PAUL NGUYEN
Physical Therapy at Capitol Expy, San Jose, CA

6714444, Mar 30, 2004

Aug 6, 2002

10/213537

Yiming Huai - Pleasanton CA
Paul P. Nguyen - San Jose CA

Grandis, Inc. - Milpitas CA

G11C 1114

365171, 365173, 365158

A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.

7646526, Jan 12, 2010

Sep 30, 2008

12/242897

Zhongchun Wang - Santa Rosa CA, US
Paul P. Nguyen - San Jose CA, US

Soladigm, Inc. - Milpitas CA

G02F 1/153, G02F 1/03, G09G 3/34

359275, 359254, 345105

One exemplary embodiment of an electrochromic thin-film material comprises an alloy of antimony and one or more base metals; and/or an alloy of antimony, one or more base metals, and lithium; and/or an alloy of antimony, one or more base metals, lithium, and one or more noble metals. Another exemplary embodiment of an electrochromic thin-film material comprises a multilayer stack, the multilayer stack comprising at least one layer comprising one of antimony, antimony-lithium alloy, antimony-one or more base metals alloy, antimony-one or more base metals-lithium alloy, antimony-one or more base metals-one or more noble metals alloy, and antimony-one or more base metals-one or more noble metals-lithium alloy; and at least one alternating layer comprising one of a base metal and a base-metal alloy. One or more of the base metals comprise Co, Mn, Ni, Fe, Zn, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Cd, Mg, Al, Ga, In, Sn, Pb, and Bi, and alloys thereof.

7106624, Sep 12, 2006

Apr 25, 2005

11/114946

Yiming Huai - Pleasanton CA, US
Paul P. Nguyen - San Jose CA, US

Grandis, Inc. - Milpitas CA

G11C 11/14

365171, 365173, 365158

A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction, due to spin transfer when a write current is passed through the magnetic element.

6888742, May 3, 2005

Aug 28, 2002

10/231430

Paul P. Nguyen - San Jose CA, US
Yiming Huai - Pleasanton CA, US

Grandis, Inc. - Milpitas CA

G11C011/00

365158, 365145, 365171

A method and system for providing a magnetic element capable of being written in a reduced time using the spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a ferromagnetic pinned layer, a nonmagnetic intermediate layer, and a ferromagnetic free layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic intermediate layer resides between the pinned layer and the free layer. The free layer has a magnetization with an easy axis in a second direction. The first direction is in the same plane as the second direction and is oriented at an angle with respect to the second direction. This angle is different from zero and π radians. The magnetic element is also configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.

7679810, Mar 16, 2010

Jun 30, 2008

12/165598

Eugene Anthony Fuss - Healdsburg CA, US
Roger W. Phillips - Santa Rosa CA, US
Paul P. Nguyen - San Jose CA, US

Soladigm, Inc. - Milpitas CA

G02F 1/153, C09K 19/02, G09G 3/38

359275, 349182, 345105

One exemplary embodiment of an electrochromic device comprises a tantalum-nitride ion-blocking layer formed between a transparent conductive layer and an electrochromic layer. Another exemplary embodiment of an electrochromic device comprises a tantalum-nitride ion-blocking layer formed between a transparent conductive layer and a counter electrode. Yet another exemplary embodiment of an electrochromic device comprises a type-2 ion-blocking layer formed on a transparent conductive layer as an ion diffusion barrier overlayer. Still another exemplary embodiment of an electrochromic device comprises a transparent conductive layer formed from tantalum nitride.

6185961, Feb 13, 2001

Jan 27, 1999

9/237927

Ronald J. Tonucci - Waldorf MD
Paul P. Nguyen - San Jose CA

The United States of America as represented by the Secretary of the Navy - Washington DC

C03C 1700

65 604

A nanopost glass array contains up to 10. sup. 12 /cm. sup. 2 of magnetizable nanoposts having diameter of 10-1000 nm that are straight and parallel to each other and are typically of a uniform diameter relative to each other and along the post length. The array is made using a reference electrode and a nanochannel glass template structure connected to each other electrically through an electrical source and both disposed in a plating solution. A magnetizable material is electroplated from the plating solution into the channels of the template structure.

7362543, Apr 22, 2008

Apr 18, 2005

11/108313

Richard Hsiao - San Jose CA, US
Quang Le - San Jose CA, US
Paul P. Nguyen - San Jose CA, US
Son Van Nguyen - Los Gatos CA, US
Mustafa Pinarbasi - Morgan Hill CA, US
Patrick R. Webb - San Jose CA, US
Howard G. Zolla - San Jose CA, US

International Business Machines Corporation - Armonk NY

G11B 5/17

360123

The present invention presents a method for fabricating coil elements for magnetic write heads. A coil pattern is formed on a substrate using photolithographic techniques. The substrate is etched using reactive ion etching, creating a coil-shaped trench in the substrate. Thin film seed layers are deposited using ion beam deposition. The substrate is electroplated with metal filling the trenches with metal. The substrate is chemical mechanical polished to remove excess metal and planarize the air bearing surface of the write head.

7313858, Jan 1, 2008

Mar 31, 2004

10/815429

Richard Hsiao - San Jose CA, US
Prakash Kasiraj - San Jose CA, US
Quang Le - San Jose CA, US
Paul Phong Nguyen - San Jose CA, US
Son Van Nguyen - Los Gatos CA, US
Denny D. Tang - Saratoga CA, US
Patrick Rush Webb - San Jose CA, US

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

G11B 5/17, G11B 5/187

2960323, 2960313, 2960325, 29852, 430315, 430324, 427 977, 427131, 427272

A Damascene process is provided for manufacturing a coil structure for a magnetic head. During the manufacturing process, an insulating layer is initially deposited after which a photoresist layer is deposited. A silicon dielectric layer is then deposited on the photoresist layer. After masking the silicon dielectric layer, at least one channel is etched in the photoresist layer and the silicon dielectric layer. Then, a conductive seed layer is deposited in the at least one channel. The at least one channel is then ready to be filled with a conductive material and chemically/mechanically polished to define a coil structure.

6901653, Jun 7, 2005

Apr 2, 2002

10/115414

Richard Hsiao - San Jose CA, US
Prakash Kasiraj - San Jose CA, US
Quang Le - San Jose CA, US
Paul Phong Nguyen - San Jose CA, US
Son Van Nguyen - Los Gatos CA, US
Denny D. Tang - Saratoga CA, US
Patrick Rush Webb - San Jose CA, US

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

G11B005/17

2960325, 2960323, 29606, 216 39, 216 47, 360123, 336200

A Damascene process is provided for manufacturing a coil structure for a magnetic head. During the manufacturing process, an insulating layer is initially deposited after which a photoresist layer is deposited. A silicon dielectric layer is then deposited on the photoresist layer. After masking the silicon dielectric layer, at least one channel is etched in the photoresist layer and the silicon dielectric layer. Then, a conductive seed layer is deposited in the at least one channel. The at least one channel is then ready to be filled with a conductive material and chemically/mechanically polished to define a coil structure.