MINH V LE
Broker in Methuen, MA

License number
Massachusetts 9066341
Issued Date
Jun 19, 2004
Expiration Date
Sep 5, 2006
Type
Salesperson
Address
Address
Methuen, MA 01844

Professional information

Minh Le Photo 1

System And Process For Actuation Voltage Discharge To Prevent Stiction Attachment In Mems Device

US Patent:
6707593, Mar 16, 2004
Filed:
May 8, 2001
Appl. No.:
09/850720
Inventors:
Minh Van Le - Methuen MA
Assignee:
Axsun Technologies, Inc. - Billerica MA
International Classification:
G02B 2600
US Classification:
359291, 359214, 359224, 359290
Abstract:
An electrostatically operated microelectromechanical system comprises a movable and a stationary structure, with a discharge system that is activated upon pull-in of the movable structure to discharge the voltage across an electrostatic cavity to thereby prevent stiction adhesion of the movable structure to the stationary structure. Specifically, a membrane release structure comprises a mirror optical element. The membrane is separated from a stationary support by an electrostatic cavity. The discharge switch comprises a membrane conductor pad on the membrane and a support conductor pad on the support that conducts a current upon activation of the discharge switch to discharge the electrostatic voltage. Preferably, these pads are metal.


Minh Le Photo 2

Integrated Tunable Fabry-Perot Filter And Method Of Making Same

US Patent:
6836366, Dec 28, 2004
Filed:
Aug 25, 2000
Appl. No.:
09/645200
Inventors:
Dale C. Flanders - Lexington MA
Peter S. Whitney - Lexington MA
Michael F. Miller - Hollis NH
Stanley R. Shanfield - West Newton MA
David B. West - Cambridge MA
Minh Van Le - Methuen MA
Assignee:
Axsun Technologies, Inc. - Billerica MA
International Classification:
G02B 528
US Classification:
359578, 359577, 359900, 356454
Abstract:
A tunable Fabry-Perot filter includes an optical cavity bounded by a stationary reflector and a deformable or movable membrane reflector. A second electrostatic cavity outside of the optical cavity includes a pair of electrodes, one of which is mechanically coupled to the movable membrane reflector. A voltage applied to the electrodes across the electrostatic cavity causes deflection of the membrane, thereby changing the length of the optical cavity and tuning the filter. The filter with the movable membrane can be formed by micro device photolithographic and fabrication processes from a semiconductor material in an integrated device structure. The membrane can include an inner movable membrane portion connected within an outer body portion by a pattern of tethers. The tether pattern can be such that straight or radial tethers connect the inner membrane with the outer body. Alternatively, a tether pattern with tethers arranged in a substantially spiral pattern can be used.


Minh Le Photo 3

Suspended High Reflectivity Coating On Release Structure And Fabrication Process Therefor

US Patent:
6808276, Oct 26, 2004
Filed:
May 8, 2001
Appl. No.:
09/851510
Inventors:
Walid A. Atia - Lexington MA
Minh Van Le - Methuen MA
Assignee:
Axsun Technologies, Inc. - Billerica MA
International Classification:
G02B 7182
US Classification:
359872, 216 24, 359224
Abstract:
In a MOEMS device and corresponding fabrication process, absorbing material along the optical axis of the device is removed. The result is a suspended optical coating, such as a dielectric thin film mirror stack. Such optical coatings can have very low absorption. Thus, the invention can materially lower the net absorption in the device, and thereby improve performance, by degrading power related dependencies.


Minh Le Photo 4

Process For Integrating Dielectric Optical Coatings Into Micro-Electromechanical Devices

US Patent:
6790698, Sep 14, 2004
Filed:
Sep 18, 2001
Appl. No.:
09/954861
Inventors:
Michael F. Miller - Hollis NH
Minh Van Le - Methuen MA
Christopher C. Cook - Bedford MA
Dale C. Flanders - Lexington MA
Steven F. Nagle - Cambridge MA
Assignee:
Axsun Technologies, Inc. - Billerica MA
International Classification:
H01L 2100
US Classification:
438 50
Abstract:
A process for patterning dielectric layers of the type typically found in optical coatings in the context of MEMS manufacturing is disclosed. A dielectric coating is deposited over a device layer, which has or will be released, and patterned using a mask layer. In one example, the coating is etched using the mask layer as a protection layer. In another example, a lift-off process is shown. The primary advantage of photolithographic patterning of the dielectric layers in optical MEMS devices is that higher levels of consistency can be achieved in fabrication, such as size, location, and residual material stress. Competing techniques such as shadow masking yield lower quality features and are difficult to align. Further, the minimum feature size that can be obtained with shadow masks is limited to ˜100 m, depending on the coating system geometry, and they require hard contact with the surface of the wafer, which can lead to damage and/or particulate contamination.


Minh Le Photo 5

Integrated Tunable Fabry-Perot Filter And Method Of Making Same

US Patent:
6525880, Feb 25, 2003
Filed:
Mar 1, 2001
Appl. No.:
09/797529
Inventors:
Dale C. Flanders - Lexington MA
Peter S. Whitney - Lexington MA
Minh Van Le - Methuen MA
Michael F. Miller - Hollis NH
Stanley R. Shanfield - Newton MA
Assignee:
Axsun Technologies, Inc. - Billerica MA
International Classification:
G02B 2700
US Classification:
359578, 359577, 359900, 216 24
Abstract:
A tunable Fabry-Perot filter includes an optical cavity bounded by a stationary reflector and a deformable or movable membrane reflector. A second electrostatic cavity outside of the optical cavity includes a pair of electrodes, one of which is mechanically coupled to the movable membrane reflector. A voltage applied to the electrodes across the electrostatic cavity causes deflection of the membrane, thereby changing the length of the optical cavity and tuning the filter. The filter with the movable membrane can be formed by micro device photolithographic and fabrication processes from a semiconductor material in an integrated device structure. The membrane can include an inner movable membrane portion connected within an outer body portion by a pattern of tethers. The tether pattern can be such that straight or radial tethers connect the inner membrane with the outer body. Alternatively, a tether pattern with tethers arranged in a substantially spiral pattern can be used.


Minh Le Photo 6

Optical Membrane Singulation Process Utilizing Backside And Frontside Protective Coating During Die Saw

US Patent:
6420206, Jul 16, 2002
Filed:
Jan 30, 2001
Appl. No.:
09/774216
Inventors:
Minh Van Le - Methuen MA
Assignee:
Axsun Technologies, Inc. - Billerica MA
International Classification:
H01L 2100
US Classification:
438 68, 216 2, 438465
Abstract:
A process for singulating MOEMS optical devices from a precursor structure, in which the precursor structure comprises device material, having movable optical structures, and handle material, through which optical ports are formed to provide for optical access to the movable optical structures. The process comprises coating a frontside and a backside of the precursor structure with protection material. The precursor structure is then attached to a substrate such as dicing tape and the precursor structure separated into individual optical devices by a process, including die sawing. Thereafter, the optical devices are removed from the tape and the protection material removed from the optical devices.


Minh Le Photo 7

Process For Integrating Dielectric Optical Coatings Into Micro-Electromechanical Devices

US Patent:
6271052, Aug 7, 2001
Filed:
Oct 19, 2000
Appl. No.:
9/692639
Inventors:
Michael F. Miller - Hollis NH
Minh Van Le - Methuen MA
Christopher C. Cook - Bedford MA
Dale C. Flanders - Lexington MA
Assignee:
Axsun Technologies, Inc. - Billerica MA
International Classification:
H01L 2100
US Classification:
438 50
Abstract:
A process for fabricating an optical membrane from polycrystalline silicon comprises first forming a sacrificial layer on a handle wafer. Concavities are etched into the sacrificial layer. Polycrystalline silicon membrane layer is then formed on the sacrificial layer. The polycrystalline membrane layer is subsequently polished to achieve the predetermined membrane thickness and surface smoothness, annealed, and then patterned. Finally, the sacrificial layer is removed to release the membrane. The concavities in the sacrificial layer yield convexities in the polysilicon layer to prevent stiction adhesion to the handle wafer. During processing, a mask used to pattern the membrane layer functions to protect an highly reflecting (HR) coating for the membrane.


Minh Le Photo 8

Stray Light Insensitive Detector System And Amplifier

US Patent:
7450862, Nov 11, 2008
Filed:
Mar 19, 2003
Appl. No.:
10/392353
Inventors:
Dale C. Flanders - Lexington MA, US
Walid Atia - Lexington MA, US
Eric E. Fitch - Medford MA, US
Minh Van Le - Methuen MA, US
Randal A. Murdza - North Andover MA, US
Robert L. Payer - Pepperell MA, US
Jeffrey A. Korn - Lexington MA, US
Xiaomei Wang - Winchester MA, US
Walter R. Buchwald - Hampstead NH, US
Assignee:
Axsun Technologies, Inc. - Billerica MA
International Classification:
H04B 10/06
US Classification:
398202, 398212
Abstract:
A detector system for a fiber optic component is insensitive to stray light. Specifically, the invention comprises a detector chip, which converts received light into an electric signal. A baffle substrate is positioned over the detector chip. This baffle substrate has a transmission port through which an optical signal is transmitted to the detector chip. As a result, light that is not directed to be transmitted through the port is blocked by the baffle substrate. In this way, it rejects stray light that may be present in the hermetic package. A detector substrate is provided on which the detector chip is mounted. This detector substrate preferably comprises electrical traces to which the detector chip is electrically connected. The detector substrate can further comprise bond pads for wire bonding to make electrical connections to the electrical traces.