PAUL DAVID JACKSON
Pilots at 55 St, Scottsdale, AZ

License number
Arizona A0925660
Issued Date
Sep 2015
Expiration Date
Sep 2017
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
17457 N 55Th St, Scottsdale, AZ 85254

Professional information

Paul Jackson Photo 1

Managing Partner, Integrus Capital

Position:
Founder, Managing Partner at Integrus Capital
Location:
Paradise Valley, Arizona
Industry:
Venture Capital & Private Equity
Work:
Integrus Capital - Paradise Valley, Arizona since Dec 2008 - Founder, Managing Partner Dynamic Labs Jan 1996 - Aug 2006 - Founder, President Orbital Sciences Corporation 1989 - 1992 - Project Engineer
Education:
Arizona State University, MBA 1994 - 1995
Course Credit, MBA
Arizona State University 1987 - 1990
BS, Aerospace Engineering
Interests:
Fractal analytics applied to theology, biblical history


Paul Jackson Photo 2

Paul Jackson - Scottsdale, AZ

Work:
Hooters
Cook
AT&T
Customer Care Agent
Afternoons - Normal, IL
Production Director/Asst
DiMaggio's Italian Ristorante - Carbondale, IL
Assistant Manager
Steak 'N' Shake - Carbondale, IL
Production Trainer
The Mentor Network - Carbondale, IL
Life Skills Therapist
La Gondola Spaghetti House - Normal, IL
Shift Supervisor
Education:
Southern Illinois University Carbondale - Carbondale, IL
B.A. in Radio-Television


Paul Jackson Photo 3

Structure And Method For Three Chamber Cmp Polishing Head

US Patent:
6068549, May 30, 2000
Filed:
Jul 28, 1999
Appl. No.:
9/363980
Inventors:
Paul Jackson - Paradise Valley AZ
Assignee:
Mitsubishi Materials Corporation - Tokyo
International Classification:
B24B 500, B24B 4702
US Classification:
451398
Abstract:
The invention provides a polishing machine and a three-chambered polishing head structure and method that improves the polishing uniformity of a substrate across the entire surface of the substrate, particularly near the edge of the substrate that is particularly beneficial to improve the uniformity of semiconductor wafers during Chemical Mechanical Polishing (CMP). In one aspect, the invention provides a method of controlling the polishing pressure over annular regions of the substrate, such as a wafer, in a semiconductor wafer polishing machine. The method includes controlling a first pressure exerted on the wafer against a polishing pad to affect the material removed from the wafer; controlling a second pressure exerted on a retaining ring, disposed concentric with the wafer, directly against the polishing pad, to affect the manner in which the polishing pad contacts the wafer at a peripheral edge of the wafer; and controlling a third pressure exerted within a predetermined annular region proximate an inner annular region of the retaining ring and an outer annular edge of the wafer to affect a change to the first and second pressure only proximate the annular region. Each of the first, second, and third pressures being independently controllable of the other pressures.


Paul Jackson Photo 4

Pneumatic Polishing Head For Cmp Apparatus

US Patent:
5643061, Jul 1, 1997
Filed:
Jul 20, 1995
Appl. No.:
8/504686
Inventors:
Paul David Jackson - Scottsdale AZ
Stephen Charles Schultz - Gilbert AZ
Assignee:
Integrated Process Equipment Corporation - Phoenix AZ
International Classification:
B24B 3704
US Classification:
451289
Abstract:
A polishing head for chemical-mechanical polishing apparatus includes a carrier plate having concentric, integral, cylindrical walls, an annular piston fitting within the outer of the cylindrical walls and a second piston fitting within the inner cylindrical wall and engaging the annular piston. Each piston defines a chamber with the carrier plate and the chambers are isolated from each other by a seal. Pneumatic fittings supply air or vacuum to each chamber. The second piston includes a cylindrical side wall and an integral bottom plate. The bottom plate is thicker in the center than at the side wall and the underside of the plate is covered with a wafer adhering layer. A retaining ring is attached to the lower edge of the annular piston. The retaining ring includes a peripheral groove for separating an outwardly extending flange from the main body of the ring. The underside of the ring includes one or more spiral grooves for circulating slurry about a wafer during polishing.


Paul Jackson Photo 5

Apparatus And Method For Polishing A Substrate

US Patent:
6241591, Jun 5, 2001
Filed:
Oct 15, 1999
Appl. No.:
9/418819
Inventors:
Paul D. Jackson - Paradise Valley AZ
E. Terry Lisi - Scottsdale AZ
Lee A. Reeves - Gilbert AZ
Assignee:
Prodeo Technologies, Inc. - Tempe AZ
International Classification:
B24B 500, B24B 2900
US Classification:
451287
Abstract:
In one embodiment, a polishing apparatus (10) includes a retaining ring (12), a pressure ring (16), a first seal (18), and a second seal (20). The retaining ring (12) is movably attached to the pressure ring (16) to create a uniform pressure distribution across the retaining ring (12). In addition a positive fluid pressure is applied to the first seal (18) and the second seal (20) to create the uniform pressure distribution across the retaining ring (12). The uniform pressure distribution across the retaining ring (16) allows a semiconductor substrate (51), polished with the polishing apparatus (10), to have a reduced edge exclusion, and thus increased die yield.


Paul Jackson Photo 6

Semiconductor Wafer Carrier And Method

US Patent:
5423558, Jun 13, 1995
Filed:
Mar 24, 1994
Appl. No.:
8/216848
Inventors:
Joe E. Koeth - Mesa AZ
Melvin J. Hoffman - Scottsdale AZ
Paul D. Jackson - Scottsdale AZ
Assignee:
IPEC/Westech Systems, Inc. - Phoenix AZ
International Classification:
B25D 1100
US Classification:
279 3
Abstract:
An improved semiconductor wafer carrier provides gimballing motion of the wafer to dynamically align the wafer to a polishing platen. This gimballing motion is achieved by providing a conical receptacle which has a spring friction fit with a spherical button. A torque plate with spring fingers provides the spring friction fit between the conical receptacle on the rotating shaft and the spherical button on the drive plate of the wafer carrier.


Paul Jackson Photo 7

Conditioner For A Polishing Pad And Method Therefor

US Patent:
5456627, Oct 10, 1995
Filed:
Dec 20, 1993
Appl. No.:
8/148906
Inventors:
Paul D. Jackson - Scottsdale AZ
Stephen C. Schultz - Gilbert AZ
James E. Sanford - Mesa AZ
Glen Ong - Tempe AZ
Richard B. Rice - Chandler AZ
Parag S. Modi - Phoenix AZ
John G. Baca - Tempe AZ
Assignee:
Westech Systems, Inc. - Phoenix AZ
International Classification:
B24B 4918, B24B 5302
US Classification:
451 11
Abstract:
An axially rotating circular polishing pad is conditioned by a rotating end effector that has an abrasion disc in contact with a polishing surface of the pad. The end effector moves along a radius of the polishing pad surface at a velocity that varies to compensate for locations on the polishing pad surface having linear velocities that are directly related to their respective radii. A desired contact force is maintained between the end effector and the polishing pad surface.


Paul Jackson Photo 8

Substrate Carrier Having A Streamlined Shape And Method For Thin Film Formation

US Patent:
5814561, Sep 29, 1998
Filed:
Feb 14, 1997
Appl. No.:
8/799871
Inventors:
Paul D. Jackson - Paradise Valley AZ
International Classification:
H01L 2144
US Classification:
438680
Abstract:
A structure for chemical vapor deposition processing includes a substrate carrier (10) having a streamlined shape. When placed in a mainstream flow (21), the substrate carrier (10) maintains a laminar boundary layer over a substrate (17) under high gas flow rate conditions. In a further embodiment, the substrate carrier (10) includes a device (27) for directly injecting a reactant gas stream (33) into the boundary layer.


Paul Jackson Photo 9

Substrate Carrier Having A Streamlined Shape And Method For Thin Film Formation

US Patent:
5944904, Aug 31, 1999
Filed:
Jun 10, 1998
Appl. No.:
9/095191
Inventors:
Paul D. Jackson - Paradise Valley AZ
International Classification:
C23C 1600
US Classification:
118728
Abstract:
A structure for chemical vapor deposition processing includes a substrate carrier (10) having a streamlined shape. When placed in a mainstream flow (21), the substrate carrier (10) maintains a laminar boundary layer over a substrate (17) under high gas flow rate conditions. In a further embodiment, the substrate carrier (10) includes a device (27) for directly injecting a reactant gas stream (33) into the boundary layer.