NATHAN ERIC BAXTER
Pilots at Jason St, Arlington, MA
License number
Massachusetts A5258985
Issued Date
Jul 2015
Expiration Date
Jul 2017
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
90 Jason St, Arlington, MA 02476
Personal information
See more information about NATHAN ERIC BAXTER at radaris.comName
Address
Phone
128 Ember Ln, Carlisle, MA 01741
90 Jason St, Arlington, MA 02476
49 Odell Ave, Beverly, MA 01915
438 Massachusetts Ave, Arlington, MA 02474
Professional information
See more information about NATHAN ERIC BAXTER at trustoria.com
Method For Modifying A Material Layer Using Gas Cluster Ion Beam Processing
Method For Modifying A Material Layer Using Gas Cluster Ion Beam Processing
US Patent:
7982196, Jul 19, 2011
Filed:
Mar 31, 2009
Appl. No.:
12/415755
Inventors:
John J. Hautala - Beverly MA, US
Nathan E. Baxter - Arlington MA, US
Nathan E. Baxter - Arlington MA, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01J 37/317
US Classification:
25049221, 2504922
Abstract:
A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0. 25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.
Method For Enhancing A Substrate Using Gas Cluster Ion Beam Processing
Method For Enhancing A Substrate Using Gas Cluster Ion Beam Processing
US Patent:
2010024, Sep 30, 2010
Filed:
Mar 31, 2009
Appl. No.:
12/415867
Inventors:
John J. Hautala - Beverly MA, US
Nathan E. Baxter - Arlington MA, US
Koji Yamashita - Burlington MA, US
Nathan E. Baxter - Arlington MA, US
Koji Yamashita - Burlington MA, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
A61N 5/00, H01J 27/00
US Classification:
2504923, 250424
Abstract:
A method of enhancing a material layer on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB), and treating a host region of the substrate by exposing the host region of the substrate to the GCIB. The treatment with the GCIB may selectively remove an undesirable specie and/or introduce a desirable specie to the host region.
Method For Modifying A Material Layer Using Gas Cluster Ion Beam Processing
Method For Modifying A Material Layer Using Gas Cluster Ion Beam Processing
US Patent:
8592784, Nov 26, 2013
Filed:
Jul 13, 2011
Appl. No.:
13/181910
Inventors:
John J. Hautala - Beverly MA, US
Nathan E. Baxter - Arlington MA, US
Nathan E. Baxter - Arlington MA, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01J 37/317
US Classification:
25049221, 2504922
Abstract:
A method of modifying a material layer on a substrate is described. The method comprises forming the material layer on the substrate. Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) having an energy per atom ratio ranging from about 0. 25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB.