DR. MIKE M CHEN, DMD
Dentist at Blossom Hill Rd, San Jose, CA
License number
California 39615
Category
Dentist
Type
Dentist
Address
Address
393 Blossom Hill Rd STE 150, San Jose, CA 95123
Phone
(408) 629-6704
(408) 629-9976 (Fax)
(408) 629-9976 (Fax)
Organization information
See more information about MIKE M CHEN at bizstanding.comDamian H Chang Inc - Mike M Chen DDS
6110 Hellyer Ave #125, San Jose, CA 95138
Categories:
Clinics & Medical Centers, Dentists
Phone:
(408) 629-6704 (Phone)
Professional information
Mike M Chen, San Jose CA
Specialties:
Dentist
Address:
1711 Hamilton Ave, San Jose, CA 95125
6110 Hellyer Ave, San Jose, CA 95138
6110 Hellyer Ave, San Jose, CA 95138
Approach To Provide High External Voltage For Flash Memory Erase
US Patent:
6240027, May 29, 2001
Filed:
Oct 23, 2000
Appl. No.:
9/693503
Inventors:
Peter Wung Lee - Saratoga CA
Fu-Chang Hsu - Saratoga CA
Mike Hsinyih Chen - San Jose CA
Fu-Chang Hsu - Saratoga CA
Mike Hsinyih Chen - San Jose CA
Assignee:
Aplus Flash Technology, Inc. - Santa Clara CA
International Classification:
G11C 700, H03K 190175
US Classification:
36518911
Abstract:
In this invention external high voltages are connected to a chip containing a flash memory that are connected to selected cells to be erased. Internal pump circuits contained on the chip are turned off while the external voltages are used. The external voltages, a high negative voltage and a high positive voltage, are connected to gates and sources respectively of selected cells to be erased by a voltage control module. The external voltages are used during manufacture during program/erase operations to perform the erase function efficiently. The internal high voltage pump circuits are used to erase flash memory cells after being assembled on a circuit board by a user. Two level shifter circuits are disclosed that form a part of the voltage control module. The level shifter circuits apply voltages to the flash memory cells and provide voltages that select and deselect the cells for erasure.
Approach To Provide High External Voltage For Flash Memory Erase
US Patent:
6166961, Dec 26, 2000
Filed:
Aug 19, 1999
Appl. No.:
9/377545
Inventors:
Peter Wung Lee - Saratoga CA
Fu-Chang Hsu - Saratoga CA
Mike Hsinyih Chen - San Jose CA
Fu-Chang Hsu - Saratoga CA
Mike Hsinyih Chen - San Jose CA
Assignee:
Aplus Flash Technology, Inc. - Santa Clara CA
International Classification:
G11C 1604
US Classification:
36518529
Abstract:
In this invention external high voltages are connected to a chip containing a flash memory that are connected to selected cells to be erased. Internal pump circuits contained on the chip are turned off while the external voltages are used. The external voltages, a high negative voltage and a high positive voltage, are connected to gates and sources respectively of selected cells to be erased by a voltage control module. The external voltages are used during manufacture during program/erase operations to perform the erase function efficiently. The internal high voltage pump circuits are used to erase flash memory cells after being assembled on a circuit board by a user. Two level shifter circuits are disclosed that form a part of the voltage control module. The level shifter circuits apply voltages to the flash memory cells and provide voltages that select and deselect the cells for erasure.
Dr. Mike M Chen, San Jose CA - DMD (Doctor of Dental Medicine)
Specialties:
Dentistry
Address:
393 Blossom Hill Rd STE 150, San Jose 95123
(408) 629-6704 (Phone), (408) 629-9976 (Fax)
(408) 629-6704 (Phone), (408) 629-9976 (Fax)
Languages:
English