MR. MINH LE, PHARM D
Pharmacy at Aetna Way, San Jose, CA

License number
California 47273
Category
Pharmacy
Type
Pharmacist
Address
Address
2978 Aetna Way, San Jose, CA 95121
Phone
(408) 410-5314

Personal information

See more information about MINH LE at radaris.com
Name
Address
Phone
Minh Le
4988 Collomia Ct, San Jose, CA 95111
Minh Le
5091 Auburn Dr, San Diego, CA 92105
Minh Le
515 E Vermont Ave APT A, Anaheim, CA 92805
Minh Le
521 Mota Dr, Bay Point, CA 94565
Minh Le, age 40
5123 Peck Rd, El Monte, CA 91732
(626) 542-3052

Organization information

See more information about MINH LE at bizstanding.com

Minh Le

2600 Senter Rd, San Jose, CA 95111

Industry:
Nonclassifiable Establishments


VIENNA HEALTH&BEAUTY "QUALITY MEETS AFFORDABILITY" BY MINH LE, M.D.

San Jose, CA

qh(item.name)
Registration:
Aug 20, 2009
State ID:
77809050
Reg. number:
3914954
Status:
700 - REGISTERED
Status date:
Feb 1, 2011
Illustration:
3000
Employee:
William H Dawe Iii
Goods & Services:
Color is not claimed as a feature of the mark., "HEALTH & BEAUTY", The mark consists of a circular design with a leaf at the top. Inside the circle it reads "VIENNA HEALTH&BEAUTY". Underneath the leaf...
Owner:
25 N 14 St #700, San Jose, CA 95112

Professional information

See more information about MINH LE at trustoria.com
Minh Le Photo 1
Software Quality Engineer At Wyse Technology

Software Quality Engineer At Wyse Technology

Position:
Software Quality Engineer at Wyse Technology
Location:
San Jose, California
Industry:
Computer Software
Work:
Wyse Technology - San Jose, CA since Nov 2012 - Software Quality Engineer Amazon Lab126 - Cupertino, CA Mar 2012 - Dec 2012 - Software Quality Engineer Smith Micro Software Apr 2010 - Feb 2012 - Software Quality Engineer Adobe Systems - San Francisco Bay Area Aug 2009 - Apr 2010 - Software Quality Engineer Coremobility Inc. Jan 2006 - Aug 2009 - Software Quality Engineer
Education:
CSU Eastbay 2004 - 2006
Evergreen Valley College 2001 - 2003


Minh Le Photo 2
Minh Le - San Jose, CA

Minh Le - San Jose, CA

Work:
CTS Electronics Corp
PC/electronic tester
QUANTA Computer USA
Laptop and Desktop Computer Technician
AT&T
Second Tier DSL Helpdesk Technical support
Education:
San Jose/Evergreen Valley College
AA in Business Administrative & Management


Minh Le Photo 3
Minh Le - San Jose, CA

Minh Le - San Jose, CA

Work:
Hollyja Salon - San Mateo, CA
Cosmetologist
Education:
Heald College - Milpitas, CA
Associate in Applied Science in Medical Assisting


Minh Nhat Vu Le Photo 4
Minh Nhat Vu Le, San Jose CA

Minh Nhat Vu Le, San Jose CA

Specialties:
Optometrist
Address:
1652 E Capitol Expy, San Jose, CA 95121


Minh Le Photo 5
Minh Le, San Jose CA

Minh Le, San Jose CA

Specialties:
Internist
Address:
25 N 14Th St, San Jose, CA 95112


Minh Le Photo 6
Method Of Making Coated Article Including Anti-Reflection Coating With Double Coating Layers Including Mesoporous Materials, And Products Containing The Same

Method Of Making Coated Article Including Anti-Reflection Coating With Double Coating Layers Including Mesoporous Materials, And Products Containing The Same

US Patent:
2013019, Aug 1, 2013
Filed:
Dec 13, 2012
Appl. No.:
13/713811
Inventors:
Richard BLACKER - Farmington HIlls MI, US
Mark A. LEWIS - Ypsilanti MI, US
Nikhil KALYANKAR - Mountain View CA, US
Minh Huu LE - San Jose CA, US
Assignee:
GUARDIAN INDUSTRIES CORP. - Auburn Hills MI
International Classification:
C03C 17/22, G02B 1/11
US Classification:
359586, 427162, 977773
Abstract:
Certain examples relate to a method of making an antireflective (AR) coating supported by a glass substrate. The anti-reflection coating may include porous metal oxide(s) and/or silica, and may be produced using a sol-gel process. The pores may be formed and/or tuned in each layer respectively in such a manner that the coating ultimately may comprise a porous matrix, graded with respect to porosity. The gradient in porosity may be achieved by forming first and second layers using one or more of (a) nanoparticles of different shapes and/or sizes, (b) porous nanoparticles having varying pore sizes, and/or (c) compounds/materials of various types, sizes, and shapes that may ultimately be removed from the coating post-deposition (e.g., carbon structures, micelles, etc., removed through combustion, calcination, ozonolysis, solvent-extraction, etc.), leaving spaces where the removed materials were previously located.


Minh Le Photo 7
Heat Stable Snal And Snmg Based Dielectrics

Heat Stable Snal And Snmg Based Dielectrics

US Patent:
2013018, Jul 25, 2013
Filed:
Mar 12, 2013
Appl. No.:
13/797606
Inventors:
Richard Blacker - Farmington Hills MI, US
Guowen Ding - San Jose CA, US
Muhammad Imran - Brownstown MI, US
Jingyu Lao - Saline MI, US
Minh Huu Le - San Jose CA, US
Yiwei Lu - Ann Harbor MI, US
Assignee:
INTERMOLECULAR INC. - San Jose CA
International Classification:
H01B 3/10
US Classification:
428432, 428697, 428471, 4284722, 423600, 4235949, 10628719, 10628717
Abstract:
A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.


Minh Le Photo 8
Method And System For Optical Calibration

Method And System For Optical Calibration

US Patent:
8619528, Dec 31, 2013
Filed:
Aug 31, 2011
Appl. No.:
13/223199
Inventors:
Hamid Ghazvini - San Jose CA, US
David Kuo - Palo Alto CA, US
Minh Huong Le - San Jose CA, US
Kim Yang Lee - Fremont CA, US
HongYing Wang - Fremont CA, US
Nobuo Kurataka - Campbell CA, US
Yautzong Hsu - Fremont CA, US
Henry Hung Yang - San Jose CA, US
Assignee:
Seagate Technology LLC - Cupertino CA
International Classification:
G11B 20/00
US Classification:
369 531, 369 4426, 3562373, 264293
Abstract:
A system and method of calibrating optical measuring equipment includes optically measuring discrete objects of a first known predictable pattern from a calibration apparatus, wherein the first known predictable pattern is a bit pattern. A recording surface optical reader is calibrated based on the optically measuring. Using the first known predictable pattern, contamination is filtered from the results of the optically measuring.


Minh Le Photo 9
Nitrogen Reactive Sputtering Of Cu-In-Ga-N For Solar Cells

Nitrogen Reactive Sputtering Of Cu-In-Ga-N For Solar Cells

US Patent:
2013012, May 16, 2013
Filed:
Jan 10, 2013
Appl. No.:
13/738931
Inventors:
Minh Huu Le - San Jose CA, US
Guizhen Zhang - Santa Clara CA, US
Assignee:
Intermolecular, Inc. - San Jose CA
International Classification:
H01L 31/032
US Classification:
438 95
Abstract:
Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.


Minh Le Photo 10
Nitrogen Reactive Sputtering Of Cu-In-Ga-N For Solar Cells

Nitrogen Reactive Sputtering Of Cu-In-Ga-N For Solar Cells

US Patent:
8394659, Mar 12, 2013
Filed:
Sep 21, 2012
Appl. No.:
13/624406
Inventors:
Guowen Ding - San Jose CA, US
Minh Huu Le - San Jose CA, US
Guizhen Zhang - Santa Clara CA, US
Assignee:
Intermolecular, Inc. - San Jose CA
International Classification:
H01L 21/00
US Classification:
438 57, 136244, 136252, 136262, 136265, 257E21068, 438 93, 438 95
Abstract:
Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.