
Vinodh Chandrasekaran - Suwanee GA, US
Ben Damiani - Atlanta GA, US

H01L 31/0352, H01L 31/18

136255, 438 72, 257E31032

Solar cells and methods for their manufacture are disclosed. An example method may include providing a silicon substrate and introducing dopant to one or more selective regions of the front surface of the substrate by ion implantation. The substrate may be subjected to a single high-temperature anneal cycle. Additional dopant atoms may be introduced for diffusion into the front surface of the substrate during the single anneal cycle. A selective emitter may be formed on the front surface of the substrate such that the one or more selective regions of the selective emitter layer are more heavily doped than the remainder of the selective emitter layer. Associated solar cells are also provided.

8110431, Feb 7, 2012

Jun 3, 2010

12/793363

Ajeet Rohatgi - Marietta GA, US
Vijay Yelundur - Canton GA, US
Vinodh Chandrasekaran - Suwanee GA, US
Preston Davis - Atlanta GA, US
Ben Damiani - Atlanta GA, US

Suniva, Inc. - Norcross GA

H01L 31/18

438 98, 438530, 438533, 257E21147

Solar cells and methods for their manufacture are disclosed. An example method may include providing a p-type doped silicon substrate and introducing n-type dopant to a first and second region of the front surface of the substrate by ion implantation so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to activate the dopant, drive the dopant into the substrate, produce a p-n junction, and form a selective emitter. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided.

2012012, May 24, 2012

Nov 21, 2011

13/301372

AJEET ROHATGI - MARIETTA GA, US
VIJAY YELUNDUR - CANTON GA, US
PRESTON DAVIS - ATLANTA GA, US
VINODH CHANDRASEKARAN - SUWANEE GA, US
BEN DAMIANI - ATLANTA GA, US

SUNIVA, INC. - NORCROSS GA

H01L 31/0352, H01L 31/0232

136255, 438 72, 257E31127

Solar cells and methods for their manufacture are disclosed. An example solar cell may comprise a substrate comprising a p-type base layer and an n-type selective emitter layer formed over the p-type base layer. The n-type selective emitter layer may comprise one or more first doped regions comprising implanted dopant and one or more second doped regions comprising diffused dopant. The one or more first doped regions may be more heavily doped than the one or more second doped regions. A p-n junction may be formed at the interface of the base layer and the selective emitter layer, such that the p-n junction and the selective emitter layer are both formed during a single anneal cycle.