MING LI, D.C.
Acupuncture at Stevens Creek Blvd, Cupertino, CA

6833161, Dec 21, 2004

Feb 26, 2002

10/084767

Shulin Wang - Campbell CA
Ulrich Kroemer - Jena, DE
Lee Luo - Fremont CA
Aihua Chen - San Jose CA
Ming Li - Cupertino CA

Applied Materials, Inc. - Santa Clara CA

C23C 1614

427250, 427253, 427255392, 427255394, 4272557

A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.

2013006, Mar 14, 2013

Sep 9, 2011

13/229197

Yang Yu - San Ramon CA, US
Delei Yu - Beijing, CN
Jianwei Guo - Beijing, CN
Robert Tao - San Jose CA, US
Ming Li - Cupertino CA, US

FUTUREWEI TECHNOLOGIES, INC. - Plano TX

H04L 12/56, H04L 12/26

370235, 370389

An apparatus comprising a network node coupled to an internal network comprising a plurality of internal nodes and configured to forward a packet designated to the internal network based on service reachability information that indicates at least one of the internal nodes for forwarding the packet to, wherein the service reachability information is sent and updated in a dynamic manner by the internal network. Also included is a network apparatus implemented method comprising receiving service reachability information from an internal network, maintaining the service reachability information in an interior Forwarding Information Base (iFIB), receiving a packet with a public destination address associated with the internal network; and forwarding the packet to appropriate locations in the internal network using the service reachability information in the iFIB.

2012032, Dec 20, 2012

Mar 1, 2010

13/581281

Jean-Paul Noel - Ottawa, CA
Ming Li - Cupertino CA, US

GROUP IV SEMICONDUCTOR INC. - Kanata ON

H01L 33/44

438 29, 257 98, 257E33061

A method is disclosed for deposition of thin film dielectrics, and in particular for chemical vapour deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynitride and/or other silicon compatible dielectrics. The method comprises post-deposition surface treatment of deposited layers with a metal or semiconductor source gas, e.g. a silicon source gas. Deposition of silicon containing dielectrics preferably comprises silane-based chemistry for deposition of doped or undoped dielectric layers, and surface treatment of deposited dielectric layers with silane. Surface treatment provides dielectric layers with improved layer-to-layer uniformity and lateral continuity, and substantially atomically flat dielectric layers suitable for multilayer structures for electroluminescent light emitting structures, e.g. active layers containing rare earth containing luminescent centres. Doped or undoped dielectric thin films or nano-layer dielectric structures may also be provided for other semiconductor devices.

2012020, Aug 16, 2012

Apr 5, 2011

13/080194

Randall Stewart - Chapin SC, US
Renwei Li - Fremont CA, US
Xuesong Dong - Pleasonton CA, US
Hongtao Yin - Fremont CA, US
Huaimo Chen - Bolton MA, US
Robert Tao - San Jose CA, US
Yang Yu - San Ramon CA, US
Weiqian Dai - San Jose CA, US
Ming Li - Cupertino CA, US

FUTUREWEI TECHNOLOGIES, INC. - Plano TX

G06F 15/173

709224

An apparatus comprising a processor configured to migrate load from a source process running on the processor to a target process running on a peer processor in a dynamic manner by monitoring an amount of resources used by the source process, wherein the load is migrated when the amount of resources utilized by the source process exceeds a threshold. Also disclosed is a network component comprising a first processor configured to select a source process to migrate a load from the first processor based on available resources on the first processor and the source process; and a second processor configured upon receiving a migration request from the first processor to one of select and start a target process to which to migrate the load based on available resources for the second processor and the target process.

7429516, Sep 30, 2008

Sep 15, 2006

11/532114

Shulin Wang - Campbell CA, US
Ulrich Kroemer - Jena, DE
Lee Luo - Fremont CA, US
Aihua Chen - San Jose CA, US
Ming Li - Cupertino CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/336

438287, 438592, 438643

In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e. g. , diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.

2012013, May 31, 2012

Apr 5, 2011

13/080248

Randall Stewart - Chapin SC, US
Renwei Li - Fremont CA, US
Xuesong Dong - Pleasonton CA, US
Hongtao Yin - Fremont CA, US
Huaimo Chen - Bolton MA, US
Robert Tao - San Jose CA, US
Yang Yu - San Ramon CA, US
Weiqian Dai - San Jose CA, US
Ming Li - Cupertino CA, US

FUTUREWEI TECHNOLOGIES, INC. - Plano TX

G06F 15/16

709230

An apparatus comprising a processor configured to startup a new process on a peer processor to off-load a load of a local process on the processor in a dynamic manner based on monitoring an amount of resources used by the processor, wherein the startup of the new process on the peer processor is initiated when the amount of resources used by the local process reaches a threshold.

2008024, Oct 9, 2008

Apr 5, 2007

11/696947

Ming Li - Cupertino CA, US
Yi Ma - Santa Clara CA, US
R. Suryanarayanan Iyer - Edina MN, US

H01L 29/78, H01L 21/4763

257412, 438585, 257E29255, 257E21495

A method for forming a poly-crystalline silicon film on a substrate by positioning a substrate within a processing chamber, heating the processing chamber to a first temperature between about 640° C. and about 720° C., stabilizing a deposition pressure between about 200 Torr and about 350 Torr, introducing a silicon precursor into the processing chamber to deposit a silicon film comprising an amorphous or hemisphere grain film, and heating the processing chamber to a second temperature between about 700° C. and about 750 C.° to anneal the amorphous or hemisphere grain film into a poly-crystalline nano-crystalline grain film.