PATRICIA ROSE MORRIS
Nursing in Wilmington, DE

License number
Pennsylvania TLRN020982
Category
Nursing
Type
Registered Nurse Temporary Permit
Address
Address 2
Wilmington, DE 19806
Pennsylvania

Personal information

See more information about PATRICIA ROSE MORRIS at radaris.com
Name
Address
Phone
Patricia Morris
4614 N Palethorp St, Philadelphia, PA 19140
Patricia Morris
482 Nursery Dr S, Mechanicsburg, PA 17055
Patricia Morris
481 Stewart Dr, West Chester, PA 19380
Patricia Morris
424 Camberly Rd, Warminster, PA 18974
Patricia Morris
4244 Heathrow Ct APT C, Harrisburg, PA 17109

Professional information

Patricia Morris Photo 1

Process For Reducing The Damage Susceptibility In Optical Quality Crystals

US Patent:
5411723, May 2, 1995
Filed:
Sep 22, 1993
Appl. No.:
8/123662
Inventors:
Patricia A. Morris - Wilmington DE
Assignee:
E. I. Du Pont de Nemours and Company - Wilmington DE
International Classification:
C01B 2526, C01G 2802, C30B 3100
US Classification:
423306
Abstract:
A process is disclosed for treating a crystal of MTiOXO. sub. 4 which has crystal structure deficiencies of M and O, wherein M is selected from the group consisting of K, Rb, Tl and NH. sub. 4 and mixtures thereof and X is selected from the group consisting of P, As and mixtures thereof, which includes the step of heating said crystal in the presence of a mixture of MTiOXO. sub. 4 and at least one inorganic compound of one or more monovalent cations selected from the group consisting of Rb+, K+, Cs+ and Ti+ (said inorganic compound(s) being selected to provide a source of vapor phase monovalent cation and being present in an amount sufficient to provide at least a 0. 1 mole % excess of the monovalent cation in relation to the M in the MTiOXO. sub. 4 in said mixture) at a temperature of from about 400. degree. C. to 950. degree. C. and a pressure of at least 14 psi, and in the presence of a gaseous source of oxygen for a time sufficient to decrease the optical damage susceptibility of said crystal.


Patricia Morris Photo 2

Doped Crystalline Compositions And A Method For Preparation Thereof

US Patent:
5084206, Jan 28, 1992
Filed:
Feb 2, 1990
Appl. No.:
7/473771
Inventors:
Albert A. Ballman - Toms River NJ
John D. Bierlein - Wilmington DE
August Ferretti - Wilmington DE
Thurman E. Gier - Chadds Ford PA
Patricia A. Morris - Wilmington DE
Assignee:
E. I. Du Pont de Nemours and Company - Wilmington DE
International Classification:
C30B 2932
US Classification:
2523014F
Abstract:
A composition is disclosed which consists essentially of doped crystalline MTiOXO. sub. 4 (wherein M is selected from the group consisting of K, Rb and Tl, X is selected from the group consisting of P and As) which contain at least about 100 ppm total of at least one dopant selected from the group consisting of Ga, Al and Si. The compositions generally have low ionic conductivity, and may be prepared using an improved flux process wherein Ga, Al and/or Si dopant is added to the flux in a total amount of at least about 0. 5 mole % and the crystallization temperature is controlled to provide a crystalline composition containing the desired amount of dopant.