Inventors:
Michael W. Geis - Acton MA
Nikolay N. Efremow - Melrose MA
Stella W. Pang - Arlington MA
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
H01L 21306, C23F 102, B44C 122, C03C 1500
Abstract:
A new anisotropic dry etching system using a hot jet tube to heat and dissociate non-reactive source gas to form a directed flux of reactive specie or radicals for etching materials through openings in a resist or a reusable stencil of SiN. sub. x wherein x is in the range of 1. 5 to 0. 5. Si and GaAs may be etched using Cl. sub. 2, F. sub. 3, Br. sub. 2 or SF. sub. 6 source gasses. Pb or Hg, Cd, Te may be etched using n-butane, dimethyl ether or acetone as a source gas for CH. sub. 3 radicals. The tube may be formed of tungsten or where fluorine is used as a source gas, an irridium tube is preferred. Alternatively, a tube formed of rhenium or an alloy of rhenium and tungsten is preferred for some applications.