Inventors:
Hari M. Rao - San Diego CA, US
Jung Pill Kim - San Diego CA, US
Seung H. Kang - San Diego CA, US
Xiaochun Zhu - San Diego CA, US
Tae Hyun Kim - San Diego CA, US
Kangho Lee - San Diego CA, US
Xia Li - San Diego CA, US
Wah Nam Hsu - San Diego CA, US
Wuyang Hao - San Diego CA, US
Jungwon Suh - San Diego CA, US
Nicholas K. Yu - San Diego CA, US
Matthew Michael Nowak - San Diego CA, US
Steven M. Millendorf - San Diego CA, US
Asaf Ashkenazi - San Diego CA, US
Assignee:
QUALCOMM Incorporated - San Diego CA
International Classification:
G11C 11/14
Abstract:
A method of generating a non-reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device includes a bitcell having a first MTJ and a second MTJ and programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.