PETER DANIEL KIRCHNER
Pilots at Peekskill Holw Rd, Tompkins Corners, NY

License number
New York A4094511
Issued Date
Mar 2016
Expiration Date
Mar 2018
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
683 Peekskill Hollow Rd, Tompkins Corners, NY 10579

Professional information

Peter Kirchner Photo 1

Ltg Algaas Non-Linear Optical Material And Devices Fabricated Therefrom

US Patent:
5508829, Apr 16, 1996
Filed:
Jun 22, 1994
Appl. No.:
8/264177
Inventors:
John L. Freeouf - Katonah NY
Rodney T. Hodgson - Ossining NY
Peter D. Kirchner - Putnam Valley NY
Michael R. Melloch - West Lafayette IN
Jerry M. Woodall - Bedford NY
David D. Nolte - Lafayette IN
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G02F 1015, G02F 135, H01L 310232
US Classification:
359 3
Abstract:
A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As. In an optical storage medium embodiment of the invention the spatial variation in the intensity of the light beam results from a simultaneous application of a first light beam (LB1) and a second light beam (LB2) to the body, and from interference fringes resulting from an intersection of said first and second light beams.


Peter Kirchner Photo 2

Real-Time Rendering Of Embedded Transparent Geometry In Volumes On Commodity Graphics Processing Units

US Patent:
2006020, Sep 14, 2006
Filed:
Mar 14, 2005
Appl. No.:
11/079781
Inventors:
Peter Kirchner - Putnam Valley NY, US
Christopher Morris - Mount Vernon NY, US
International Classification:
G09G 5/00
US Classification:
345629000
Abstract:
A method for creating composite images of multiple objects using standard commodity graphics cards is provided that eliminates the need for expensive specialty graphics hardware for generating real-time renderings of the composite images. After the desired composite image and the objects contained in the composite image are identified, a volume rendered image of a first object is obtained. In addition, at least a first geometric representation and a second geometric representation of a second object based upon a desired composite image of the first and second objects are generated. These geometric representations are preferably polygonal representations. The volume rendered image and the geometric representations are used to create a plurality of composite image components. Each composite image component contains at least one of the volume rendered image, the first geometric representation and the second geometric representation. The composite image components are blended to create the desired composite image.


Peter Kirchner Photo 3

Schematic Guided Control Of The View Point Of A Graphics Processing And Display System

US Patent:
5764217, Jun 9, 1998
Filed:
Sep 10, 1996
Appl. No.:
8/716668
Inventors:
Paul Borrel - Peekskill NY
Peter Daniel Kirchner - Putnam Valley NY
James Sargent Lipscomb - Yorktown Heights NY
Jai Prakash Menon - Peekskill NY
Jaroslaw Roman Rossignac - Ossining NY
Robert Howard Wolfe - Yorktown Heights NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G09G 500, G06F 3033
US Classification:
345156
Abstract:
A graphics processing and display system includes a coordinate sensing system for determining position and orientation of a view point reference with respect to a schematic representation of at least one three-dimensional object; a view point controller for controlling a display view point according to the determined position and orientation of the view point reference with respect to the schematic representation; and a display processor for generating pixel data representing a two-dimensional rendering of the at least one three-dimensional object according to the graphics data and display view point, wherein the two-dimensional rendering is different from the schematic representation, and wherein the pixel data generated by the display processor is output for display on a display device. Advantageously, the system of the present invention is efficient and easier to use than prior art graphics processing and display systems because the user is provided the ability to control the display view point according to the position and orientation of the view point reference with respect to the schematic representation of the displayed object.


Peter Kirchner Photo 4

Strained Defect-Free Epitaxial Mismatched Heterostructures And Method Of Fabrication

US Patent:
5221367, Jun 22, 1993
Filed:
Aug 3, 1988
Appl. No.:
7/227955
Inventors:
Matthew F. Chisholm - Oak Ridge TN
Peter D. Kirchner - Putnam Valley NY
Alan C. Warren - Peekskill NY
Jerry M. Woodall - Bedford NY
Assignee:
International Business Machines, Corp. - Armonk NY
International Classification:
H01L 2120
US Classification:
148 33
Abstract:
Heterostructures having a large lattice mismatch between an upper epilayer and a substrate and a method of forming such structures having a thin intermediate layer are disclosed. The strain due to a lattice mismatch between the intermediate layer and the substrate is partially relieved by the formation of edge type dislocations which are localized and photoelectrically inactive. Growth of the intermediate layer is interrupted before it reaches the thickness at which the left over strain is relieved by 60 degree type threading dislocations. The upper epilayer is then grown in an unstrained and defect-free condition upon the intermediate layer where the unstrained lattice constant of the epilayer is about the same as the partially relieved strain lattice constant or the intermediate layer. An unstrained defect-free epilayer of InGaAs has been grown on a GaAs substrate with an intermediate layer 3-10 nm in thickness of InAs. Other large mismatch systems are disclosed, including, GaAs on Si with an intermediate layer of GaInAs.


Peter Kirchner Photo 5

Techniques For Grid Coupling Photovoltaic Cells Using Ratiometric Voltage Conversion

US Patent:
2013020, Aug 8, 2013
Filed:
Feb 3, 2012
Appl. No.:
13/365699
Inventors:
Peter Daniel Kirchner - Putnam Valley NY, US
Dennis G. Manzer - Bedford Hills NY, US
Yves C. Martin - Ossining NY, US
Thomas Picunko - Scarsdale NY, US
Robert L. Sandstrom - Chestnut Ridge NY, US
Theodore Gerard van Kessel - Millbrook NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H02J 1/00
US Classification:
307 77, 307 82
Abstract:
Techniques for electrical power transfer in photovoltaic systems are provided. In one aspect, a photovoltaic system includes an array of photovoltaic power producing elements (e.g., concentrator photovoltaic cells); a power receiving unit; and at least one ratiometric DC to DC converter connected to both the array of photovoltaic power producing elements and the power receiving unit. The array of photovoltaic power producing elements can include a plurality of the photovoltaic power producing elements connected in series or in parallel. In another aspect, a method of transferring electrical power from an array of photovoltaic power producing elements to a power receiving unit includes the following step. At least one ratiometric DC to DC converter is connected to both the array of photovoltaic power producing elements and the power receiving unit. The at least one ratiometric DC to DC converter is configured to alter a voltage output from the array.


Peter Kirchner Photo 6

Compound Semiconductor Surface Termination

US Patent:
4811077, Mar 7, 1989
Filed:
Jun 18, 1987
Appl. No.:
7/064414
Inventors:
Alan B. Fowler - Yorktown Heights NY
John L. Freeouf - Katonah NY
Peter D. Kirchner - Putnam Valley NY
Alan C. Warren - Peekskill NY
Jerry M. Woodall - Katonah NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 2934
US Classification:
357 52
Abstract:
A surface termination of a compound semiconductor is provided wherein conditions are provided for a pristine surface to be retained in an unpinned condition and a surface layer of a non-metallic material is provided. A GaAs substrate is heated in an oxygen-free atmosphere at high temperature with hydrogen sulfide, producing a pristine surface with a coating of gallium sulfide covered with a 1,000 nanometer covering of low temperature plasma enhanced chemical vapor deposited silicon dioxide.