PAUL A MURPHY
Gas Fitter in Reading, MA

2011019, Aug 18, 2011

Mar 28, 2011

13/073437

Paul J. Murphy - Reading MA, US
Nicholas P.T. BATEMAN - Reading MA, US

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA

H01J 37/08

25049221

An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to maintain this alignment. This information can also be fed back to the ion implantation equipment to modify the implant parameters. These techniques can also be used in other ion implanter applications.

2006001, Jan 19, 2006

Apr 8, 2005

11/101832

David Suuronen - Newburyport MA, US
Paul Murphy - Reading MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01L 21/683

361234000

An apparatus is provided to improve clamping of a work piece to a support surface. The apparatus includes a support base, an insulator layer disposed on the support base, an electrode layer disposed on the insulator layer, and a clamping layer comprising aluminum oxynitride disposed on the electrode layer wherein the workpiece is clamped to the surface of the clamping layer. The apparatus provides a higher clamping force for the workpiece while reducing gas leakage and particle levels in addition to maintaining a declamping time suitable for high throughput processing. The apparatus may also include a support base, an insulator layer disposed on the support base, an electrode layer disposed on the insulator layer, and a clamping layer comprising a dielectric layer and a resilient material layer disposed on the electrode layer wherein the workpiece is clamped to the surface of the clamping layer. The apparatus and configurations of the dielectric and resilient layers further reduce backside particle generation while providing a high clamping force for the workpiece.

8467158, Jun 18, 2013

Jun 18, 2010

12/818454

Kasegn D. Tekletsadik - Middleton MA, US
Roger B. Fish - Bedford MA, US
Paul J. Murphy - Reading MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H02H 3/00

361 19, 361 62

A new type of superconducting fault current limiter is disclosed, which can advantageously be used with high voltage transmission networks. The circuit is electrically connected to two terminals, which connect to the transmission network. The superconducting circuit is located within an enclosure or tank, which is electrically isolated from ground. Therefore, the voltage difference between the enclosure and the superconducting circuit, and between the enclosure and the terminals are significantly less than exist in current deployments. In some embodiments, the enclosure is electrically connected to one of the terminals, while in other embodiments, the enclosure is electrically isolated from the terminals. The circuit can be combined with other like circuits to address a wide range of current transmission network configurations.

7202483, Apr 10, 2007

Apr 5, 2005

11/099119

Joseph C. Olson - Beverly MA, US
Eric D. Hermanson - Georgetown MA, US
Rosario Mollica - Wilmington MA, US
Paul J. Murphy - Reading MA, US

G01K 1/08, H01J 3/14

250397, 25049221

An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal having a first signal component representative of the first feature and a second signal component representative of the second feature. The first and second signal components and corresponding positions of the flag are representative of an angle of the ion beam in a direction orthogonal to the translation path. The sensing device may be a two-dimensional array of beam current sensors. The system may provide measurements of horizontal and vertical beam angles while translating the flag in only one direction.

2005022, Oct 13, 2005

Oct 1, 2004

10/956310

Stanley Stone - Gloucester MA, US
Paul Murphy - Reading MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

G06F019/00

700245000

A method and system to calibrate a handler robot can include determining positions for stations between which the robot will transfer payloads, performing a transfer of a payload by the robot between the stations, measuring an offset and angle of the payload from the determined position of the station to which it was transferred and updating the determined position of that station based on the measured offset and angle.

8329260, Dec 11, 2012

Jul 29, 2008

12/181516

Julian G. Blake - Gloucester MA, US
Paul J. Murphy - Reading MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

C23C 14/48, C23C 14/58, C23C 14/54, C23C 14/10

427526, 427527, 427529, 25049221, 25049222

A substrate is implanted with a species to form a layer of microbubbles in the substrate. The species may be hydrogen or helium in some embodiments. The size at which the microbubbles are stable within the substrate is controlled. In one example, this is by cooling the substrate. In one embodiment, the substrate is cooled to approximately between −150° C. and 30° C. This cooling also may reduce diffusion of the species in the substrate and will reduce surface roughness when the substrate is cleaved along the layer of microbubbles.

2011030, Dec 22, 2011

Jun 15, 2011

13/161068

Paul J. Murphy - Reading MA, US

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA

H05K 13/00

29825

Several embodiments of a novel technique for limiting transmission of fault current are disclosed. Current power distribution systems typically have an impedance, or reactor, on the output of the network equipment to limit current in the case of a fault condition. A low resistance switch, which changes its resistance in the presence of high current, is connected in parallel with this reactor. Thus, in normal operation, the current from the power generator bypasses the reactor, thereby minimizing power loss. However, in the presence of a fault, the resistance of the switch increases, forcing the current to pass through the reactor, thereby limiting the fault current.

7727866, Jun 1, 2010

Mar 4, 2009

12/397634

Nicholas Bateman - Burlington MA, US
Atul Gupta - Beverly MA, US
Paul Sullivan - Wenham MA, US
Paul Murphy - Reading MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01L 21/425

438514, 438 57, 438 73, 438455, 438458, 257617, 257E21568, 257E21346, 257E31032

The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.

7812325, Oct 12, 2010

Sep 28, 2006

11/536046

James Buonodono - Amesbury MA, US
Paul Murphy - Reading MA, US
Joseph C. Olson - Beverly MA, US
Anthony Renau - West Newbury MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 37/08, A61N 5/00

25049221, 2504922, 250396 R, 2504923

A system, method and program product for improving uniformity and angle control wafers being implanted. A system is provided that includes an end station for positioning a wafer being implanted, comprising: a platen for holding the wafer, wherein the platen is rotatable to provide wafer rotation; a housing for holding the platen, wherein the housing is rotatable about a first orthogonal axis to provide a first type of wafer tilt; a structure for supporting the housing, wherein the structure is rotatable about a second orthogonal axis to provide a second type of wafer tilt; and a control system which, during an implant process of the wafer, causes wafer rotation, the first type of wafer tilt, and the second type of wafer tilt.

2012023, Sep 20, 2012

Mar 12, 2012

13/417773

Mark R. Amato - Bedford MA, US
Paul J. Murphy - Reading MA, US
James D. Strassner - Austin TX, US

VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. - Gloucester MA

H02H 3/00

361 19

A SCFCL system includes a first SCFCL, a second SCFCL, and a controller configured to control at least one switch to couple the first SCFCL to a power line between an AC source and a load, and to electrically isolate the second SCFCL from the power line during a first operating mode when the first SCFCL is in service and the second SCFCL serves as a spare. During the first operating mode, the second SCFCL, may be maintained in a latent standby state or an immediate standby state. The second SCFCL may be automatically switched into service to provide for fault current protection in case the first SCFCL needs to be taken out of service for maintenance, repair, or replacement.