MINESH D PATEL
Medical Practice at Michael Tiago Cir, Maitland, FL

6605529, Aug 12, 2003

May 11, 2001

09/853317

Sundar Chetlur - Singapore, SG
Jennifer M. McKinley - Orlando FL
Minesh A. Patel - Orlando FL
Pradip K. Roy - Orlando FL
Jonathan Zhong-Ning Zhou - Orlando FL

Agere Systems Inc. - Allentown PA

H01L 214763

438627, 438585, 438643, 438795

The present invention provides a method of manufacturing a semiconductor device that includes incorporation of a hydrogen isotope at a relatively high processing temperature during gate oxidation or polysilicon gate electrode deposition to maximize incorporation of hydrogen isotope at interfaces deliberately created during oxidation (such as graded oxidation) as multilayered poly/alpha-silicon deposition process.

6391668, May 21, 2002

May 1, 2000

09/562346

Carlos M. Chacon - Orlando FL
Sundar S. Chetlur - Orlando FL
Brian E. Harding - Orlando FL
Minesh A. Patel - Orlando FL
Pradip K. Roy - Orlando FL

Agere Systems Guardian Corp. - Orlando FL

H01L 2166

438 17, 438197, 324769

The present invention provides a method of determining a trap density of a semiconductor substrate/dielectric interface. In one embodiment, the method comprises measuring a current within a semiconductor substrate resulting from a flow of carriers from traps located near the interface, wherein the measured current is a function of the number of traps located at the interface, and determining the trap density as a function of the measured current.

6576522, Jun 10, 2003

Dec 8, 2000

09/733570

Sundar Srinivasan Chetlur - Singapore, SG
Pradip Kumar Roy - Orlando FL
Minesh Amrat Patel - Orlando FL
Sidhartha Sen - Singapore, SG
Vivek Saxena - Orlando FL

Agere Systems Inc. - Allentown PA

H01L 21336

438359, 438660, 438795

A method for deuterium sintering to improve the hot carrier aging of an integrated circuit includes (a) providing a partially fabricated integrated circuit structure comprising a semiconductor substrate and a dielectric layer formed on at least a portion of the substrate, the dielectric layer having at least one conductive material via plug formed therein and (b) sintering the structure in the presence of a gas comprising deuterium-containing components at high temperatures prior to a metallization layer being deposited on the structure.

6940151, Sep 6, 2005

Sep 30, 2002

10/261463

Michael Scott Carroll - Orlando FL, US
Yi Ma - Santa Clara CA, US
Minesh Amrat Patel - Orlando FL, US
Peyman Sana - Orlando FL, US

Agere Systems, Inc. - Allentown PA

H01L031/0392

257649, 257636, 257630, 257640

A low-thermal budget, silicon-rich silicon nitride film may include a concentration of hydrogen in Si—H bonds being at least 1. 5 times as great as a concentration of hydrogen in N—H bonds. The silicon nitride film suppresses boron diffusion in boron-doped devices when such devices are processed using high-temperature processing operations that conventionally urge boron diffusion. The low-thermal budget, silicon-rich silicon nitride film may be used to form spacers in CMOS devices, it may be used as part of a dielectric stack to prevent shorting in tightly packed SRAM arrays, and it may be used in BiCMOS processing to form a base nitride layer and/or nitride spacers isolating the base from the emitter. Furthermore the low-thermal budget, silicon-rich silicon nitride film may remain covering the CMOS structure while bipolar devices are being formed, as it suppresses the boron diffusion that results in boron penetration and boron-doped poly depletion.

2003009, May 15, 2003

Nov 15, 2001

09/999285

Siddhartha Bhowmik - Allentown PA, US
Sailesh Merchant - Orlando FL, US
Minesh Patel - Orlando FL, US
Darrell Simpson - Gotha FL, US

B32B009/00, B05D003/04, C23C016/00, B05D003/02

428/698000, 428/336000, 428/469000, 428/472000, 427/376100, 427/248100, 427/378000

A liner and method of forming a liner for a tungsten plug in a semiconductor device which reduces cost and improves reliability. In one aspect, it has been discovered that by depositing an initial film of titanium using any conventional process such as CVD, PVD or IMP (ion metal plasma) and then heating the device in a nitrogen atmosphere to a temperature of about 450 degrees C., a thin protective layer of titanium nitride can be form on the surface of the initial film. The protective layer has been found to be uniform in density and avoids the irregularities occurring in deposited titanium nitride. The thickness of the TiN layer can be controlled by controlling the time duration of the annealing process and by controlling the pressure of the nitrogen in the annealing tool. Using this two step method, the integrity of the titanium nitride layer is preserved and the formation of volcanoes is avoided.