NATHANIEL WILLIAMS, CRNA
Nursing at New Bern Ave, Raleigh, NC

License number
North Carolina 196478
Category
Nursing
Type
Nurse Anesthetist, Certified Registered
Address
Address
3000 New Bern Ave, Raleigh, NC 27610
Phone
(919) 350-5645

Personal information

See more information about NATHANIEL WILLIAMS at radaris.com
Name
Address
Phone
Nathaniel Williams
5066 Cobblestone Rd, Winston Salem, NC 27106
Nathaniel Williams
506 Mystic Dr APT G, Greensboro, NC 27406
Nathaniel Williams
505 Ford St, New Bern, NC 28560
Nathaniel Williams
47 Jasmine Dr, Chocowinity, NC 27817
Nathaniel Williams
5406 Blue Springs Rd, Red Springs, NC 28377

Professional information

Nathaniel Williams Photo 1

Software Engineer

Position:
Senior Software Engineer at BlueStripe Software
Location:
Raleigh-Durham, North Carolina Area
Industry:
Computer Software
Work:
BlueStripe Software since Aug 2008 - Senior Software Engineer Privaris, Inc. Oct 2007 - Jun 2008 - Software Engineer
Education:
University of North Carolina at Chapel Hill 2002 - 2004
MS, Computer Science
University of Virginia 1998 - 2002
BA, Cognitive Science
Skills:
Software Development


Nathaniel Williams Photo 2

Nathaniel Williams - Raleigh, NC

Work:
Team Leader Williams & Williams House Restoration and Landscaping
Designer and Landscaping Manager
Urban Hope - Durham, NC
Volunteer Counselor
EDA Architecture - Morehead City, NC
Co-op Participant
Education:
North Carolina State University - Raleigh, NC
Bachelor of Science in Mathematics


Nathaniel Williams Photo 3

Nathaniel Williams, Raleigh NC - CRNA (Certified registered nurse anesthetist)

Specialties:
Nurse Anesthesiology
Address:
3000 New Bern Ave, Raleigh 27610
(919) 350-5645 (Phone)
Languages:
English
Hospitals:
3000 New Bern Ave, Raleigh 27610
Wakemed Raleigh
3000 New Bern Ave, Raleigh 27610


Nathaniel Williams Photo 4

Nathaniel Williams - Raleigh, NC

Work:
Lifetime Fitness Site Supervisor - Raleigh, NC
Education:
North Carolina Central University - Durham, NC
B.S. in Athletic Training


Nathaniel Williams Photo 5

Method For Making Group Iii Nitride Articles

US Patent:
8435879, May 7, 2013
Filed:
Nov 30, 2006
Appl. No.:
12/085857
Inventors:
Andrew D. Hanser - Raleigh NC, US
Lianghong Liu - Cary NC, US
Edward A. Preble - Raleigh NC, US
Denis Tsvetkov - Morrisville NC, US
Nathaniel Mark Williams - Raleigh NC, US
Xueping Xu - Stamford CT, US
Assignee:
Kyma Technologies, Inc. - Raleigh NC
International Classification:
H01L 21/28
US Classification:
438604, 257E21097
Abstract:
Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.


Nathaniel Williams Photo 6

Smoothing Method For Semiconductor Material And Wafers Produced By Same

US Patent:
8445386, May 21, 2013
Filed:
May 27, 2010
Appl. No.:
12/788592
Inventors:
Davis Andrew McClure - Raleigh NC, US
Nathaniel Mark Williams - Raleigh NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 21/311
US Classification:
438697, 257E2123
Abstract:
A smoothing method for semiconductor material and semiconductor wafers produced by the method are disclosed. Semiconductor wafers with reduced atomic steps, as well with reduced scratches and subsurface defects can be produced. Such wafers feature an improved growth surface that can provide for the growth of an epilayer with reduced macroscopic defects and defect densities. A method of smoothing the surface of a wafer according to example embodiments of the invention includes planarizing the surface of a semiconductor wafer, and then oxidizing the wafer to achieve a specified thickness of oxide on the surface of the wafer. The oxide can then be stripped from the surface of the semiconductor wafer.


Nathaniel Williams Photo 7

Smoothing Method For Semiconductor Material And Wafers Produced By Same

US Patent:
2013023, Sep 12, 2013
Filed:
Apr 23, 2013
Appl. No.:
13/868731
Inventors:
Nathaniel Mark Williams - Raleigh NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 29/34
US Classification:
257 77
Abstract:
A smoothing method for semiconductor material and semiconductor wafers produced by the method are disclosed. Semiconductor wafers with reduced atomic steps, as well with reduced scratches and subsurface defects can be produced. Such wafers feature an improved growth surface that can provide for the growth of an epilayer with reduced macroscopic defects and defect densities. A method of smoothing the surface of a wafer according to example embodiments of the invention includes planarizing the surface of a semiconductor wafer, and then oxidizing the wafer to achieve a specified thickness of oxide on the surface of the wafer. The oxide can then be stripped from the surface of the semiconductor wafer.