PHILIP EDWARD BATSON
Pilots at Bedford Rd, Katonah, NY

6590750, Jul 8, 2003

Feb 10, 1998

09/021352

David William Abraham - Ossining NY
Philip Edward Batson - Katonah NY
John Slonczewski - Katonah NY
Philip Louis Trouilloud - Mahwah NJ
William Joseph Gallagher - Ardsley NY
Stuart Parkin - San Jose CA

International Business Machines Corporation - Armonk NY

G11B 539

3603242, 3603241

Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e. g. , the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region. The principles of the present invention can be applied to magnetic random access memory (“MRAM”) arrays, which employ giant magnetoresistive (“GMR”) cells, or magnetic tunnel junction (“MTJ”) cells, at the intersections of bitlines and wordlines, and also to magnetic sensors such as magnetic data storage devices having access elements used to access data on a magnetic data storage medium.

6452764, Sep 17, 2002

Oct 16, 2000

09/688732

David William Abraham - Ossining NY
Philip Edward Batson - Katonah NY
William Joseph Gallagher - Ardsley NY
Stuart Parkin - San Jose CA
John Slonczewski - Katonah NY
Philip Louis Trouilloud - Mahwah NJ

International Business Machines Corporation - Armonk NY

G11B 539

3603242, 365173

Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e. g. , the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region. The principles of the present invention can be applied to magnetic random access memory (“MRAM”) arrays, which employ giant magnetoresistive (“GMR”) cells, or magnetic tunnel junction (“MTJ”) cells, at the intersections of bitlines and wordlines, and also to magnetic sensors such as magnetic data storage devices having access elements used to access data on a magnetic data storage medium.

6707086, Mar 16, 2004

Jun 15, 2000

09/594638

Rajarao Jammy - Wappingers Falls NY
Philip L. Flaitz - Newburgh NY
Philip E. Batson - Katonah NY
Hua Shen - Beacon NY
Yun Yu Wang - Poughquah NY

Infineon Technologies AG - Munich
International Business Machines Corp. - Armonk NY

H01L 31119

257296, 257301, 257309

In accordance with the present invention, a method for forming a crystalline silicon nitride layer, includes the steps of providing a crystalline silicon substrate with an exposed surface, precleaning the exposed surface by employing a hydrogen prebake and exposing the exposed surface to nitrogen to form a crystalline silicon nitride layer. Also, a trench capacitor, in accordance with the present invention, includes a crystalline silicon substrate including deep trenches having surface substantially free of native oxide. A dielectric stack, including a crystalline silicon nitride layer, is formed on the sidewalls of the trenches. The dielectric stack forms a node dielectric between electrodes of the trench capacitor.

2002013, Sep 26, 2002

Jul 29, 1999

09/363523

RAJARAO JAMMY - WAPPINGERS FALLS NY, US
PHILIP L. FLAITZ - NEWBURGH NY, US
PHILIP E. BATSON - KATONAH NY, US
HUA SHEN - BEACON NY, US
YUN YU WANG - POUGHQUAG NY, US

H01L021/31, H01L021/469

438/791000, 438/762000, 438/775000

In accordance with the present invention, a method for forming a crystalline silicon nitride layer, includes the steps of providing a crystalline silicon substrate with an exposed surface, precleaning the exposed surface by employing a hydrogen prebake and exposing the exposed surface to nitrogen to form a crystalline silicon nitride layer. Also, a trench capacitor, in accordance with the present invention, includes a crystalline silicon substrate including deep trenches having surface substantially free of native oxide. A dielectric stack, including a crystalline silicon nitride layer, is formed on the sidewalls of the trenches. The dielectric stack forms a node dielectric between electrodes of the trench capacitor.