PAUL NGUYEN, RPH
Pharmacy at 18 St, Antioch, CA

6829161, Dec 7, 2004

Jan 10, 2003

10/339962

Yiming Huai - Pleasanton CA
Frank Albert - Redwood City CA
Paul P. Nguyen - San Jose CA

Grandis, Inc. - Milpitas CA

G11C 1100

365158, 365171, 365173

A method and system for providing a magnetic element capable of being written using the spin-transfer effect and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a spin tunneling junction, a separation layer and a spin valve. In an alternate embodiment, the spin tunneling junction and/or spin valve may be dual. The separation layer is between a first free layer of the spin tunneling junction and a second free layer of the spin valve. The separation layer is configured so that the two free layers are magnetostatically coupled, preferably with their magnetizations antiparallel. In an alternate embodiment, having a dual spin valve and a dual spin tunneling junction, the separation layer may be omitted, and the appropriate distance provided using an antiferromagnetic layer. Another embodiment includes shaping the element such that the spin valve has a smaller lateral dimension than the spin tunneling junction.

6714444, Mar 30, 2004

Aug 6, 2002

10/213537

Yiming Huai - Pleasanton CA
Paul P. Nguyen - San Jose CA

Grandis, Inc. - Milpitas CA

G11C 1114

365171, 365173, 365158

A method and system for providing a magnetic element capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first ferromagnetic pinned layer, a nonmagnetic spacer layer, a ferromagnetic free layer, an insulating barrier layer and a second ferromagnetic pinned layer. The pinned layer has a magnetization pinned in a first direction. The nonmagnetic spacer layer is conductive and is between the first pinned layer and the free layer. The barrier layer resides between the free layer and the second pinned layer and is an insulator having a thickness allowing electron tunneling through the barrier layer. The second pinned layer has a magnetization pinned in a second direction. The magnetic element is configured to allow the magnetization of the free layer to change direction due to spin transfer when a write current is passed through the magnetic element.

7821087, Oct 26, 2010

Mar 13, 2007

11/685723

Paul Nguyen - San Jose CA, US
Yiming Huai - Pleasanton CA, US
Zhitao Diao - Fremont CA, US
Frank Albert - Redwood City CA, US

Grandis, Inc. - Milpitas CA

H01L 29/82

257421, 257422

A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

6838740, Jan 4, 2005

Sep 27, 2002

10/259129

Yiming Huai - Pleasanton CA, US
Paul P. Nguyen - San Jose CA, US

Grandis, Inc. - Milpitas CA

H01L 4300

257421, 257295, 257296, 257422

A method and system for providing a magnetic element capable of being written using spin-transfer effect while being thermally stable and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first, second and third pinned layers, first and second nonmagnetic layers, a free layer and a nonmagnetic spacer layers. The first, second and third pinned layers are ferromagnetic and have first, second and third magnetizations pinned in first, second and third directions. The first and second nonmagnetic layers include first and second diffusion barriers, respectively. The first and second nonmagnetic layers are between the first and second pinned layers and the second and third pinned layers, respectively. The first and second pinned layers and the second and third pinned layers are antiferromagnetically coupled. The nonmagnetic spacer layer is conductive and resides between the free layer and the third pinned layer.

7190611, Mar 13, 2007

Jan 7, 2003

10/338148

Paul P. Nguyen - San Jose CA, US
Yiming Huai - Pleasanton CA, US

Grandis, Inc. - Milpitas CA

G11C 11/00, H01L 43/00

365158, 365171, 257421, 257422

A magnetic element for a high-density memory array includes a resettable layer and a storage layer. The resettable layer has a magnetization that is set in a selected direction by at least one externally generated magnetic field. The storage layer has at least one magnetic easy axis and a magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element. An alternative embodiment of the magnetic element includes an additional multilayer structure formed from a tunneling barrier layer, a pinned magnetic layer and an antiferromagnetic layer that pins the magnetization of the pinned layer in a predetermined direction. Another alternative embodiment of the magnetic element includes an additional multilayer structure that is formed from a tunneling barrier layer and a second resettable layer having a magnetic moment that is different from the magnetic moment of the resettable layer of the basic embodiment.

7227773, Jun 5, 2007

Oct 21, 2005

11/256387

Paul P. Nguyen - San Jose CA, US
Yiming Huai - Pleasanton CA, US

Grandis, Inc. - Milpitas CA

G11C 11/00, G11C 7/00

365158, 365171, 365173, 257295

A magnetic element that can be used in a memory array having high density includes a pinned layer, a half-metallic material layer, a spacer (or a barrier) layer and a free layer. The half-metallic material layer is formed on the pinned layer and preferably has a thickness that is less than about 100 Å. The half-metallic material layer can be formed to be a continuous layer or a discontinuous on the pinned layer. The spacer (or barrier) layer is formed on the half-metallic material layer, such that the spacer (or barrier) layer is nonmagnetic and conductive (or insulating). The free layer is formed on the spacer (or barrier) layer and has a second magnetization that changes direction based on the spin-transfer effect when a write current passes through the magnetic element.

7821088, Oct 26, 2010

Jun 5, 2008

12/133671

Paul P. Nguyen - San Jose CA, US
Yiming Huai - Pleasanton CA, US

Grandis, Inc. - Milpitas CA

H01L 43/00, G11C 11/00

257421, 257295, 257422, 257425, 257E21665, 257E27005, 257E43002, 257E43004, 257E43005, 438 3, 438257, 365158, 365171, 365173

A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.

7808693, Oct 5, 2010

Dec 13, 2007

11/956238

Paul Nguyen - San Jose CA, US

Soladigm, Inc. - Milpitas CA

G02F 1/153

359270, 359273

An electrochromic device includes a first conductive layer, a single-layer or dual-layer ion conductor layer, and a second conductive layer. The layers are deposited using PVD, CVD, PECVD, atomic layer deposition, pulsed laser deposition, plating, or sol-gel techniques.

7362543, Apr 22, 2008

Apr 18, 2005

11/108313

Richard Hsiao - San Jose CA, US
Quang Le - San Jose CA, US
Paul P. Nguyen - San Jose CA, US
Son Van Nguyen - Los Gatos CA, US
Mustafa Pinarbasi - Morgan Hill CA, US
Patrick R. Webb - San Jose CA, US
Howard G. Zolla - San Jose CA, US

International Business Machines Corporation - Armonk NY

G11B 5/17

360123

The present invention presents a method for fabricating coil elements for magnetic write heads. A coil pattern is formed on a substrate using photolithographic techniques. The substrate is etched using reactive ion etching, creating a coil-shaped trench in the substrate. Thin film seed layers are deposited using ion beam deposition. The substrate is electroplated with metal filling the trenches with metal. The substrate is chemical mechanical polished to remove excess metal and planarize the air bearing surface of the write head.